Bunji
Bunji Miizuno, Nara JP
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20160064198 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes a process chamber; a process gas supply unit that supplies process gas to the process chamber; a decompressing mechanism that decompresses the process chamber; a plasma excitation device that generates plasma in the process chamber; a stage in the chamber, on which the transport carrier is loaded; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and that has a window section through which the substrate is partly exposed to plasma; a correction member that presses the frame onto the stage and corrects warpage of the frame; and a movement device that moves the correction member. The correction member is provided separately from the cover to be covered by the cover. | 03-03-2016 |
Bunji Mizino, Osaka JP
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20080210167 | IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively. | 09-04-2008 |
Bunji Mizuno, Ikoma-Shi JP
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20080196834 | LIQUID PHASE ETCHING METHOD AND LIQUID PHASE ETCHING APPARATUS - A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching. | 08-21-2008 |
20100167508 | METHOD FOR INTRODUCING IMPURITIES AND APPARATUS FOR INTRODUCING IMPURITIES - A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous. | 07-01-2010 |
20110065267 | Plasma Doping Method and Plasma Doping Apparatus - In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended. | 03-17-2011 |
20110081787 | PLASMA PROCESSING METHOD AND APPARATUS - With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface. | 04-07-2011 |
20130022759 | PLASMA PROCESSING METHOD AND APPARATUS - With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface. | 01-24-2013 |
Bunji Mizuno, Ikoma-City JP
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20100148323 | IMPURITY INTRODUCING METHOD USING OPTICAL CHARACTERISTICS TO DETERMINE ANNEALING CONDITIONS - A subject of the present invention is to realize an impurity doping not to bring about a rise of a substrate temperature. Another subject of the present invention is to measure optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized. An impurity doping method, includes a step of doping an impurity into a surface of a solid state base body, a step of measuring an optical characteristic of an area into which the impurity is doped, a step of selecting annealing conditions based on a measurement result to meet the optical characteristic of the area into which the impurity is doped, and a step of annealing the area into which the impurity is doped, based on the selected annealing conditions. | 06-17-2010 |
Bunji Nomura, Aichi-Ken JP
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20090166116 | STRUCTURE MOUNTING AN ELECTRICITY STORAGE PACK ON A VEHICLE - There are included a side member formed to support a battery pack, and a rear bracket securing the battery pack to the side member. The rear bracket has one side pivotably coupled to the battery pack, and the other side pivotably coupled to the side member. | 07-02-2009 |
Bunji Nomura, Toyota-Shi JP
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20090047812 | ATTACHING STRUCTURE OF CONNECTOR - An attaching structure of a connector for attaching a connector to an attached portion, includes: a holding unit which holds the connector at an attaching position by sliding the connector in a direction of intersecting with a superimposing direction of the connector and the attached portion to superimpose the connector on the attached portion; and a pair of holes provided at the connector and the attached portion for passing a screw member by being communicated with each other when the connector is disposed at the attaching position. | 02-19-2009 |
20140242447 | MOUNTING STRUCTURE FOR ELECTRIC STORAGE APPARATUS - A mounting structure for an electric storage apparatus includes the electric storage apparatus, a vehicle body, a first reinforce, and a second reinforce. The electric storage apparatus outputs an energy for use in running of a vehicle. The vehicle body includes a concave portion opened upward in the vehicle. The concave portion houses the electric storage apparatus. The first reinforce is disposed along a bottom face of the concave portion and extends in a predetermined direction. The second reinforce is disposed along an upper face of the electric storage apparatus and extends in the predetermined direction. | 08-28-2014 |
Bunji Uchiyama, Ebina-Shi JP
Patent application number | Description | Published |
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20080213705 | PATTERN EXPOSURE METHOD AND PATTERN EXPOSURE APPARATUS - A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm. | 09-04-2008 |
Bunji Yusumura, Tokyo JP
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20130193438 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device. | 08-01-2013 |