| Patent application number | Description | Published |
|---|
| 20080197916 | Low-Voltage Noise Preventing Circuit Using Abrupt Metal-Insulator Transition Device - Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed. | 08-21-2008 |
| 20080277763 | Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the Wafer - Provided are a wafer with the characteristics of abrupt metal-insulator transition (MIT), and a heat treatment apparatus and method that make it possible to mass-produce a large-diameter wafer without directly attaching the wafer to a heater or a substrate holder. The heat treatment apparatus includes a heater applying heat to a wafer having the characteristics of abrupt MIT and one surface covered with a thermally opaque film, and a plurality of fixing units formed along an edge portion of a top surface of the heater to fix the wafer to the heater. | 11-13-2008 |
| 20080297358 | Temperature Sensor Using Abrupt Metal-Insulator Transition (Mit) and Alarm Comprising the Temperature Sensor - Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device. | 12-04-2008 |
| 20080315775 | Electron Emission Device Using Abrupt Metal-Insulator Transition and Display Including the Same - An electron emission device having a high electron emitting rate and a display including the device are prodivided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer. | 12-25-2008 |
| 20090011145 | Method of Manufacturing Vanadium Oxide Thin Film - Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film. | 01-08-2009 |
| 20090057820 | ABRUPT METAL-INSULATOR TRANSITION DEVICE WITH PARALLEL CONDUCTING LAYERS - An abrupt MIT (metal-insulator transition) device with parallel conducting layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one conducting layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the conducting layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the conducting layer, which is typically caused by current flowing through the conducting layer, is less likely to occur. | 03-05-2009 |
| 20090091003 | INSULATOR UNDERGOING ABRUPT METAL-INSULATOR TRANSITION, METHOD OF MANUFACTURING THE INSULATOR, AND DEVICE USING THE INSULATOR - Provided are an insulator that has an energy band gap of 2 eV or more and undergoes an abrupt MIT without undergoing a structural change, a method of manufacturing the insulator, and a device using the insulator. The insulator is abruptly transitioned from an insulator phase into a metal phase by an energy change between electrons without undergoing a structural change. | 04-09-2009 |
| 20090114896 | MEMORY DEVICE USING ABRUPT METAL-INSULATOR TRANSITION AND METHOD OF OPERATING THE SAME - Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer. | 05-07-2009 |
| 20090208639 | METHOD OF FORMING VANADIUM TRIOXIDE THIN FILM SHOWING ABRUPT METAL-INSULATOR TRANSITION - Provided is a method of manufacturing a V | 08-20-2009 |
| 20090230428 | DEVICES USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE - The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to | 09-17-2009 |
| 20090286140 | LITHIUM SECONDARY BATTERY INCLUDING DISCHARGE UNIT - Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion. | 11-19-2009 |
| 20090315724 | PROGRAMMABLE MIT SENSOR USING THE ABRUPT MIT DEVICE, AND ALARM APPARATUS AND SECONDARY BATTERY ANTI-EXPLOSION CIRCUIT INCLUDING THE MIT SENSOR - Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery. | 12-24-2009 |
| 20100060369 | OSCILLATION CIRCUIT BASED ON METAL-INSULATOR TRANSITION DEVICE AND METHOD OF DRIVING THE OSCILLATION CIRCUIT - Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source. | 03-11-2010 |
| 20100071751 | PHOTO-INDUCED METAL-INSULATOR-TRANSITION MATERIAL COMPLEX FOR SOLAR CELL, SOLAR CELL AND SOLAR CELL MODULE COMPRISING THE SAME - Provided are a photo-induced metal-insulator-transition (MIT) material complex for a solar cell which can be used to manufacture highly efficient solar cells with more carriers than an impurity solar cell, and a solar cell including the MIT material complex, and a solar cell module. The solar cell includes: a substrate; a lower electrode formed on the substrate; a photo-induced MIT material complex formed on the lower electrode, wherein electrons and holes are formed when light is incident on n-type and p-type metal conductors that are bonded to each other, and the electrons and holes in an intrinsic energy level or gap become carriers, and a potential difference is generated; an anti-reflection layer formed on the MIT material complex; and an upper electrode that is formed to pass through the anti-reflection layer and to contact the MIT material complex. The n-type and p-type metal conductors are MIT materials which are insulators (or semiconductors) that have a metallic electronic structure at room temperature and also intrinsic energy levels, and an odd number of electrons or holes are in their outermost electron shell of the metallic electronic structure of the MIT materials. When an intrinsic energy level of the solar cell is broken, a greater number of carriers are induced than the number of carriers induced from an impurity level of a semiconductor. Accordingly, the solar cell has more carriers than carriers induced from an impurity level of a semiconductor solar cell. | 03-25-2010 |
| 20100085126 | OSCILLATION CIRCUIT INCLUDING MIT DEVICE AND METHOD OF ADJUSTING OSCILLATION FREQUENCY OF THE OSCILLATION CIRCUIT - Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor. | 04-08-2010 |
| 20100134936 | CIRCUIT FOR PROTECTING ELECTRICAL AND/OR ELECTRONIC SYSTEM BY USING ABRUPT METAL-INSULATOR TRANSITION DEVICE AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT - Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system. | 06-03-2010 |
| 20100193824 | 2-TERMINAL SEMICONDUCTOR DEVICE USING ABRUPT METAL-INSULATOR TRANSITION SEMICONDUCTOR MATERIAL - Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer. | 08-05-2010 |
| 20100258787 | FIELD EFFECT TRANSISTOR HAVING GRAPHENE CHANNEL LAYER - Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer. | 10-14-2010 |
