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Byl
Carolyn C. Byl, Atlanta, GA US
| Patent application number | Description | Published |
|---|---|---|
| 20090101671 | PUMPING DISPENSER - A device for dispensing a flowable material is disclosed. The device includes a container holding the flowable material therein and a pumping assembly attached to the container. The pumping assembly includes a pump and a placard portion configured for displaying viewable information thereon associated with the flowable material. | 04-23-2009 |
Marten Byl, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20100055517 | METHODS AND SYSTEMS OF PRODUCING HYDROGEN AND OXYGEN FOR POWER GENERATION, AND POWER SOURCE - Methods and systems of providing a source of hydrogen and oxygen with high volumetric energy density, as well as a power systems useful in non-air breathing engines such as those in, for example, submersible vehicles, is disclosed. A hydride reactor may be utilized in forming hydrogen from a metal hydride and a peroxide reactor may be utilized in forming oxygen from hydrogen peroxide. The high temperature hydrogen and oxygen may be converted to water using a solid oxide fuel cell, which serves as a power source. The power generation system may have an increased energy density in comparison to conventional batteries. Heat produced by exothermic reactions in the hydride reactor and the peroxide reactor may be transferred and utilized in other aspects of the power generation system. High temperature water produced during by the peroxide reactor may be used to fuel the hydride reactor. | 03-04-2010 |
Oleg Byl, Southbury, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20110021011 | CARBON MATERIALS FOR CARBON IMPLANTATION - A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula C | 01-27-2011 |
| 20110097882 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME - An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B | 04-28-2011 |
| 20110159671 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME - An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B | 06-30-2011 |
Oleg Byl, New Milford, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20100154835 | CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS - A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF | 06-24-2010 |