| Patent application number | Description | Published |
|---|
| 20090032873 | Ultra thin single crystalline semiconductor TFT and process for making same - Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer. | 02-05-2009 |
| 20090195511 | Touch sensitive display employing an SOI substrate and integrated sensing circuitry - Methods and apparatus for producing a touch sensitive LCD employing a semiconductor on glass (SiOG) structure provide for: a glass or glass-ceramic substrate; a single crystal semiconductor layer bonded to the glass or glass-ceramic substrate; display circuitry including a plurality of thin-film transistors disposed on the single crystal semiconductor layer and forming a matrix of display pixels; display control circuitry operable to drive the display circuitry to produce viewable images; and sensing circuitry operable to detect electrical characteristic changes in one or more of the single crystal semiconductor layer and the display circuitry, the electrical characteristic changes resulting from user touch events. | 08-06-2009 |
| 20090294853 | THIN FILM TRANSISTOR HAVING A COMMON CHANNEL AND SELECTABLE DOPING CONFIGURATION - Methods and apparatus for producing a thin film transistor (TFT) result in: a semiconductor layer; a channel region formed on or in the semiconductor layer and having first and second opposing ends, and having third and fourth opposing ends transverse to the first and second ends; an n-type source structure disposed on or in the semiconductor layer adjacent to the first end of the channel; an n-type drain structure disposed on or in the semiconductor layer adjacent to the second end of the channel; a p-type source structure disposed on or in the semiconductor layer adjacent to the third end of the channel; a p-type drain structure disposed on or in the semiconductor layer adjacent to the fourth end of the channel; and a gate structure disposed over the channel region. | 12-03-2009 |
| 20100108890 | METHODS OF CHARACTERIZING AND MEASURING PARTICULATE FILTER ACCUMULATION - Methods of characterizing and measuring particulate accumulation in a family of particulate filters ( | 05-06-2010 |
| 20100201671 | METHODS AND APPARATUS FOR PRODUCING PRECISION CURRENT OVER A WIDE DYNAMIC RANGE - Methods and apparatus provide for producing a remote current for driving a load, comprising: producing a local current, Iref; amplifying the local current Iref by a value of K to produce a local current K Iref; mirroring the local current K Iref to another location; producing a remote current K Iref in response to the mirroring of the local current K Iref; and dividing the remote current K Iref by a matched value of K to produce a remote current Iref for driving the load. | 08-12-2010 |
| 20100213466 | PHOTOSENSORS INCLUDING SEMICONDUCTOR-ON-INSULATOR STRUCTURE - Photosensor based on SOI technology and display devices comprising the same. The photosensor can be a photodiode or a phototransistor, or a combination thereof when incorporated in a device. The photosensor exhibits a higher photoresponse than a traditional photosensor based on amorphous silicon film or polysilicon thin film technology. The present invention is useful, e.g., in making multifunctional display devices having photosensing function integrated therein. | 08-26-2010 |
| 20100244108 | CMOS IMAGE SENSOR ON A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND PROCESS FOR MAKING SAME - Methods and apparatus for producing a CMOS image sensor result in: a glass or glass ceramic substrate having first and second spaced-apart surfaces; a semiconductor layer disposed on the first surface of the glass or glass ceramic substrate; and a plurality of pixel structures formed in the semiconductor layer, each pixel structure including: at least first, second, and third semiconductor islands, each island operating as a color sensitive photo-detector and each being of a different thickness such that each is sensitive to a respective range of light wavelengths, and a fourth semiconductor island on which at least one transistor is disposed, the at least one transistor operating to at least one of buffer, select, and reset one or more of the photo-detectors. | 09-30-2010 |
| 20100276736 | CMOS IMAGE SENSOR ON STACKED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND PROCESS FOR MAKING SAME - Methods and apparatus for producing a CMOS image sensor result in a plurality of photo sensitive layers, each layer including: a glass or glass ceramic substrate having first and second spaced-apart surfaces; a semiconductor layer disposed on the first surface of the glass or glass ceramic substrate; and a plurality of pixel structures formed in the semiconductor layer, each pixel structure including a plurality of semiconductor islands, at least one island operating as a color sensitive photo-detector sensitive to a respective range of light wavelengths, wherein the plurality of photo sensitive layers are stacked one on the other, such that incident light enters the CMOS image sensor through the first spaced-apart surface of the glass or glass ceramic substrate of one of the plurality of photo sensitive layers, and subsequently passes into further photo sensitive layers if one or more wavelengths of the incident light are sufficiently long. | 11-04-2010 |
| 20100327354 | THIN FILM TRANSISTOR HAVING LONG LIGHTLY DOPED DRAIN ON SOI SUBSTRATE AND PROCESS FOR MAKING SAME - Methods and apparatus for producing a thin film transistor (TFT) result in: a glass or glass ceramic substrate; a single crystal semiconductor layer; a source structure disposed on the single crystal semiconductor layer; a drain structure disposed on the single crystal semiconductor layer; and a gate structure located with respect to the drain structure defining a lightly doped drain region therein, wherein a lateral length of the lightly doped drain region is such that the TFT exhibits a relatively low carrier mobility and moderate sub-threshold slope suitable for OLED display applications. | 12-30-2010 |
