| Patent application number | Description | Published |
|---|
| 20090128963 | NARROW TRACK EXTRAORDINARY MAGNETO RESISTIVE [EMR] DEVICE WITH WIDE VOLTAGE TABS AND DIAD LEAD STRUCTURE - A Lorenz magnetoresistive sensor having a pair of voltage leads and a pair of current leads. The voltage leads are located at either side of one of the current leads and are separated by a distance that is substantially equal to the length of a bit to be measured. The Lorenz magnetoresistive sensor can be, for example an extraordinary magnetoresistive sensor having a quantum well structure such as a two dimensional electron gas and a shunt structure formed on an edge of the quantum well structure opposite the voltage and current leads. | 05-21-2009 |
| 20090190269 | SELF-ALIGNED COPLANAR STRUCTURE FOR NARROW-TRACK EMR DEVICES AND A METHOD FOR PRODUCING THE SAME - An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads. | 07-30-2009 |
| 20090195939 | OPTIMIZATION OF TWO DIMENSIONAL ELECTRON GAS STRUCTURES FOR MAGNETIC RECORDING SENSORS - A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene. | 08-06-2009 |
| 20090218563 | NOVEL FABRICATION OF SEMICONDUCTOR QUANTUM WELL HETEROSTRUCTURE DEVICES - A device employing a quantum well structure having a pattern that is defined by a photolithographically patterned top gate electrode. By defining the active area of the quantum well structure by the patterning of the top gate electrode there is no need to pattern the quantum well structure itself, such as by etching or other processes. This advantageously allows the active are of the quantum well structure to be patterned to a very small size, without the damaging edge effects associated with the patterning of the quantum well structure itself. | 09-03-2009 |
| 20100165511 | SLIDER WITH INTEGRATED WRITER AND SEMICONDUCTOR HETEROSTUCTURE READ SENSOR - A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge. | 07-01-2010 |
| 20100165518 | ENHANCED MAGNETORESISTANCE AND LOCALIZED SENSITIVITY BY GATING IN LORENTZ MAGNETORESISTORS - A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor. | 07-01-2010 |
| 20100296202 | THREE-TERMINAL DESIGN FOR SPIN ACCUMULATION MAGNETIC SENSOR - A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source. | 11-25-2010 |
| 20100328799 | Spin Torque Oscillator Sensor - A spin torque oscillation magnetoresistive sensor for measuring a magnetic field. The sensor uses a change in precessional oscillation frequency of a magnetization of a magnetic layer to determine the magnitude of a magnetic field. The sensor can include a magnetic free layer, a magnetic pinned layer and a non-magnetic layer sandwiched therebetween. Circuitry is connected with these layers to induce an electrical current through the layers. Spin polarization of electrons traveling through the device causes a spin torque induced precession of the magnetization of one or more of the layers. The frequency of this oscillation modulates in response to a magnetic field. The modulation of the oscillation frequency can be measured to detect the presence of the magnetic field, and determine its magnitude. | 12-30-2010 |
| 20110037464 | TUNABLE GRAPHENE MAGNETIC FIELD SENSOR - A magnetic field sensor employing a graphene sense layer, wherein the Lorentz force acting on charge carriers traveling through the sense layer causes a change in path of charge carriers traveling through the graphene layer. This change in path can be detected indicating the presence of a magnetic field. The sensor includes one or more gate electrodes that are separated from the graphene layer by a non-magnetic, electrically insulating material. The application of a gate voltage to the gate electrode alters the electrical resistance of the graphene layer and can be used to control the sensitivity and speed of the sensor. | 02-17-2011 |
| 20110090594 | DEVICE FOR GENERATING HIGH FREQUENCY MAGNETIC FIELDS IN A REST-FRAME OF A MAGNETIC MEDIUM - A magnetic head having a magnetic wiggler structure for initiating a high frequency magnetic oscillation in a magnetic to improve media-writeability and increase data density. The wiggler structure includes a plurality of magnetic layers that are antiparallel coupled with one another across non-magnetic antiparallel coupling layers. The wiggler structure is arranged just up-track from the point of data writing so that the high frequency oscillation is initiated just prior to the writing of data on the magnetic media. | 04-21-2011 |
