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Butcher
Kenneth Scott Alexander Butcher, Thunder Bay CA
| Patent application number | Description | Published |
|---|---|---|
| 20100210067 | MIGRATION AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - A method of producing a thin film using plasma enhanced chemical vapor deposition, including the steps of supplying a cation species to a substrate region when there is at most a relatively low flux of a plasma based anion species in the substrate region, and supplying the plasma based anion species to the substrate region when there is at most a relatively low flux of the cation species in the substrate region. This enables delivery of gaseous reactants to be separated in time in PECVD and/or RPECVD based film growth systems, which provides a significant reduction in the formation of dust particles for these plasma based film growth techniques. | 08-19-2010 |
Kenneth Scott Alexander Butcher, South Miranda AU
| Patent application number | Description | Published |
|---|---|---|
| 20090020768 | BURIED CONTACT DEVICES FOR NITRIDE-BASED FILMS AND MANUFACTURE THEREOF - A semiconductor device comprising: a substrate; a first contact; a first layer of doped semiconductor material deposited on the substrate; a semiconductor junction region deposited on the first layer; a second layer of doped semiconductor material deposited on the junction region, the second layer having opposite semiconductor doping polarity to that of the first layer; and a second contact; wherein the second contact is in electrical communication with the second layer and the first contact is embedded within the semiconductor device between the substrate and the junction region and is in electrical communication with the first layer; and processes for manufacture of an embedded contact semiconductor device. | 01-22-2009 |
Kenneth Scott Alexander Butcher, Miranda AU
| Patent application number | Description | Published |
|---|---|---|
| 20080282978 | Process For Manufacturing A Gallium Rich Gallium Nitride Film - A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when they react with each other, gallium nitride is formed; and (b) growing the gallium rich gallium nitride film from the reaction mixture, by allowing the gallium species to react with the nitrogen species and to deposit gallium nitride on a substrate selected from the group consisting of silicon, glass, sapphire, quartz and crystalline materials having a lattice constant closely matched to gallium nitride, including zinc oxide, optionally with a zinc oxide buffer layer, at a temperature of from about 480° C. to about 900° C. and in the presence of a gaseous environment in which the partial pressure of oxygen is less than 10 | 11-20-2008 |
Kenneth Scott Alexander Butcher, New South Wales AU
| Patent application number | Description | Published |
|---|---|---|
| 20080272463 | Method and Apparatus for Growing a Group (III) Metal Nitride Film and a Group (III) Metal Nitride Film - A process and apparatus for growing a group (III) metal nitride film by remote plasma enhanced chemical vapour deposition are described. The process comprises heating an object selected from the group consisting of a substrate and a substrate comprising a buffer layer in a growth chamber to a temperature in the range of from about 400° C. to o about 750° C., producing active neutral nitrogen species in a nitrogen plasma remotely located from the growth chamber and transferring the active neutral nitrogen species to the growth chamber. A reaction mixture is formed in the growth chamber, the reaction mixture containing a species of a group (III) metal that is capable of reacting with the nitrogen species so as to form a group (III) metal nitride film and a film of group (III) s metal nitride is formed on the heated object under conditions whereby the film is suitable for device purposes. Also described is a group (III) metal nitride film which exhibits an oxygen concentration below 1.6 atomic %. | 11-06-2008 |
Roland Butcher, Mt. Lawley AU
| Patent application number | Description | Published |
|---|---|---|
| 20080198279 | Electro-Optical Filter - The present invention provides an electro-optical filter for filtering light from an object. The filter is arranged for receiving the light via a first imaging element and comprises a plurality of reflective elements for receiving and reflecting the light. Each reflective element has an optical property that is dependent on an intensity of the light at or near the reflective element. The optical property controls local filtering of the light intensity in a manner such that, above a predetermined intensity threshold, the filter reduces intensity differences of light originating from bright and dark regions of the object. | 08-21-2008 |