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Buchholtz
Brett Buchholtz, Spokane, WA US
| Patent application number | Description | Published |
|---|---|---|
| 20110249100 | Apparatus and Method for Capturing Images - An apparatus is provided for capturing images including a base, and image capture adjustment mechanism, a first camera, and a second camera. The base is constructed and arranged to support an alignable array of cameras. The image capture adjustment mechanism is disposed relative to the base for adjusting an image capture line of sight for a camera relative to the base. The first camera is carried by the base, operably coupled with the image capture adjustment mechanism, and has an image capture device. The first camera has a line of sight defining a first field of view adjustable with the image capture adjustment mechanism relative to the base. The second camera is carried by the base and has an image capture device. The second camera has a line of sight defining a second field of view extending beyond a range of the field of view for the first camera in order to produce a field of view that is greater than the field of view provided by the first camera. A method is also provided. | 10-13-2011 |
Jochen Buchholtz, Waiblingen DE
| Patent application number | Description | Published |
|---|---|---|
| 20110179652 | Chipper chain and motor-driven chain saw having a chipper chain - The invention relates to a chipper chain ( | 07-28-2011 |
Mikael Buchholtz, Kobenhavn DK
| Patent application number | Description | Published |
|---|---|---|
| 20110246699 | MEMORY ACCESS CONTROL - An apparatus comprising: a memory having at least two sections; a security element associated with at least one of said at least two sections; and a processor for controlling access to at least one of the at least two sections of the memory in dependence on a value of the security element. The apparatus may be an integrated circuit and the memory may be a read-only-memory storing generic code in one of the sections and code specific to a mobile communication device provider in the second section. The security element may be a permanently programmed memory element programmed by the IC manufacturer. | 10-06-2011 |
Timothy C. Buchholtz, Rochester, MN US
| Patent application number | Description | Published |
|---|---|---|
| 20080205570 | Unlock Mode in Source Synchronous Receivers - A phase locked loop generates an output corresponding to a source synchronous input and an input link clock signal. A phase locking feedback system receives the input and an input link clock signal and detects phase deviations between the output and the input. The phase locking feedback system also adjusts an adjusted clock signal based on the phase deviations thereby causing the phase locking feedback system to generate the output so that the output has a steady phase relationship with the input. A first mechanism causes the phase locking feedback system not to track phase deviations between the output and the input upon occurrence of a first predefined event, thereby maintaining the adjusted clock signal at a current state. | 08-28-2008 |
Timothy Clyde Buchholtz, Rochester, MN US
| Patent application number | Description | Published |
|---|---|---|
| 20080240320 | TRANSMIT CLOCK GENERATOR - A transmit clock generator includes a first local clock generator and a second local clock generator, each receiving an external PLL clock signal and respectively generating first and second divided clock signals. A synchronization signal is applied to the first local clock generator and second local clock generator during a clock training period to enforce a phase relationship between the first and second divided clock signals. The synchronization signal includes at least one synchronization pulse that is applied to the first local clock generator and second local clock generator during the clock training period. | 10-02-2008 |
Walter Scott Buchholtz, Austin, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20080299351 | Non-wood building materials with simulated wood-grain surface appearance - A non-wood building material having a simulated wood-grain appearance of a target natural wood comprising a body defined by an outer surface, the body being formed from a composite material comprising a first amount of a matrix component and a second amount of a filler component; and a third amount of a coloring agent deposited on the outer surface of the body; the outer surface of the body comprising a plurality of grooves configured to (1) expose filler component along the surface of the grooves, and (2) simulate the texture of the target natural wood along the outer surface of the body, the grooves defining an exposed surface of the body; wherein the filler component is present in an amount effective to absorb the coloring agent on the exposed surface in an amount effective for the body to simulate the color of the target natural wood. | 12-04-2008 |
Wolfgang Buchholtz, Radebeul DE
| Patent application number | Description | Published |
|---|---|---|
| 20100187635 | SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBEDDED SI/GE MATERIAL FOR CREATING TENSILE AND COMPRESSIVE STRAIN - By forming a substantially continuous and uniform semiconductor alloy in one active region while patterning the semiconductor alloy in a second active region so as to provide a base semiconductor material in a central portion thereof, different types of strain may be induced, while, after providing a corresponding cover layer of the base semiconductor material, well-established process techniques for forming the gate dielectric may be used. In some illustrative embodiments, a substantially self-aligned process is provided in which the gate electrode may be formed on the basis of layer, which has also been used for defining the central portion of the base semiconductor material of one of the active regions. Hence, by using a single semiconductor alloy, the performance of transistors of different conductivity types may be individually enhanced. | 07-29-2010 |
| 20100243903 | METHOD AND SYSTEM FOR MATERIAL CHARACTERIZATION IN SEMICONDUCTOR PRODUCTION PROCESSES BASED ON FTIR WITH VARIABLE ANGLE OF INCIDENCE - During the processing of complex semiconductor devices, dielectric material systems comprising a patterned structure may be analyzed in a non-destructive manner by using an FTIR technique in combination with a plurality of angles of incidence. In this manner, topography-related information may be obtained and/or data analysis may be made more efficient due to the increased amount of information obtained by the plurality of angles of incidence. | 09-30-2010 |
| 20110104878 | SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBEDDED SI/GE MATERIAL FOR CREATING TENSILE AND COMPRESSIVE STRAIN - By forming a substantially continuous and uniform semiconductor alloy in one active region while patterning the semiconductor alloy in a second active region so as to provide a base semiconductor material in a central portion thereof, different types of strain may be induced, while, after providing a corresponding cover layer of the base semiconductor material, well-established process techniques for forming the gate dielectric may be used. In some illustrative embodiments, a substantially self-aligned process is provided in which the gate electrode may be formed on the basis of layer, which has also been used for defining the central portion of the base semiconductor material of one of the active regions. Hence, by using a single semiconductor alloy, the performance of transistors of different conductivity types may be individually enhanced. | 05-05-2011 |