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Bron

Alphonse Bron, Bassecourt CH

Patent application numberDescriptionPublished
20090257322SHOCK ABSORBER FOR THE OSCILLATING WEIGHT OF A TIMEPIECE - The oscillating weight (10-15-2009
20100027381TIMEPIECE DISPLAYING THE CURRENT TIME AND INCLUDING AT LEAST FIRST AND SECOND DEVICES DISPLAYING A TIME-RELATED QUANTITY - Timepiece displaying the current time and including at least first and second display devices for a time-related quantity, the first and second display devices each being driven by a drive mechanism including a drive wheel (02-04-2010
20100226216UNCOUPLING DEVICE FOR A TIMEPIECE MECHANISM AND A WATCH MOVEMENT COMPRISING THE SAME - The invention concerns a vertical type uncoupling device, in particular in an automatic watch winding mechanism that includes an oscillating mass and a gear train connecting the oscillating mass to a barrel (09-09-2010

Patent applications by Alphonse Bron, Bassecourt CH

Johan Bron, Drachten NL

Patent application numberDescriptionPublished
20090071009 SHAVING UNIT WITH HAIR GUIDES - A shaving unit has at least one cutter (03-19-2009
20100175258SHAVING APPARATUS, A CUTTING UNIT AND A SHAVING HEAD - A shaving apparatus having at least one cutting unit (07-15-2010

Michael Bron, Halle (saale) DE

Patent application numberDescriptionPublished
20110139629ELECTRODE MATERIAL, ELECTRODE, AND METHOD FOR HYDROGEN CHLORIDE ELECTROLYSIS - An electrode material, an electrode and a process for hydrogen chloride electrolysis based on platinum metal as catalyst, in which the electrode material has a nanosize mixture of platinum particles and silver particles, is described.06-16-2011

Michel Bron, Lausanne CH

Patent application numberDescriptionPublished
20080205114Semiconductor memory device and method of operating same - There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory device and technique of reading data from and writing data into memory cells of the memory device. In this regard, in one embodiment of this aspect of the invention, the memory device and technique for operating that device that minimizes, reduces and/or eliminates the debilitating affects of the charge pumping phenomenon. This embodiment of the present invention employs control signals that minimize, reduce and/or eliminate transitions of the amplitudes and/or polarities. In another embodiment, the present invention is a semiconductor memory device including a memory array comprising a plurality of semiconductor dynamic random access memory cells arranged in a matrix of rows and columns. Each semiconductor dynamic random access memory cell includes a transistor having a source region, a drain region, a electrically floating body region disposed between and adjacent to the source region and the drain region, and a gate spaced apart from, and capacitively coupled to, the body region. Each transistor includes a first state representative of a first charge in the body region, and a second data state representative of a second charge in the body region. Further, each row of semiconductor dynamic random access memory cells includes an associated source line which is connected to only the semiconductor dynamic random access memory cells of the associated row.08-28-2008
20090231898Integrated Circuit Including Memory Array Having a Segmented Bit Line Architecture and Method of Controlling and/or Operating Same - An integrated circuit device (e.g., a logic device or a memory device) having a memory cell array including a plurality of bit lines (e.g., first and second bit lines) and a plurality of bit line segments (e.g., first and second bit line segments) wherein each bit line segment is selectively and responsively coupled to or decoupled from its associated bit line via an associated isolation circuit. The memory cell array further includes a plurality of memory cells, wherein each memory cell includes a transistor having a first region, a second region, a body region, and a gate coupled to an associated word line via an associated word line segment. A first group of memory cells is coupled to the first bit line via the first bit line segment and a second group of memory cells is coupled to the second bit line via the second bit line segment. A plurality of isolation circuits, disposed between each bit line segment and its associated bit line, to responsively couple the associated bit line segment to or disconnect the associated bit line segment from the associated bit line.09-17-2009

Patent applications by Michel Bron, Lausanne CH

Paul Bron, Grave NL

Patent application numberDescriptionPublished
20110073946LDMOS TRANSISTOR - An LDMOS transistor (03-31-2011
20110121389LDMOS HAVING A FIELD PLATE - Laterally diffused metal oxide semiconductor transistor for a radio frequency-power: amplifier comprising a drain finger (05-26-2011

Peter Allard Bron, Wageningen NL

Patent application numberDescriptionPublished
20090214476Novel mannose-specific adhesins and their use - The present invention relates to novel mannose-specific adhesins, and variants thereof, as well as nucleic acid sequences encoding these. The invention also relates to host cells expressing nucleic acids encoding the mannose-specific adhesins or variants thereof, as well as to pharmaceutical or nutraceutical compositions comprising the mannose-specific adhesins and/or host cells expressing the adhesins, and their use in treating or preventing bacterial infection. Further, screening methods suitable for identifying bacteria strains with probiotic properties are provided.08-27-2009

Samuel Bron, Rehovot IL

Patent application numberDescriptionPublished
20080237555Scorch prevention in flexible polyurethane foams - Compositions are provided for alleviating or preventing discoloration, known as “scorching”, in flame-retarded flexible polyurethane foams. The anti-scorch compositions contain combinations of antioxidant agents, epoxy compounds, organic phosphites—alone or in combination with metal salts of carboxylic acids. The compositions are useful, for example, for polyurethane foams retarded with aliphatic or aromatic phosphorus-based flame retardants, or with halogen-containing flame retardants.10-02-2008

Sierd Bron, Haren NL

Patent application numberDescriptionPublished
20080248525Twin-Arginine translocation in bacillus - Described herein are methods to enhance protein secretion in a host cell. In preferred embodiment, the host cell is a gram-positive microorganism such as a 10-09-2008
20090093025Twin-arginine translocation in Bacillus - Described herein are methods to enhance protein secretion in a host cell. In preferred embodiment, the host cell is a gram-positive microorganism such as a 04-09-2009

Patent applications by Sierd Bron, Haren NL