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Buonassisi
Anthony Buonassisi, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20110073869 | METHOD TO REDUCE DISLOCATION DENSITY IN SILICON USING STRESS - A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations. | 03-31-2011 |
| 20110136348 | PHONON-ENHANCED CRYSTAL GROWTH AND LATTICE HEALING - A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice. | 06-09-2011 |
Anthony Buonassisi, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100213406 | Internal gettering by metal alloy clusters - The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described. | 08-26-2010 |
Tonio Buonassisi, Cambridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090184382 | METHOD TO REDUCE DISLOCATION DENSITY IN SILICON - A crystalline material structure is provided. The crystalline material structure includes a semiconductor structure being annealed at temperatures above the brittle-to-ductile transition temperature of the semiconductor structure, and cooled in an approximately linear time-temperature profile down to approximately its respective transition temperature T | 07-23-2009 |