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Byun, CA
Daniel Byun, Newark, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110024049 | LIGHT-UP PREVENTION IN ELECTROSTATIC CHUCKS - An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided. | 02-03-2011 |
| 20110058302 | METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL - A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred. | 03-10-2011 |
Daniel Byun, Alameda, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100273755 | DIAMIDE COMPOUNDS HAVING MUSCARINIC RECEPTOR ANTAGONIST AND BETA2 ADRENERGIC RECEPTOR AGONIST ACTIVITY - This invention relates to a compound of formula I: | 10-28-2010 |
Hyang-Min Byun, Glendale, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080234223 | N4 MODIFICATIONS OF PYRIMIDINE ANALOGS AND USES THEREOF - The present invention relates to N4 carboxylester or ester derivatives of pyrimidine analogs with increased stability, solubility, and bioavailability. Also disclosed are methods of using these compounds for targeted drug delivery and combination therapy. | 09-25-2008 |
Jeong Byun, Cupertino, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090011609 | RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP MEMORY DEVICE - A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed thereon. A portion of the charge-trapping layer is then oxidized to form a blocking dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process. | 01-08-2009 |
| 20090242962 | Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices - A blocking layer of a non-volatile charge trap memory device is formed by oxidizing a portion of a charge trapping layer of the memory device. In one embodiment, the blocking layer is grown by a radical oxidation process at temperature below 500° C. In accordance with one implementation, the radical oxidation process involves flowing hydrogen (H | 10-01-2009 |
Jeong Soo Byun, Cupertino, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080227291 | FORMATION OF COMPOSITE TUNGSTEN FILMS - Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process. | 09-18-2008 |
| 20080280438 | METHODS FOR DEPOSITING TUNGSTEN LAYERS EMPLOYING ATOMIC LAYER DEPOSITION TECHNIQUES - In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process. | 11-13-2008 |
| 20090156004 | METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES - In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers. | 06-18-2009 |
| 20100093170 | METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES - In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers. | 04-15-2010 |
| 20100099270 | ATOMIC LAYER DEPOSITION APPARATUS - A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber. | 04-22-2010 |
| 20110111603 | ATOMIC LAYER DEPOSITION APPARATUS - A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber. | 05-12-2011 |
| 20120003782 | METHOD FOR FORMING IMAGE SENSOR WITH SHIELD STRUCTURES - An image sensor having shield structures and methods of forming the same are provided. Generally, the image sensor includes: (i) substrate having at least one photosensitive element formed therein; (ii) a dielectric layer overlying the substrate and the photosensitive element; and (iii) an annular reflective waveguide disposed in the dielectric layer above the photosensitive element to reduce cross-talk between adjacent elements of the sensor while increasing sensitivity of the sensor. In certain embodiments, the sensor further includes a photoshield disposed in the dielectric above the photosensitive element and about the waveguide to further reduce the possibility of cross-talk. Other embodiments are also disclosed. | 01-05-2012 |
| 20120006265 | ATOMIC LAYER DEPOSITION APPARATUS - A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided. | 01-12-2012 |
Ji-Won Byun, Redwood City, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100241641 | VIEW MECHANISM FOR DATA SECURITY, PRIVACY AND UTILIZATION - A machine-implemented method and machine-readable media for transforming sensitive data in a database is provided. Sensitive data in the database are transformed based on a query context of a query. The query may also be transformed. The transformed query may be applied against the transformed sensitive data to construct a query result. The query result with the transformed sensitive data represents a lenticular view. The lenticular view represents a modified form of the sensitive data that an end-user is allowed access to. | 09-23-2010 |
| 20110067084 | METHOD AND APPARATUS FOR SECURING A DATABASE CONFIGURATION - One embodiment of the present invention provides a system that secures a database configuration from undesired modifications. This system allows a security officer to issue a configuration-locking command, which activates a lock for the configuration of a database object. When a configuration lock is activated for a database object, the system prevents a user (e.g., a database administrator) from modifying the configuration of the database object, without restricting the user from accessing the database object itself. The security officer is a trusted user that is responsible for maintaining the stability of the database configuration, such that a configuration lock activated by the security officer preserves the database configuration by overriding the privileges assigned to a database administrator. | 03-17-2011 |
Jungsub Byun, San Ramon, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110151864 | Wireless Network Interference Management Using Geographic Data - An interference management system of a wireless network provider using geographic data and network information to recommend and/or facilitate transfer of services to an alternative connection. | 06-23-2011 |
| 20110153808 | METHOD AND SYSTEM FOR PROVIDING A PERFORMANCE REPORT IN A WIRELESS NETWORK - A method and system for providing a performance report in a communication network are disclosed. For example, the method establishes a session with a mobile endpoint device, and monitors at least one performance parameter associated with the session by the mobile endpoint device. The method detects a termination of the session, and sends the performance report associated with the session to the communication network, wherein the performance report comprises information associated with the at least one performance parameter for the session. | 06-23-2011 |
Jungsub Byun, Foster City, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20120131608 | Remote Healthcare Services Over Internet Protocol Television - A particular method includes communicating a media stream in response to receiving a channel change request (e.g., a request to view an interactive health channel) from a first device associated with a patient. The media stream is received from a second device associated with a healthcare provider and is communicated to the first device via an internet protocol television (IPTV) network. The method further includes communicating patient data received from the first device associated with the patient to the second device associated with the healthcare provider via the IPTV network. | 05-24-2012 |