| Patent application number | Description | Published |
|---|
| 20080248251 | SEMICONDUCTOR SUBSTRATES HAVING USEFUL AND TRANSFER LAYERS - A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications. | 10-09-2008 |
| 20080265261 | PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL - Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer. | 10-30-2008 |
| 20080293185 | SEMICONDUCTOR SUBSTRATES HAVING USEFUL AND TRANSFER LAYERS - A method of fabricating composite substrates by associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer layer having a free surface; providing a sample carrier having a surface and a recess that has a depth that is approximate the same as the predetermined thickness of the intermediate substrate so that the transfer layer free surface is positioned flush with the sample carrier surface; providing a support layer both on the transfer layer free surface and on a portion of the sample carrier surface surrounding the recess; removing the portion of the support layer that extends beyond the intermediate substrate; and detaching the transfer layer and support layer from its intermediate support to form the composite substrate. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications. | 11-27-2008 |
| 20080293217 | SEMICONDUCTOR SUBSTRATES HAVING USEFUL AND TRANSFER LAYERS - A method of fabricating composite substrates by associating a plurality of transfer layers in spaced relation upon a single intermediate support; providing a support layer on each transfer layer to form a composite substrate; and detaching the composite substrates from the intermediate support. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications. | 11-27-2008 |
| 20090289332 | METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM - A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition. | 11-26-2009 |
| 20100314628 | PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL - Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer. | 12-16-2010 |
| 20110039368 | METHODS FOR MAKING SUBSTRATES AND SUBSTRATES FORMED THEREFROM - A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving substrate and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition. | 02-17-2011 |
| 20110171812 | FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL - The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate. | 07-14-2011 |
| Patent application number | Description | Published |
|---|
| 20080210975 | METHOD OF FABRICATING HETEROEPITAXIAL MICROSTRUCTURES - An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method. | 09-04-2008 |
| 20090325362 | METHOD OF RECYCLING AN EPITAXIED DONOR WAFER - A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer. | 12-31-2009 |
| 20100167500 | METHOD OF RECYCLING AN EPITAXIED DONOR WAFER - A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer. | 07-01-2010 |
| 20100210090 | FORMING STRUCTURES THAT INCLUDE A RELAXED OR PSEUDO-RELAXED LAYER ON A SUBSTRATE - A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure. | 08-19-2010 |
| 20110217825 | FORMING STRUCTURES THAT INCLUDE A RELAXED OR PSEUDO-RELAXED LAYER ON A SUBSTRATE - A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure. | 09-08-2011 |
