Patent application number | Description | Published |
20090088324 | Outer rotor superconductor journal bearing - An outer rotor superconductor journal bearing that comprising modules and including an outer rotor superconductor journal bearing that cools a superconductor that is mechanically fixed to a module below a critical temperature, attains a strong magnetic fixing force in an axial direction and a radial direction, prevents the superconductor from being damaged due to a different thermal expansion between the superconductor and a cryostat when cooled, and is easier for assembling and repair and maintenance. Preferably, the outer rotor superconductor journal bearing includes a rotor in which a solid of revolution magnet is magnetized in an axis direction in an inner portion of an inner circumference thereof; and a stator comprising a cryostat in the shape of a cylinder in which a superconductor that is tightly adhered to an inner circumference of the rotor is mounted in an outer circumference of the cryostat. | 04-02-2009 |
20100101365 | FLYWHEEL STRUCTURE OF ENERGY STORAGE APPARATUS - Provided is a flywheel structure of an apparatus for storing energy (particularly electric power), and more particularly, to a flywheel structure of an energy storage apparatus, which allows stable operation since upper and lower thrust collars are installed on an upper and lower faces of a rotor or a hub of the flywheel, respectively and the system thus can be balanced after assembly is completed in a state that all parts including the thrust collars are assembled and which can control vibration effectively since axial displacement is controlled at upper and lower sides of the center of gravity. To this end, the present invention provides a flywheel structure of an energy storage apparatus comprising a central shaft connected to a bearing for restricting a radial direction and an electric motor, a rotor of a high strength for storing rotational energy, a hub for connecting the central shaft and the rotor, and a thrust collar mounted on the central shaft, wherein upper and lower thrust collars are installed on upper and lower face of the rotor or the hub, respectively. | 04-29-2010 |
20100231075 | LARGE CAPACITY HOLLOW-TYPE FLYWHEEL ENERGY STORAGE DEVICE - Disclosed is a large capacity hollow-type flywheel energy storage device. The energy storage device includes a hollow shaft, a vacuum chamber receiving the hollow shaft, a flywheel having a predetermined weight and disposed at an inner edge of the vacuum chamber, and a hub connecting the flywheel to the hollow shaft and disposed in the vacuum chamber to be rotatable together with the flywheel. A superconductive bearing and an electromagnet bearing are disposed inside and outside the hollow shaft, respectively, such that magnetic forces thereof can be shielded from each other. Thus, magnetic interference between the superconductive bearing and the electromagnet bearing is shielded by the magnet shield interposed therebetween, thereby preventing rotation loss by stabilizing a structural mechanism during rotation while improving design adaptability. | 09-16-2010 |
20110100156 | STRESS-REDUCING TYPE ROTOR - A rotor reducing stress concentration generated by centrifugal force, the rotor having interference fit between a reinforcing ring and the external circumference of a rotor cylinder or rotor cylinder having a hole, wherein the rotor preliminarily rotates at high speed so that the rotor is plastic-deformed in advance, so that less plastic-deformation occurs even when the rotor rotates at high speed compared to the case where plastic deformation is not performed in advance. | 05-05-2011 |
Patent application number | Description | Published |
20090085143 | Image sensor and method of manufacturing the same - Image sensors and methods of fabricating the same are provided. An image sensor may include a substrate, a first pad provided on a front side of the substrate, a second pad provided on a backside of the substrate, one or more contacts, each of the contacts passing through the substrate and electrically connecting the first pad with the second pad, and one or more guard rings, each of the guard rings surrounding one or more contacts and having insulating characteristics. | 04-02-2009 |
20090140365 | Image sensor with back-side illuminated photoelectric converters - An image sensor includes a circuit substrate, a plurality of isolation regions, a plurality of photoelectric converters, and an insulation layer. The isolation regions are formed in a pixel region having the photoelectric converters formed therein with each photoelectric converter being electrically isolated by the isolation regions. The insulation layer is formed in a pad region with a substantially same depth as the isolation regions. The isolation region and the insulation layer are simultaneously formed for efficient fabrication of the image sensor. | 06-04-2009 |
