Byunghoon
Byunghoon Ahn, Kyungki-Do KR
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20090236734 | Semiconductor Device With Cross-Talk Isolation Using M-CAP and Method Thereof - A semiconductor device is made by forming an oxide layer over a substrate and forming a first conductive layer over the oxide layer. The first conductive layer is connected to ground. A second conductive layer is formed over the first conductive layer as a plurality of segments. A third conductive layer is formed over the second conductive layer as a plurality of segments. If the conductive layers are electrically isolated, then a conductive via is formed through these layers. A first segment of the third conductive layer operates as a first passive circuit element. A second segment operates as a second passive circuit element. A third segment is connected to ground and operates as a shield disposed between the first and second segments. The shield has a height at least equal to a height of the passive circuit elements to block cross-talk between the passive circuit elements. | 09-24-2009 |
20110304011 | Semiconductor Device and Method of Forming Shielding Layer Around Back Surface and Sides of Semiconductor Wafer Containing IPD Structure - A semiconductor wafer has an insulating layer over a first surface of the substrate. An IPD structure is formed over the insulating layer. The IPD structure includes a MIM capacitor and inductor. A conductive via is formed through a portion of the IPD structure and partially through the substrate. The conductive via can be formed in first and second portions. The first portion is formed partially through the substrate and second portion is formed through a portion of the IPD structure. A first via is formed through a second surface of the substrate to the conductive via. A shielding layer is formed over the second surface of the substrate wafer. The shielding layer extends into the first via to the conductive via. The shielding layer is electrically connected through the conductive via to an external ground point. The semiconductor wafer is singulated through the conductive via. | 12-15-2011 |
20110304012 | Semiconductor Device and Method of Forming RF FEM With LC Filter and IPD Filter Over Substrate - A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver. | 12-15-2011 |
20120187531 | Semiconductor Device and Method of Forming Shielding Layer Around Back Surface and Sides of Semiconductor Wafer Containing IPD Structure - A semiconductor wafer has an insulating layer over a first surface of the substrate. An IPD structure is formed over the insulating layer. The IPD structure includes a MIM capacitor and inductor. A conductive via is formed through a portion of the IPD structure and partially through the substrate. The conductive via can be formed in first and second portions. The first portion is formed partially through the substrate and second portion is formed through a portion of the IPD structure. A first via is formed through a second surface of the substrate to the conductive via. A shielding layer is formed over the second surface of the substrate wafer. The shielding layer extends into the first via to the conductive via. The shielding layer is electrically connected through the conductive via to an external ground point. The semiconductor wafer is singulated through the conductive via. | 07-26-2012 |
20120299149 | Semicinductor Device with Cross-Talk Isolation Using M-CAP and Method Thereof - A semiconductor device is made by forming an oxide layer over a substrate and forming a first conductive layer over the oxide layer. The first conductive layer is connected to ground. A second conductive layer is formed over the first conductive layer as a plurality of segments. A third conductive layer is formed over the second conductive layer as a plurality of segments. If the conductive layers are electrically isolated, then a conductive via is formed through these layers. A first segment of the third conductive layer operates as a first passive circuit element. A second segment operates as a second passive circuit element. A third segment is connected to ground and operates as a shield disposed between the first and second segments. The shield has a height at least equal to a height of the passive circuit elements to block cross-talk between the passive circuit elements. | 11-29-2012 |
20120319302 | Semiconductor Device and Method of Forming RF FEM and RF Transceiver in Semiconductor Package - A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate. | 12-20-2012 |
20130069197 | Semiconductor Device and Method of Forming RF FEM with LC Filter and IPD Filter Over Substrate - A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver. | 03-21-2013 |
Byunghoon Chun, Yongin-City KR
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20140134341 | DEPOSITION APPARATUS AND METHOD OF DEPOSITING THIN LAYER USING THE SAME - In an aspect, a deposition apparatus including a deposition chamber, a first group deposition source unit, and a second group deposition source unit is provided. The deposition chamber may include a first standby area, a deposition area, and a second standby area. The deposition area may be located between the first and second standby areas. The first group deposition source unit may move to the deposition area from the first standby area and provides a first group deposition material to a base member located in the deposition area. The second group deposition source unit may move to the deposition area from the second standby area and provides a second group deposition material to the base member. | 05-15-2014 |
Byunghoon Jeong, Hwaseong-Si KR
