Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Brierley
Harold Milton Brierley, Dallas, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100114666 | METHOD AND SYSTEM FOR SCREENING AND EVALUATION OF RESEARCH PANEL MEMBERS - System and method for optimizing composition of a pool from which members are selected to serve on market research panels are described. In one embodiment, the system includes a database comprising a plurality of member profiles and survey data associated with the members and a datamart for periodically scanning the database to discover events and subsequently logging each of the discovered events in an event log. The system further includes an offense module for periodically evaluating the event log to determine whether one of the discovered events comprises an offense committed by one of the members and logging the offense in an offense log and an audit module for performing an audit of the one of the members and logging results of the audit in an audit log. | 05-06-2010 |
Sean Paul Brierley, Houston, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100063901 | Oilfield Inventory control and Communication System - Methods and apparatuses for providing inventory visibility and on site material control to support services provided at a well site are disclosed. A system for communicating inventory information is provided. The system includes a mobile storage unit and a load cell coupled to the mobile storage unit. The load cell generates an electric signal representing the amount of materials in the mobile storage unit. A command center is communicatively coupled to the load cell. The command center receives a signal from the load cell representing the amount of materials in the mobile storage unit. | 03-11-2010 |
Steven K. Brierley, Westford, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20100219452 | GaN HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) STRUCTURES - A GaN HEMT structure having: a first III-N layer on GaN; a source electrode in contact with a first surface portion the first III-N layer disposed over a first region in the GaN layer; a drain electrode in contact with a second surface portion of the first III-N layer disposed over a second region in the GaN layer; a gate electrode disposed over a third surface portion of the first III-N layer, such third surface portion being disposed over a third region in the GaN layer. The GaN layer has: a fourth region therein disposed between the first region therein and the third region; and a fifth region therein disposed between the third region therein and the second region therein. A second III-N layer is disposed over the first III-N layer for generating a two-dimensional electron gas density in the GaN density in at least one of the fourth region and fifth region greater than the density in the third region of the GaN layer. | 09-02-2010 |
| 20110049581 | SEMICONDUCTOR STRUCTURE AND METHOD - A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the structure with the material on the lower using a second deposition process to provide the upper layer with a second etch rate to the predetermined etchant higher than the first etch rate; and applying the predetermined etchant to upper layer to selectively remove the upper while leaving the lower layer. | 03-03-2011 |