| Patent application number | Description | Published |
|---|
| 20080203507 | Image sensors for zoom lenses and fabricating methods thereof - An image sensor includes a semiconductor substrate on which a plurality of photo diodes are formed. A plurality of interlayer dielectrics are formed above the semiconductor substrate, and a plurality of metal lines are formed on each of the interlayer dielectrics. A plurality of micro lenses are formed above the uppermost one of the interlayer dielectrics. The light passing through the zoom lenses is incident on the respective micro lenses. The plurality metal lines formed on at least one of the plurality of interlayer dielectrics have the same width. | 08-28-2008 |
| 20090072281 | CMOS image sensor layout capable of removing difference between Gr and Gb sensitivities and method of laying out the CMOS image sensor - Provided is a layout of a CMOS image sensor having an asymmetrical pixel structure in which a plurality of photodiodes may share a transistor block. The layout may include a first region in which a plurality of photodiodes are arranged asymmetrically on a semiconductor substrate, a second region including a metal shield layer arranged on an upper surface of the first region, and a third region arranged on an upper surface of the second region. The metal shield layer may be arranged asymmetrically according to the layout of the photodiodes. | 03-19-2009 |
| 20090321617 | Color filter array, method of fabricating the same, and image pickup device including the same - An image pickup device includes a pixel array including a plurality of photo sensitive devices and a color filter array including a plurality of color filters each disposed above a corresponding one of the plurality of photo sensitive devices. The color filters include a first type color filter formed on a glass substrate to filter light to pass a first spectrum and a second type color filter stacked on at least part of the first type color filter to filter light to pass a second spectrum. Accordingly, fabrication of a color filter array can be simplified and a color filter array having a small lay out can be fabricated. | 12-31-2009 |
| 20100006968 | Image sensors and methods of manufacturing the same - Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved. | 01-14-2010 |
| 20100128149 | Color filter array, image sensor including the color filter array and system including the image sensor - A color filter array includes a plurality of white filters, a plurality of yellow filters, a plurality of cyan filters and a plurality of green filters. The plurality of white filters transmits incident light. The plurality of yellow filters transmits a green component and a red component of the incident light. The plurality of cyan filters transmits the green component and a blue component of the incident light. The plurality of green filters transmits the green component of the incident light. An image sensor including the color filter array has high sensitivity and high SNR by increasing transmittance of the incident light. | 05-27-2010 |
