| Patent application number | Description | Published |
|---|
| 20080292906 | Enhancement of Magnetic Media Recording Performance Using Ion Irradiation to Tailor Exchange Coupling - Magnetic medium recording performance can be enhanced by irradiating a magnetic medium with ions having an acceleration voltage of between 10 keV and 100 keV to induce exchange coupling between grains of the magnetic medium. The magnetic medium is exposed to a cumulative ion dosage of between 10 | 11-27-2008 |
| 20090116310 | METHOD AND APPARATUS FOR WRITE ENABLE AND INHIBIT FOR HIGH DENSITY SPIN TORQUE THREE DIMENSIONAL (3D) MEMORY ARRAYS - A method and apparatus for write enable and write inhibit for high density spin torque three dimensional ( | 05-07-2009 |
| 20090258186 | WAFER-LEVEL METHOD FOR FABRICATING AN OPTICAL CHANNEL AND APERTURE STRUCTURE IN MAGNETIC RECORDING HEAD SLIDERS FOR USE IN THERMALLY-ASSISTED RECORDING (TAR) - A process for forming a plurality of sliders for use in thermally-assisted recording (TAR) disk drives includes a wafer-level process for forming a plurality of aperture structures, and optionally abutting optical channels, on a wafer surface prior to cutting the wafer into individual sliders. The wafer has a generally planar surface arranged into a plurality of rectangularly-shaped regions. In each rectangular region a first metal layer is deposited on the wafer surface, followed by a layer of radiation-transmissive aperture material, which is then lithographically patterned to define the width of the aperture, the aperture width being parallel to the length of the rectangularly-shaped region. A second metal layer is deposited over the patterned layer of aperture material. The resulting structure is then lithographically patterned to define an aperture structure comprising aperture material surrounded by metal and having parallel radiation entrance and exit faces orthogonal to the wafer surface. | 10-15-2009 |
| 20090317923 | SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT - A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits. | 12-24-2009 |
| 20100118585 | HIGH DENSITY SPIN TORQUE THREE DIMENSIONAL (3D) MEMORY ARRAYS ADDRESSED WITH MICROWAVE CURRENT - One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer. | 05-13-2010 |
| 20100165801 | SYSTEM, METHOD AND APPARATUS FOR INTERNAL POLARIZATION ROTATION FOR HORIZONTAL CAVITY, SURFACE EMITTING LASER BEAM FOR THERMALLY ASSISTED RECORDING IN DISK DRIVE - A horizontal cavity, surface emitting laser (HCSEL) with internal polarization rotation is used in thermally assisted recording in hard disk drives. The desired polarization of the laser is accomplished with two beam reflections off of facets within the diode. The facets are formed in a single ion beam etching step. This device can be used in a thermally assisted recording head to produce polarization incident on the disk aligned with the direction of the tracks on the disk. | 07-01-2010 |
| 20110147866 | SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT - A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure. | 06-23-2011 |