20090194835 | IMAGE SENSOR - An image sensor capable of reducing crosstalk between pixels is provided. The image sensor includes a photoelectric converter formed in a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a plurality of structures formed on the interlayer insulating layer, each of the plurality of structures including an insulating pillar, a metal interconnection formed on the insulating pillar, and a spacer formed at both sides of the metal interconnection and both sides of the insulating pillar. The plurality of structures are spaced a predetermined interval apart from each other in a longitudinal direction. The image sensor further includes an intermetal insulating layer filling spaces between the plurality of structures and covering top surfaces of the plurality of structures. | 08-06-2009 |
20090317933 | Method of manufacturing a CMOS image sensor - In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer. | 12-24-2009 |
20100006969 | Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods - A method of fabricating a CMOS image sensor includes forming a substrate structure that includes a first substrate, a second substrate, and an index matching layer containing nitrogen and an oxide layer between the first and second substrates, and, forming at least one light-sensing device in the second substrate, and after forming the substrate structure, forming a metal interconnection structure on a first surface of the second substrate, the first surface facing away from the first substrate, such that the at least one light sensing device is between the metal interconnection structure and the index matching layer and the oxide layer, the metal interconnection structure being electrically connected to the at least one light-sensing device. | 01-14-2010 |
20100203665 | Methods of manufacturing an image sensor having an air gap - In an example embodiment, the method of manufacturing an image sensor includes forming an interlayer dielectric (ILD) on a substrate. The substrate may have a plurality of pixels arranged thereon and each of the pixels includes a photoelectric conversion device configured to sense external light and generate photo charges. Furthermore, the method may include forming a metal on the ILD and removing portions of the metal to form a reflection pattern. Additionally, the method may include removing the ILD to a depth to form a trench adjacent to the reflection pattern and forming an air gap in the trench by forming oxide over the substrate such that the reflection pattern and the upper portion of the trench are covered. | 08-12-2010 |
20100207226 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer. | 08-19-2010 |
20100244175 | Image sensor and method of fabricating the same - The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well. | 09-30-2010 |
20120091515 | Semiconductor Devices Having Backside Illuminated Image Sensors - A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern. | 04-19-2012 |
20120238051 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well. | 09-20-2012 |
20130017646 | METHOD OF MANUFACTURING IMAGE SENSOR HAVING BACKSIDE ILLUMINATION STRUCTUREAANM KIM; Sang-hoonAACI Seongnam-siAACO KRAAGP KIM; Sang-hoon Seongnam-si KRAANM PARK; Byung-junAACI Yongin-siAACO KRAAGP PARK; Byung-jun Yongin-si KRAANM AN; Hee-chulAACI Yongin-siAACO KRAAGP AN; Hee-chul Yongin-si KR - A method of manufacturing an image sensor having a backside illumination (BSI) structure includes forming a wiring unit on a front side of a semiconductor substrate, forming an anti-reflective layer in an active pixel sensor (APS) region on a back side of the semiconductor substrate, a photodiode being between the back and front sides of the semiconductor substrate, forming an etch stopping layer on the anti-reflective layer, forming an interlayer insulating layer on the etch stopping layer, the interlayer insulating layer having an etch selectivity with respect to the etch stopping layer, and etching the interlayer insulating layer in the APS region using the etch stopping layer as an etch stopping point. | 01-17-2013 |
20140374868 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor includes a plurality of photo detectors and a plurality of trench isolations configured to isolate the photo detectors from each other. Each of the trench isolations includes a plurality of films in a multi-layer structure. A method of manufacturing an image sensor includes forming a plurality of trench isolations to isolate a plurality of photo detectors from each other, forming a first film in each of the trench isolations, and forming a second film that constructs a multi-layer structure together with the first film. | 12-25-2014 |
20150076649 | STACK TYPE IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME - An electronic device may include a first semiconductor layer, a first electrode layer on the semiconductor layer, an adhesive insulating layer on the first electrode layer, a second electrode layer on the adhesive insulating layer, a second semiconductor layer. The first electrode layer may include a first plurality of electrodes, the first electrode layer may be between the adhesive insulating layer and the first semiconductor layer, and the adhesive insulating layer may include at least one of SiOCN, SiBN, and/or BN. The second electrode layer may include a second plurality of electrodes, the adhesive insulating layer may be between the first and second electrode layers, and the second electrode layer may be between the adhesive insulating layer and the second semiconductor layer. | 03-19-2015 |