Patent application number | Description | Published |
20080206589 | Low tempertature sintering using Sn2+ containing inorganic materials to hermetically seal a device - A method for inhibiting oxygen and moisture degradation of a device (e.g., an OLED device) and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a Sn | 08-28-2008 |
20080207424 | Bismuth-containing glass, glass-ceramic, articles and fabrication process - Bi-containing glass-ceramic material, especially those containing β-quartz and/or β-spodumene solid solutions as the predominant crystalline phase, and the precursor glass material as well as process of making such glass-ceramic material and articles. The glass-ceramic can be made to have a dark color, and essentially to be free of V | 08-28-2008 |
20090121333 | Flexible substrates having a thin-film barrier - Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature. | 05-14-2009 |
20090270241 | Ga-P-S glass compositions - Ga—P—S glass compositions that may have application in infrared (IR) windows, waveguiding fibers, or as host glasses for luminescent dopants are described. | 10-29-2009 |
20090324830 | TIN PHOSPHATE BARRIER FILM, METHOD, AND APPARATUS - A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer. | 12-31-2009 |
20100055493 | Phase Change Memory Materials - Phase change memory materials and more particularly GeAs telluride materials useful for phase change memory applications, for example, optical and electronic data storage are described. | 03-04-2010 |
20100084016 | Intermediate Thermal Expansion Coefficient Glass - Aluminoborosilicate glasses which may be useful in photovoltaic, photochromic, electrochromic, or Organic Light Emitting Diode (OLED) lighting applications are described. | 04-08-2010 |
20100111487 | Phosphate Glasses Suitable for Neutron Detection and Fibers Utilizing Such Glasses - A phosphate glass comprising: (i) 45 to 75 mole % P | 05-06-2010 |
20100190051 | BARRIER LAYER FOR THIN FILM BATTERY - A thin film battery comprises a substrate, anode and cathode current collector layers formed over the substrate, anode and cathode layers formed over and in electrical contact with respective ones of the current collector layers, and an electrolyte layer formed between the anode and cathode layers. The thin film battery further comprises a barrier layer formed from a material such as tin oxide, tin phosphate, tin fluorophosphate, chalcogenide glass, tellurite glass or borate glass. The barrier layer is configured to encapsulate the thin film battery layers and substantially inhibit or prevent exposure of the thin film battery layers to air or moisture. | 07-29-2010 |
20100193353 | SEALING TECHNIQUE FOR DECREASING THE TIME IT TAKES TO HERMETICALLY SEAL A DEVICE AND THE RESULTING HERMETICALLY SEALED DEVICE - A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn | 08-05-2010 |
20100222197 | TRANSITION METAL DOPED SN PHOSPHATE GLASS - Transition metal doped Sn phosphate glass compositions and methods of making transition metal doped Sn phosphate glass compositions are described which can be used for example, in sealing applications. | 09-02-2010 |
20100300535 | FUSION FORMABLE SODIUM CONTAINING GLASS - Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≦540° C., thermal expansion coefficient of from 6.5 to 9.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 12-02-2010 |
20100300536 | FUSION FORMABLE SODIUM FREE GLASS - A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points≧540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 12-02-2010 |
20110017297 | FUSION FORMABLE SILICA AND SODIUM CONTAINING GLASSES - Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points≧535° C., for example, ≧570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 01-27-2011 |
20110020587 | HERMETICALLY SEALING A DEVICE WITHOUT A HEAT TREATING STEP AND THE RESULTING HERMETICALLY SEALED DEVICE - A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn | 01-27-2011 |
20120045567 | FLEXIBLE SUBSTRATES HAVING A THIN-FILM BARRIER - Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature. | 02-23-2012 |
20120132282 | ALKALI-FREE HIGH STRAIN POINT GLASS - A compositional range of high strain point alkali metal free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≧570° C., thermal expansion coefficient of from 5 to 9 ppm/° C. | 05-31-2012 |
20120135850 | PERGALLOUS ALKALINE EARTH SELENOGERMANATE GLASSES - IR-transmitting alkaline earth selenogallo- and/or selenoindo-germanate glasses that are capable of hosting luminescent rare earth dopants. The relatively high Ga and/or In content of most compositions serves to eliminate the typical clustering tendency of rare earth dopants in chalcogenide glasses, resulting in improved luminescence. | 05-31-2012 |
20120247525 | TUNGSTEN-TITANIUM-PHOSPHATE MATERIALS AND METHODS FOR MAKING AND USING THE SAME - Tungsten-titanium-phosphate materials and methods of making and using the same. The Tungsten-titanium-phosphate materials comprise about 20 to 60 actual mol % WO | 10-04-2012 |
