Patent application number | Description | Published |
20080283817 | PHASE-CHANGE NONVOLATILE MEMORY DEVICE USING Sb-Zn ALLOY AND MANUFACTURING METHOD THEREOF - Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption. | 11-20-2008 |
20090140148 | BOLOMETER AND METHOD OF MANUFACTURING THE SAME - A bolometer having decreased noise and increased temperature sensitivity and a method of manufacturing the same are provided. The bolometer has a resistive layer formed of single crystalline silicon (Si) or silicon germanium (Si | 06-04-2009 |
20090146058 | RESISTIVE MATERIALS FOR MICROBOLOMETER, METHOD FOR PREPARATION OF RESISTIVE MATERIALS AND MICROBOLOMETER CONTAINING THE RESISTIVE MATERIALS - Provided are resistive materials for a microbolometer, a method for preparation of resistive materials and a microbolometer containing the resistive materials. The resistive materials for the microbolometer include an alloy of silicon and antimony or an alloy of silicon, antimony and germanium, which has a high TCR and a low resistance. | 06-11-2009 |
20090146128 | ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME - Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed. | 06-11-2009 |
20090152466 | MICROBOLOMETER WITH IMPROVED MECHANICAL STABILITY AND METHOD OF MANUFACTURING THE SAME - Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer. | 06-18-2009 |
20090152467 | MULTILAYER-STRUCTURED BOLOMETER AND METHOD OF FABRICATING THE SAME - Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance. | 06-18-2009 |
20090184307 | PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge | 07-23-2009 |
20100012915 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge | 01-21-2010 |
20100094381 | APPARATUS FOR DRIVING ARTIFICIAL RETINA USING MEDIUM-RANGE WIRELESS POWER TRANSMISSION TECHNIQUE - Provided is an apparatus for driving an artificial retina using a medium-range power transmission technique. The apparatus can wirelessly transmit power to an artificial retina circuit within a medium range of about 1 m using resonance between a first coil equipped around a user's waist and a second coil implanted in a user's eye. Thus, it is possible to solve the difficulty of implanting a coil in a lens, provide convenience to a user by eliminating the necessity of artificial glasses, and stably supply power to the artificial retina circuit. In addition, it is possible to remarkably lessen the difficulty in connecting the second coil with the artificial retina circuit in an eye. | 04-15-2010 |
20100108296 | THIN COOLING DEVICE - Provided is a vapor-liquid phase change cooling device, which may be manufactured with no limitation of thickness. | 05-06-2010 |
20100108977 | NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME - A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device. | 05-06-2010 |
20100132467 | HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME - Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size. | 06-03-2010 |
20100147070 | HUMIDITY SENSOR AND METHOD OF MANUFACTURING THE SAME - Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale. | 06-17-2010 |
20100148067 | BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL - Provided are a bolometer structure, an infrared detection pixel employing the bolometer structure, and a method of fabricating the infrared detection pixel. | 06-17-2010 |
20100148821 | PROGRAMMABLE LOGIC BLOCK OF FPGA USING PHASE-CHANGE MEMORY DEVICE - Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed. | 06-17-2010 |
20100155601 | INFRARED SENSOR AND METHOD OF FABRICATING THE SAME - An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented. | 06-24-2010 |
20100243994 | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process. | 09-30-2010 |
20100258780 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured. | 10-14-2010 |
20110159669 | METHOD FOR DEPOSITING AMORPHOUS SILICON THIN FILM BY CHEMICAL VAPOR DEPOSITION - Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air. | 06-30-2011 |
20110223716 | ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME - Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed. | 09-15-2011 |
20120168761 | ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter. | 07-05-2012 |
20120225500 | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process. | 09-06-2012 |
20130302923 | METHOD FOR MANUFACTURING AN ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE - Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter. | 11-14-2013 |
20140011297 | NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region. | 01-09-2014 |
20140035621 | INVERTER, NAND GATE, AND NOR GATE - Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal. | 02-06-2014 |
20140035622 | INVERTER, NAND GATE, AND NOR GATE - Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal. | 02-06-2014 |