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Caillat
Christian Caillat, Versonnex FR
| Patent application number | Description | Published |
|---|---|---|
| 20100259964 | TECHNIQUES FOR PROVIDING A SEMICONDUCTOR MEMORY DEVICE - Techniques for providing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a semiconductor memory device including a plurality of memory cells arranged in an array of rows and columns. Each memory cell may include a first region connected to a source line extending in a first orientation. Each memory cell may also include a second region connected to a bit line extending a second orientation. Each memory cell may further include a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region. The semiconductor device may also include a first barrier wall extending in the first orientation of the array and a second barrier wall extending in the second orientation of the array and intersecting with the first barrier wall to form a trench region configured to accommodate each of the plurality of memory cells. | 10-14-2010 |
Christian Caillat, Grenoble FR
| Patent application number | Description | Published |
|---|---|---|
| 20090121269 | INTEGRATED CIRCUIT COMPRISING A TRANSISTOR AND A CAPACITOR, AND FABRICATION METHOD - An integrated circuit includes a substrate and at least one active region. A transistor produced in the active region separated from the substrate. This transistor includes a source or drain first region and a drain or source second region which are connected by a channel. A gate structure is position on top of said channel and operates to control the channel. The gate structure is formed in a trench whose sidewalls have a shape which converges (narrows) in the width dimension towards the substrate. A capacitor is also formed having a first electrode, a second electrode and a dielectric layer between the electrodes. This capacitor is also formed in a trench. An electrode line is connected to the first electrode of the capacitor. The second electrode of the capacitor is formed in a layer shared in common with at least part of the drain or source second region of the transistor. A bit line is located beneath the gate structure. The integrated circuit may, for example, be a DRAM memory cell. | 05-14-2009 |
Lionel Caillat, Bigny-Vallenay FR
| Patent application number | Description | Published |
|---|---|---|
| 20110146525 | LAUNCHING DEVICES ENABLING SUB-CALIBER ARTILLERY PROJECTILES - The invention relates to a launching device for a sub-caliber artillery projectile employing a base with sliding band, the base being linked to sabot sectors by means of hinges that can be detached during flight, the opening of the sabot being activated thanks to the dynamic air pressure on the flared shapes to the fore of the sectors, said hinge is flanged radially so as to prevent its becoming separated from the sabot sectors 5 outside of the flight phase. | 06-23-2011 |
Patrice Caillat, Grenoble FR
| Patent application number | Description | Published |
|---|---|---|
| 20080255646 | Non-rectilinear lead and a system for deep electrical neurostimulation including such a lead - A lead for deep brain electrical stimulation, to be inserted into liquid cavities, such as ventricles, or cysternae or subarachnoidal spaces, the lead comprising: a tubular body of biocompatible material having a side wall defining a lumen, said tubular body being suitable for being inserted over at least a fraction of its length into the inside of a patient's body in order to reach a region for stimulation; electrodes disposed close to a distal end of the tubular body; and a rigid stylet for inserting removably into the lumen of said tubular body; the lead being wherein said tubular body has an equilibrium shape that is not rectilinear, being different from the shape of the stylet and presenting one and only one bend, and that is sufficiently flexible and elastic to follow the shape of said stylet by deforming reversibly when the stylet is inserted into the lumen. A deep electrical neurostimulation system comprising an electrical pulse generator and at least one such lead having its electrodes electrically connected to said generator. | 10-16-2008 |
| 20090012593 | Multiple electrode lead and a system for deep electrical neurostimulation including such a lead - A lead for deep electrical neurostimulation, the lead comprising: | 01-08-2009 |
| 20090317835 | DEVICE FOR SAMPLING CELLS BY CONTACT - A microtechnological device ( | 12-24-2009 |
| 20100049083 | DEVICE FOR CONTACT MOLECULAR SAMPLING | 02-25-2010 |
| 20110002526 | Method and Apparatus for Counting Thrombocytes - A method of counting thrombocytes contained in a sample of blood, the method having the steps: | 01-06-2011 |