| Patent application number | Description | Published |
|---|
| 20080206589 | Low tempertature sintering using Sn2+ containing inorganic materials to hermetically seal a device - A method for inhibiting oxygen and moisture degradation of a device (e.g., an OLED device) and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a Sn | 08-28-2008 |
| 20080207424 | Bismuth-containing glass, glass-ceramic, articles and fabrication process - Bi-containing glass-ceramic material, especially those containing β-quartz and/or β-spodumene solid solutions as the predominant crystalline phase, and the precursor glass material as well as process of making such glass-ceramic material and articles. The glass-ceramic can be made to have a dark color, and essentially to be free of V | 08-28-2008 |
| 20090121333 | Flexible substrates having a thin-film barrier - Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature. | 05-14-2009 |
| 20090270241 | Ga-P-S glass compositions - Ga—P—S glass compositions that may have application in infrared (IR) windows, waveguiding fibers, or as host glasses for luminescent dopants are described. | 10-29-2009 |
| 20090324830 | TIN PHOSPHATE BARRIER FILM, METHOD, AND APPARATUS - A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer. | 12-31-2009 |
| 20100055493 | Phase Change Memory Materials - Phase change memory materials and more particularly GeAs telluride materials useful for phase change memory applications, for example, optical and electronic data storage are described. | 03-04-2010 |
| 20100084016 | Intermediate Thermal Expansion Coefficient Glass - Aluminoborosilicate glasses which may be useful in photovoltaic, photochromic, electrochromic, or Organic Light Emitting Diode (OLED) lighting applications are described. | 04-08-2010 |
| 20100111487 | Phosphate Glasses Suitable for Neutron Detection and Fibers Utilizing Such Glasses - A phosphate glass comprising: (i) 45 to 75 mole % P | 05-06-2010 |
| 20100190051 | BARRIER LAYER FOR THIN FILM BATTERY - A thin film battery comprises a substrate, anode and cathode current collector layers formed over the substrate, anode and cathode layers formed over and in electrical contact with respective ones of the current collector layers, and an electrolyte layer formed between the anode and cathode layers. The thin film battery further comprises a barrier layer formed from a material such as tin oxide, tin phosphate, tin fluorophosphate, chalcogenide glass, tellurite glass or borate glass. The barrier layer is configured to encapsulate the thin film battery layers and substantially inhibit or prevent exposure of the thin film battery layers to air or moisture. | 07-29-2010 |
| 20100193353 | SEALING TECHNIQUE FOR DECREASING THE TIME IT TAKES TO HERMETICALLY SEAL A DEVICE AND THE RESULTING HERMETICALLY SEALED DEVICE - A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn | 08-05-2010 |
| 20100222197 | TRANSITION METAL DOPED SN PHOSPHATE GLASS - Transition metal doped Sn phosphate glass compositions and methods of making transition metal doped Sn phosphate glass compositions are described which can be used for example, in sealing applications. | 09-02-2010 |
| 20100300535 | FUSION FORMABLE SODIUM CONTAINING GLASS - Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≦540° C., thermal expansion coefficient of from 6.5 to 9.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 12-02-2010 |
| 20100300536 | FUSION FORMABLE SODIUM FREE GLASS - A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points≧540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 12-02-2010 |
| 20110017297 | FUSION FORMABLE SILICA AND SODIUM CONTAINING GLASSES - Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points≧535° C., for example, ≧570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 01-27-2011 |
| 20110020587 | HERMETICALLY SEALING A DEVICE WITHOUT A HEAT TREATING STEP AND THE RESULTING HERMETICALLY SEALED DEVICE - A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn | 01-27-2011 |
