Patent application number | Description | Published |
20080271992 | Apparatus and method for plating semiconductor wafers - An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided. | 11-06-2008 |
20090151753 | METHODS FOR TRANSITIONING A FLUID MENISCUS TO AND FROM SURFACES OF A SUBSTRATE - Methods for processing a substrate with a fluid meniscus are provided. One method includes positioning a transition surface substantially coplanar to a substrate surface. The transition surface is defined to be adjacent to an edge of the substrate. And, moving a fluid meniscus between the transition surface and the substrate surface. | 06-18-2009 |
20090260992 | Wafer Support Apparatus for Electroplating Process and Method for Using the Same - A multi-layered wafer support apparatus is provided for performing an electroplating process on a semiconductor wafer (“wafer”). The multi-layered wafer support apparatus includes a bottom film layer and a top film layer. The bottom film layer includes a wafer placement area and a sacrificial anode surrounding the wafer placement area. The top film layer is defined to be placed over the bottom film layer. The top film layer includes an open region to be positioned over a surface of the wafer to be processed, i.e., electroplated. The top film layer provides a liquid seal between the top film layer and the wafer, about a periphery of the open region. The top film layer further includes first and second electrical circuits that are each defined to electrically contact a peripheral top surface of the wafer at diametrically opposed locations about the wafer. | 10-22-2009 |
20090321250 | Apparatus for Plating Semiconductor Wafers - An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided. | 12-31-2009 |
20100170803 | Method and Apparatus for Plating Semiconductor Wafers - First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected. | 07-08-2010 |
20110132400 | Method and System for Uniformly Applying a Multi-Phase Cleaning Solution to a Substrate - An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height to off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point. | 06-09-2011 |
20140014146 | Method and System for Uniformly Applying a Multi-Phase Cleaning Solution to a Substrate - A system for cleaning a substrate includes a carrier and a cleaning station. The carrier is capable of holding the substrate and is movably coupled to a pair of guide tracks extending a length of the system. The cleaning station includes a force applicator and a gate. The force applicator has an applicator length and is operatively coupled to the cleaning station. The force applicator is rotatable and is adjusted to a first height off the surface of the carrier as the substrate is being cleaned. The force applicator has a hollow structure with internal channels and openings dispersed throughout the applicator length to dispense cleaning solution to substrate surface. The gate is affixed to a trailing edge of the force applicator and is set to a second height off the surface of the carrier. The gate includes a gate length that at least spans the applicator length. | 01-16-2014 |
20140202503 | METHOD AND SYSTEM FOR UNIFORMLY APPLYING A MULTI-PHASE CLEANING SOLUTION TO A SUBSTRATE - A system for cleaning a substrate includes a carrier and a cleaning station. The carrier is capable of holding the substrate and is movably coupled to a pair of guide tracks extending a length of the system. The cleaning station includes a force applicator, a gate and a dispenser. The force applicator has an applicator length and is coupled to the cleaning station, is rotatable and is adjustable to a first height off the surface of the carrier during cleaning. The gate is a hollow structure disposed at a trailing edge of the force applicator. The gate is set to a height off the carrier surface that is less than or equal to the first height. The gate includes a gate length that at least spans the applicator length. The dispenser is disposed at a leading edge of the force applicator and is configured to supply cleaning solution during cleaning. | 07-24-2014 |