Patent application number | Description | Published |
20090152527 | METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES - Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires. | 06-18-2009 |
20090219094 | DIFFERENTIAL AMPLIFIER CIRCUIT AND FREQUENCY MIXER FOR IMPROVING LINEARITY - A differential amplifier circuit and a frequency mixer for improving linearity are disclosed. The disclosed differential amplifier circuit includes first and second loads, a first output terminal for the first load, a second output terminal for the second load, a differential amplifying stage including a differential stage for amplifying a voltage difference between a first input stage and a second input stage, and a biasing current source for biasing the differential stage, and a non-linearity filtering circuit for filtering a non-linear signal generated from the differential amplifying stage. The non-linearity filtering circuit includes a first cross circuit including a first transistor to connect the first and second output terminals, and a second cross circuit including a second transistor to connect the first and second output terminals. The differential amplifier circuit achieves an improvement in linearity, as compared to conventional differential amplifier circuits, by offsetting, at a load side, a non-linear component generated at an active element of the differential amplifier circuit, to output only a linear current component. | 09-03-2009 |
20100140584 | METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES - Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires. | 06-10-2010 |
20100213434 | METHOD OF SYNTHESIZING NANOWIRES - A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method. | 08-26-2010 |
20110114894 | COMPOSITE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape. | 05-19-2011 |
20110121264 | COMPOSITE STRUCTURE OF GRAPHENE AND NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME - A composite structure includes; graphene and at least one substantially one-dimensional nanostructure disposed on the graphene. | 05-26-2011 |
20150061161 | WIRE STRUCTURE AND SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHOD OF MANUFACTURING THE WIRE STRUCTURE - According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon. | 03-05-2015 |
20150111381 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND COMPUTING SYSTEM FOR IMPLEMENTING THE METHOD - Provided are method of fabricating semiconductor device and computing system for implementing the method. The method of fabricating a semiconductor device includes forming a target layer, forming a first mask on the target layer to expose a first region, subsequently forming a second mask on the target layer to expose a second region separated from the first region in a first direction, subsequently forming a third mask in the exposed first region to divide the first region into a first sub region and a second sub region separated from each other in a second direction intersecting the first direction, and etching the target layer using the first through third masks such that the first and second sub regions and the second region are defined in the target layer. | 04-23-2015 |