| Patent application number | Description | Published |
|---|
| 20100263594 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat. | 10-21-2010 |
| 20110008540 | CANISTER FOR DEPOSITION APPARATUS, AND DEPOSITION APPARATUS AND METHOD USING THE SAME - A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage. | 01-13-2011 |
| 20110041767 | METAL CAPTURING APPARATUS AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME - A metal capturing apparatus and an atomic layer deposition apparatus, which are capable of discharging an exhaust gas from a process chamber, in which a metal atomic layer is deposited on a substrate using a reaction gas containing a metal catalyst, without a scrubber, and easily reusing the metal catalyst contained in the exhaust gas. The metal capturing apparatus includes a capturing chamber having a capturing space, a capturing plate disposed at one side of the capturing chamber and partially inserted into the capturing chamber, a refrigerant source feeding a refrigerant cooling the capturing plate, and an attachment unit attaching the capturing plate to the capturing chamber. The atomic layer deposition apparatus includes a process chamber, a vacuum pump connected to an exhaust port of the process chamber, and a metal capturing apparatus disposed between the process chamber and the vacuum pump. | 02-24-2011 |
| 20110083960 | SPUTTERING APPARATUS - A sputtering apparatus that is capable of uniformly depositing an ultra-low concentration metal catalyst on a substrate having an amorphous silicon layer in order to crystallize the amorphous silicon layer. The sputtering apparatus includes a process chamber, a metal target located inside the process chamber, a substrate holder located opposite the metal target, and a vacuum pump connected with an exhaust pipe of the process chamber. An area of the metal target is more than 1.3 times an area of a substrate placed on the substrate holder. | 04-14-2011 |
| 20110100973 | APPARATUS FOR THERMALLY PROCESSING SUBSTRATE - An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates. | 05-05-2011 |
| 20110114963 | Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region. | 05-19-2011 |
| 20110120859 | SPUTTERING APPARATUS - Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm. | 05-26-2011 |
| 20110121309 | METHOD OF FABRICATING POLYSILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer. | 05-26-2011 |