20130037105 | FUSION FORMABLE ALKALI-FREE INTERMEDIATE THERMAL EXPANSION COEFFICIENT GLASS - A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points ≧600° C., thermal expansion coefficient of from 35 to 50×10 | 02-14-2013 |
20130137010 | REACTIVE SINTERING OF CERAMIC LITHIUM-ION SOLID ELECTROLYTES - A method of forming a solid, dense, hermetic lithium-ion electrolyte membrane comprises combing an amorphous, glassy, or low melting temperature solid reactant with a refractory oxide reactant to form a mixture, casting the mixture to form a green body, and sintering the green body to form a solid membrane. The resulting electrolyte membranes can be incorporated into lithium-ion batteries. | 05-30-2013 |
20130240351 | SPUTTERING TARGETS AND ASSOCIATED SPUTTERING METHODS FOR FORMING HERMETIC BARRIER LAYERS - A sputtering target comprises a low T | 09-19-2013 |
20130255779 | INTERMEDIATE THERMAL EXPANSION COEFFICIENT GLASS - CTE-matched silicate glasses and more particularly to low-alkali CTE-matched silicate glasses that are useful in semiconductor-based applications, such as photovoltaics are described along with methods of making such glasses. | 10-03-2013 |
20130256598 | BISMUTH BORATE GLASS ENCAPSULANT FOR LED PHOSPHORS - Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices. | 10-03-2013 |
20140120315 | FLEXIBLE MULTILAYER HERMETIC LAMINATE - A multi-layer thin film laminate comprises a dyad layer including a barrier layer and a decoupling layer formed over a substrate. The barrier layer comprises a hermetic glass material selected from the group consisting of tin fluorophosphate glasses, tungsten-doped tin fluorophosphate glasses, chalcogenide glasses, tellurite glasses, borate glasses and phosphate glasses and the decoupling layer comprises a polymer material. | 05-01-2014 |
20140150867 | Fusion Formable Silica and Sodium Containing Glasses - Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≧535° C., for example, ≧570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process. | 06-05-2014 |
20140158201 | PHOTOVOLTAIC MODULE PACKAGE - A silicon wafer-based photovoltaic module is described, which includes a first outer protective layer and a second outer protective layer, wherein both outer protective layers comprise a low- or no-sodium glass or low- or no-alkali compositions. The photovoltaic modules show resistance to water ingress, no or reduced potential-induced sodium ion drift, and reduced potential induced degradation. | 06-12-2014 |
20140234542 | METHOD FOR INHIBITING OXYGEN AND MOISTURE DEGRADATION OF A DEVICE AND THE RESULTING DEVICE - A method for inhibiting oxygen and moisture degradation of a device and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a low liquidus temperature (LLT) material which typically has a low low liquidus temperature (or in specific embodiments a low glass transition temperature) is used to form a barrier layer on the device. The LLT material can be, for example, tin fluorophosphate glass, chalcogenide glass, tellurite glass and borate glass. The LLT material can be deposited onto the device by, for example, sputtering, evaporation, laser-ablation, spraying, pouring, frit-deposition, vapor-deposition, dip-coating, painting or rolling, spin-coating or any combination thereof. Defects in the LLT material from the deposition step can be removed by a consolidation step (heat treatment), to produce a pore-free, gas and moisture impenetrable protective coating on the device. Although many of the deposition methods are possible with common glasses (i.e. high melting temperature glasses like borate silicate, silica, etc.), the consolidation step is only practical with the LLT material where the consolidation temperature is sufficiently low so as to not damage the inner layers in the device. | 08-21-2014 |
20140238481 | SODIUM OUT-FLUX FOR PHOTOVOLTAIC CIGS GLASSES - Photovoltaic devices where glass substrates have a composition where (RO+M | 08-28-2014 |
20140323286 | PHOTOVOLTAIC MODULE PACKAGE - Fusion-formable sodium-containing aluminosilicate and boroaluminosilicate glasses are described. The glasses are particularly useful for controlled release of sodium—useful in semiconductor applications, such as thin film photovoltaics where the sodium required to optimize cell efficiency is to be derived from the substrate glass. | 10-30-2014 |
20150038314 | CHALCOGENIDE GLASS - Boron-containing network sulfide glass which may be useful in IR transmitting applications, such as IR optics, laser or fiber amplifiers doped with rare earths with emission in the near IR, and methods of making the same. | 02-05-2015 |
20150064576 | LITHIUM ORTHOPHOSPHATE GLASSES, CORRESPONDING GLASS-CERAMICS AND LITHIUM ION-CONDUCTING NZP GLASS CERAMICS - A lithium-ion conductive glass-ceramic article has a crystalline component characterized by the formula MA | 03-05-2015 |