| Patent application number | Description | Published |
| 20090316429 | LIGHT COUPLING DEVICE AND SYSTEM, AND METHOD FOR MANUFACTURING THE DEVICE AND SYSTEM - Embodiments of the disclosed technique disclose an optical device generating light by luminescence comprising a substrate, a waveguide, a pump light source and a photoluminescent layer, wherein the waveguide is positioned between the substrate and the photoluminescent layer, or the photoluminescent layer is positioned between the substrate and the waveguide. The pump light source is provided opposite to the photoluminescent layer at the backside of the substrate. The pump light source is adapted to pump the photoluminescent layer to emit light; and at least some of the emitted light is evanescently coupled into the waveguide. | 12-24-2009 |
| 20100148159 | METHOD FOR FORMING A PATTERN ON A SUBSTRATE AND ELECTRONIC DEVICE FORMED THEREBY - The invention relates to a method for forming a pattern on a substrate (S) with an upper surface and a lower surface which comprises the steps of depositing a first layer (E | 06-17-2010 |
| 20100172816 | Ammonia storage system - A system for storing ammonia comprises gas detector that is able to detect gases other than ammonia. The system further comprises thermally activatable ammonia stores, which can be activated to release ammonia upon heating. When the ammonia stores are not heated, the system is below ambient pressure and any leak will cause external gas to enter the system. Therefore, the gas detector is used to detect the presence of such external gas, which allows to detect leaks. The gas detector may be embodied as a thermal detector using a single heater and two temperature sensors for detecting a gas flow as well as external gas. | 07-08-2010 |
| 20110017981 | PROCESS FOR THE PREPARATION OF SEMICONDUCTING LAYERS - A convenient way for preparing thin layers of organic semiconducting materials comprises application or deposition of particles of a semiconducting material containing an organic semiconductor on a suitable surface, and converting these particles into a semiconducting layer on a substrate by application of pressure and optionally elevated temperatures. | 01-27-2011 |