| Patent application number | Description | Published |
|---|
| 20080227230 | Quantum dot vertical cavity surface emitting laser and fabrication method of the same - A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL. | 09-18-2008 |
| 20080238299 | NANODOT ELECTROLUMINESCENT DIODE OF TANDEM STRUCTURE AND METHOD FOR FABRICATING THE SAME - A nanodot electroluminescent diode is disclosed. The nanodot electroluminescent diode comprises a lower electrode, an upper electrode, and unit cells interposed between the electrodes, wherein the unit cells comprise a quantum dot electroluminescent layer and also include an organic layer and/or an inorganic layer in addition to the quantum dot electroluminescent layer. The disclosed nanodot electroluminescent diode provides high efficiency, stability, and high luminance, and mixed colors, multi-colors, full color, and white electroluminescence can be obtained. | 10-02-2008 |
| 20080309234 | ALTERNATING CURRENT DRIVING TYPE QUANTUM DOT ELECTROLUMINESCENT DEVICE - An alternating current driving type quantum dot electroluminescent device includes; a first electrode, a second electrode, a quantum dot light-emitting layer disposed between the first electrode and the second electrode, and at least one layer selected from the group consisting of a tunneling layer, a bipolar layer, a dielectric layer, an insulating layer, and a combination of layers thereof, disposed between at least one of the first electrode and the quantum dot light-emitting layer, and the second electrode and the quantum dot light-emitting layer. | 12-18-2008 |
| 20090008628 | LIGHT-EMITTING DEVICE AND LIGHT-RECEIVING DEVICE USING TRANSISTOR STRUCTURE - Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity. | 01-08-2009 |
| 20090008664 | NANOWIRE LIGHT EMITTING DEVICE - A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material. | 01-08-2009 |
| 20090009057 | QUANTUM DOT OPTICAL DEVICE - Disclosed herein is a quantum dot optical device, including: a substrate; a hole injection electrode; a hole transport layer; a quantum dot luminescent layer; an electron transport layer; and an electron injection electrode, wherein a light-emitting surface of the device has a periodical projection structure. | 01-08-2009 |
| 20090039764 | Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer - Disclosed herein a quantum dot light-emitting device which has an inorganic electron transport layer. According to the device, an electron transport layer formed by an inorganic materials, thereby providing a high electron transport velocity or electron density and improving a light emitting efficiency. Further, interlayer resistance between electrode and organic-electron transporting layer or between quantum dot light-emitting layer and organic-electron transporting layer is prohibit, thus increasing a light emitting efficiency of diode. | 02-12-2009 |
| 20090045720 | Method for producing nanowires using porous glass template, and multi-probe, field emission tip and devices employing the nanowires - Disclosed herein is a method for producing nanowires, which features the use of a porous glass template in combination with a solid-liquid-solid or vapor-liquid-solid process for growing nanowires which are highly straight and have nanoparticles precisely arranged therein. The nanowires can be grown into composite structures of superlattices and hybrids by modulating the composition of the materials provided thereto. Also disclosed is the use of the nanowires in multi-probes, field emission tips, and devices. | 02-19-2009 |
| 20090053126 | METHOD FOR MASS PRODUCTION OF NANOSTRUCTURES USING MESOPOROUS TEMPLATES AND NANOSTRUCTURES PRODUCED BY THE SAME - A method for the mass production of nanostructures is provided. The method comprises introducing metal catalyst nanoparticles into a plurality of uniformly sized pores of mesoporous templates, distributing the templates containing the metal catalyst nanoparticles in a three-dimensional manner, and introducing a nanowire source into the pores of the templates to grow the nanowire source into nanowires along the length of the pores. Further provided are nanostructures produced by the method. The nanostructures have a uniform thickness. In addition, the nanostructures may have various shapes and can be controllably doped. The nanostructures can be applied to a variety of devices, including electronic devices, e.g., field effect transistors (FETs) and light-emitting diodes (LEDs), photodetectors, nano-analyzers, and high-sensitivity signal detectors for various applications, e.g., cancer diagnosis. | 02-26-2009 |
