| Patent application number | Description | Published |
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| 20090092138 | APPARATUS AND METHOD FOR GENERATING AND PARSING MAC PDU IN A MOBILE COMMUNICATION SYSTEM - An apparatus and method for generating and parsing a MAC PDU in a mobile communication system are provided in which LCIDs of MAC SDUs to be multiplexed are checked, the length of an LF is determined for each of the MAC SDUs, referring to LF lengths predetermined for the LCIDs, a MAC header including the LCIDs and LFs of the determined lengths for the MAC SDUs is generated, and a MAC PDU is generated by attaching the MAC header to payload including the MAC SDUs. During the MAC header generation, if a padding size required for the MAC PDU generation calculated taking into account the absence of a last LF in the MAC header is larger than the length of the last LF, the last LF is included in the MAC header, the required padding size is recalculated, taking into account the inclusion of the last LF, and a padding is added according to the re-calculated padding size. | 04-09-2009 |
| 20100246491 | OPERATING METHOD AND APPARATUS ACCORDING TO DATA DUPLICATE RETRANSMISSION IN MOBILE COMMUNICATION SYSTEM - An operating method and an apparatus according to data duplicate retransmission in a mobile communication system are provided. A method of a User Equipment (UE) according to data duplicate retransmission in a mobile communication system includes storing a Media Access Control Protocol Data Unit (MAC PDU) received from an Evolved Node B (ENB) in a soft buffer, decoding the MAC PDU, determining whether the decoding is a first successful decoding of data of the corresponding soft buffer, and determining whether to forward the decoded MAC PDU to an upper layer according to the determination result. | 09-30-2010 |
| 20100303095 | APPARATUS AND METHOD FOR GENERATING AND PARSING MAC PDU IN A MOBILE COMMUNICATION SYSTEM - An apparatus and method for generating and parsing a MAC PDU in a mobile communication system are provided in which LCIDs of MAC SDUs to be multiplexed are checked, the length of an LF is determined for each of the MAC SDUs, referring to LF lengths predetermined for the LCIDs, a MAC header including the LCIDs and LFs of the determined lengths for the MAC SDUs is generated, and a MAC PDU is generated by attaching the MAC header to payload including the MAC SDUs. During the MAC header generation, if a padding size required for the MAC PDU generation calculated taking into account the absence of a last LF in the MAC header is larger than the length of the last LF, the last LF is included in the MAC header, the required padding size is recalculated, taking into account the inclusion of the last LF, and a padding is added according to the re-calculated padding size. | 12-02-2010 |
| Patent application number | Description | Published |
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| 20080272355 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR FORMING THE SAME - A memory device using a phase change material and a method for forming the same are disclosed. One embodiment of a memory device includes a first insulating layer provided on a substrate and defining an opening; a first conductor including a first portion and a second portion, the first portion provided on a bottom of the opening, the second portion being continuously provided along a sidewall of the opening; a variable resistor connected to the second portion of the first conductor and provided along the sidewall of the opening; and a second conductor provided on the variable resistor. | 11-06-2008 |
| 20090075420 | METHOD OF FORMING CHALCOGENIDE LAYER INCLUDING TE AND METHOD OF FABRICATING PHASE-CHANGE MEMORY DEVICE - The method of forming a Te-containing chalcogenide layer includes radicalizing a first source that contains Te to form a radicalized Te source, and forming a Te-containing chalcogenide layer by supplying the radicalized Te source into a reaction chamber. A method fabricating a phase change memory device includes loading a substrate on which a lower electrode is formed into a reaction chamber, radicalizing a first source that contains Te to form a radicalized Te source, forming a phase change material film containing Te on the lower electrode by supplying the radicalized Te source into the reaction chamber, and forming an upper electrode on the phase change material film. | 03-19-2009 |
| 20090097305 | METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE - In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR | 04-16-2009 |