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20150287475 | NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A nonvolatile memory device is provided. The nonvolatile memory device includes a memory cell array, an anti-fuse cell array, a sense amplifier, a page buffer, and a control logic. The memory cell array includes memory cells connected to word lines and bit lines. The anti-fuse cell array stores setting information for controlling the memory cell array. The anti-fuse cell array includes anti-fuse cells connected to the bit lines. The sense amplifier is connected to the bit lines to sense the memory cells or the anti-fuse cells. The page buffer stores data that is read out from the memory cells or the anti-fuse cells. The control logic controls the sense amplifiers and the page buffer to read out data from the memory cell array or the anti-fuse cell array. | 10-08-2015 |
Byunghoon Kang, Seoul KR
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20150376405 | BIOENVIRONMENT-SENSITIVE NANOPARTICLE COMPRISING POLYMER HAVING COMPLEMENTARY CHARGES - A bioenvironment-sensitive nanoparticle including a polymer having complementary charges, a method of manufacturing the same, and a pharmaceutical use of the bioenvironment-sensitive nanoparticle are disclosed. The bioenvironment-sensitive nanoparticle can be useful in stably and effectively delivering a target material such as a drug even when used at a small quantity since the nanoparticle is stable in extracellular environments. Also, the bioenvironment-sensitive nanoparticle can be useful in selectively diagnosing or treating cancer cells since the nanoparticle is specific to environments of the cancer cells. | 12-31-2015 |
Byunghoon Kim, Incheon KR
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20100072081 | GAS TREATING APPARATUS AND METHOD - Provided is a gas treating apparatus. The gas treating apparatus includes a storage chamber having a top wall, a bottom wall facing the top wall, and a sidewall connecting the top wall to the bottom wall, a gas collecting unit provided in the storage chamber and storing ionized gas, and an electromagnetic field generator converting a moving direction of the ionized gas. The electromagnetic generator includes at least one of a magnetic field generator generating a magnetic field in the storage chamber and an electric field generator generating an electric field in the storage chamber. | 03-25-2010 |
Byunghoon Ko, Suwon-Si KR
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20160106365 | METHOD AND APPARATUS FOR EXTRACTING ANAEROBIC THRESHOLD - A method and apparatus for extracting an anaerobic threshold are provided. The apparatus may acquire an electromyogram (EMG) signal, and may extract an anaerobic threshold based on a change in the EMG signal. The apparatus may extract a heart rate corresponding to the anaerobic threshold as an anaerobic threshold heart rate. | 04-21-2016 |
Byunghoon Lee, Seoul KR
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20130154089 | BUMP INCLUDING DIFFUSION BARRIER BI-LAYER AND MANUFACTURING METHOD THEREOF - Provided herein is a bump including a diffusion barrier bi-layer, the bump having: a conductive layer; a first diffusion barrier layer formed on or above the conductive layer, and comprising an alloy of nickel and phosphorus; a second diffusion barrier formed on or above the first diffusion barrier layer, and comprising copper; and a solder layer formed on or above the second diffusion barrier layer. A manufacturing method for producing a bump is also provided. | 06-20-2013 |
Byunghoon Seo, Seoul KR
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20130223341 | METHOD AND APPARATUS FOR DISCOVERING DEVICE IN WIRELESS COMMUNICATION NETWORK - A method and apparatus for discovering a device without an access point (AP) to perform P2P communication in a wireless communication network includes: receiving a probe request frame from another P2P device; determining whether a message requesting at least one of a phone number and user identification information is included in the received probe request frame; and transmitting a probe response frame including at least one of the phone number and the user identification information to the another P2P device when the message is included in the probe request frame. | 08-29-2013 |
20150257191 | METHOD AND APPARATUS FOR DISCOVERING DEVICE IN WIRELESS COMMUNICATION NETWORK - A method and apparatus for discovering a device without an access point (AP) to perform P2P communication in a wireless communication network includes: receiving a probe request frame from another P2P device; determining whether a message requesting at least one of a phone number and user identification information is included in the received probe request frame; and transmitting a probe response frame including at least one of the phone number and the user identification information to the another P2P device when the message is included in the probe request frame. | 09-10-2015 |
Byunghoon Yang, Seongnam KR
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20130134915 | CONTROL METHOD OF HYBRID VEHICLE - A control method of a vehicle having a motor according to an exemplary embodiment of the present invention can include confirming that a speed of the motor is not 0 and an output torque thereof is 0 in a condition that the vehicle is being operated, confirming that a voltage of the motor converges to a regular value, and accumulating control data for the motor and processing the control data to calculate an offset value of a resolver. Accordingly, the control method of a vehicle effectively determines whether the offset of the resolver is to be compensated without affecting the drivability of the vehicle. | 05-30-2013 |
Byunghoon Yang, Hwaseong KR
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20120143549 | METHOD FOR ADAPTIVELY COMPENSATING POSITION ERROR OF RESOLVER - Disclosed are an apparatus and method for adaptively compensating a position error of a resolver. The apparatus adaptively estimating a position error contained in position information of a rotor of a motor, which is digitalized by a resolver-digital converter, and subtracting the estimated position error from the measured position information of the rotor, thereby calculating compensated position information. A regression equation and a recursive least square method applied to the regression equation are used for the adaptive estimation of the position information. | 06-07-2012 |