| 20090057653 | METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES - Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires. | 03-05-2009 |
| 20090081429 | OPTICAL FILM HAVING GRADED REFRACTIVE INDEX AND METHOD OF MANUFACTURING THE SAME - Disclosed are an optical film having a graded refractive index and a method of manufacturing the same. The optical film includes one or more antireflection films composed of a mesoporous material having a plurality of pores of a uniform size, and the pores of the mesoporous material are filled with air or a filler having a refractive index different from that of the mesoporous material, and thus the volume ratio of mesoporous material to filler in the pores thereof is controlled, thereby obtaining a desired magnitude of effective refractive index and ensuring a refractive index distribution in which the refractive indexes sequentially change, resulting in high antireflection performance. The method of manufacturing the optical film may be conducted using a nanowire growing technique, thus making it easy to realize mass production. | 03-26-2009 |
| 20090152527 | METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES - Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires. | 06-18-2009 |
| 20100051583 | METHOD FOR PREPARING POROUS MATERIAL USING NANOSTRUCTURES AND POROUS MATERIAL PREPARED BY THE SAME - Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures in a particular direction, and removing the nanostructures by etching. According to the method, the size, shape, orientation and regularity of pores of the porous material can be easily controlled, and the preparation of the porous material is simplified, leading to a reduction in preparation costs. | 03-04-2010 |
| 20100065809 | NANOWIRE COMPRISING SILICON RICH OXIDE AND METHOD FOR PRODUCING THE SAME - Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like. | 03-18-2010 |
| 20100072890 | INORGANIC ELECTROLUMINESCENT DEVICE AND DISPLAY APPARATUS EMPLOYING THE SAME - An inorganic electroluminescent device includes; a conductive layer, a fluorescent material layer disposed on a surface of the conductive layer, a dielectric material layer disposed on a surface of the conductive layer substantially opposite to the surface on which the fluorescent material layer is disposed, a first electrode disposed on the fluorescent layer, and a second electrode disposed on the dielectric material layer. | 03-25-2010 |
| 20100108984 | QUANTUM DOT ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME - A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface. | 05-06-2010 |
| 20100140584 | METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES - Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires. | 06-10-2010 |
| 20100144126 | METHODS FOR SITE-SELECTIVE GROWTH OF HORIZONTAL NANOWIRES, NANOWIRES GROWN BY THE METHODS AND NANODEVICES COMPRISING THE NANOWIRES - Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high degree of integration. Further provided are nanowires grown by the methods and nanodevices comprising the nanowires. | 06-10-2010 |
| 20100208493 | LIGHT GUIDE PLATE AND DISPLAY APPARATUS COMPRISING THE SAME - A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto. | 08-19-2010 |
| 20100213434 | METHOD OF SYNTHESIZING NANOWIRES - A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method. | 08-26-2010 |
| 20100213438 | QUANTUM DOT LIGHT EMITTING DEVICE HAVING QUANTUM DOT MULTILAYER - A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer. | 08-26-2010 |
| 20100327258 | METHOD FOR PRODUCING CORE-SHELL NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANOWIRE DEVICE COMPRISING THE NANOWIRES - Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a simple manner. Further disclosed are nanowires produced by the method and a nanowire device comprising the nanowires. The use of the nanowires leads to an increase in the light emitting/receiving area of the device. Therefore, the device exhibits high luminance/efficiency characteristics. | 12-30-2010 |
| 20110101303 | LIGHT-EMITTING DEVICE COMPRISING SEMICONDUCTOR NANOCRYSTAL LAYER FREE OF VOIDS AND METHOD FOR PRODUCING THE SAME - A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability. | 05-05-2011 |
| 20110121264 | COMPOSITE STRUCTURE OF GRAPHENE AND NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME - A composite structure includes; graphene and at least one substantially one-dimensional nanostructure disposed on the graphene. | 05-26-2011 |
| 20110133153 | POROUS NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME - Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure. | 06-09-2011 |
