Brochu, Jr.
David G. Brochu, Jr., East Hardwick, VT US
Patent application number | Description | Published |
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20120187974 | Dual Stage Voltage Ramp Stress Test for Gate Dielectrics - A testing system for testing the integrity of a gate dielectric includes a testing apparatus, the testing apparatus including a test probe configured to contact and provide a voltage across the gate dielectric and to measure a current passing through the gate dielectric. The testing system also includes a computing device coupled to the testing apparatus an causing the testing apparatus to apply a constant voltage as part of a first test to the gate dielectric through the test probe until a first predetermined current is measured passing through the gate dielectric and to apply an increasing voltage to the gate dielectric after the first predetermined current is measured. | 07-26-2012 |
20130147562 | MEASURING BIAS TEMPERATURE INSTABILITY INDUCED RING OSCILLATOR FREQUENCY DEGRADATION - A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in the ring oscillator. The initial voltage is approximately one-half the stressing voltage. The stressing voltage creates operating-level stress within the ring oscillator. The method measures the operating-level frequency within the ring oscillator using an oscilloscope (after stepping up to the stressing voltage). | 06-13-2013 |
20150014771 | DUAL L-SHAPED DRIFT REGIONS IN AN LDMOS DEVICE AND METHOD OF MAKING THE SAME - A semiconductor device comprising dual L-shaped drift regions in a lateral diffused metal oxide semiconductor (LDMOS) and a method of making the same. The LDMOS in the semiconductor device comprises a trench isolation region or a deep trench encapsulated by a liner, a first L-shaped drift region, and a second L-shaped drift region. The LDMOS comprising the dual L-shape drift regions is integrated with silicon-germanium (SiGe) technology. The LDMOS comprising the dual L-shape drift regions furnishes a much higher voltage drop in a lateral direction within a much shorter distance from a drain region than the traditional LDMOS does. | 01-15-2015 |
David G. Brochu, Jr., Hardwick, VT US
Patent application number | Description | Published |
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20130038334 | TEST STRUCTURE, METHOD AND CIRCUIT FOR SIMULTANEOUSLY TESTING TIME DEPENDENT DIELECTRIC BREAKDOWN AND ELECTROMIGRATION OR STRESS MIGRATION - Test structures for simultaneously testing for electromigration or stress migration fails and time dependent dielectric breakdown fails in integrated circuits, test circuits using four test structures arranged as a bridge balance circuit and methods of testing using the test circuits. The electromigration or stress migration portions of the test structures include via chains of wire segments connected in series by electrically conductive vias, the wire segments formed in at least two adjacent wiring levels of an integrated circuit. The time dependent dielectric breakdown portions of the test structures include digitized wire structures in one of the at least two adjacent wiring levels adjacent to a less than whole portion of the wire segments in the same wiring level as the digitized wire structures. | 02-14-2013 |
Michael W. Brochu, Jr., Coral Springs, FL US
Patent application number | Description | Published |
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20130143309 | DIAGNOSTIC INSTRUMENT AND FLOW PROCESS - A diagnostic instrument having a cellular analysis system capable of running standardized immune monitoring panels. The system could include an automated and integrated specimen sampling method through a continuous flow process. The instrument could include a probe washer station, scheduler, cassette autoloader, bar coding system, and/or containment area common interface. An improved optimization test is proposed for instrument and flow cytometer quality assurance. The proposed method analyzes population separation for measuring instrument performance and/or sample quality. Such a method may also use population separation for measuring sample and/or run quality. | 06-06-2013 |