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Briere
Alain Briere, Valleyfield CA
| Patent application number | Description | Published |
|---|---|---|
| 20090205573 | ANIMAL FEEDER - An animal feeder has a container for being filled with animal feed which is pushed by a platform toward an open end of the container. The open end of the container is very large and thus is not blocked even when used with large feed such as apples. The platform is connected to a screw, which is turned by a motor. The motor is controlled in a timely manner with a programmable timer. | 08-20-2009 |
Daniel D. Briere, Mansfield Center, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20110258258 | Method and apparatus for collecting and dissemination of information over a computer network - A device of and method for collecting and disseminating information over at least one computer network is disclosed. The apparatus comprises at least one database for storing digital information associated with at least a first user and a second user, at least one links module for the first user to link to at least a portion of said digital information associated with said second user and for the second user to link to at least a portion of said digital information associated with said first user, at least one manipulations module for manipulating said digital information stored in said at least one database, and at least one display device associated with each of the at least first user and second user for respectively displaying at least said linked digital information to each of said at least first user and second user, wherein said linked digital information associated with said first user is automatically updated on at least said display device of said second user when that information is manipulated, and wherein said linked digital information associated with said second user is automatically updated on at least said display device of said first user when that information is manipulated. | 10-20-2011 |
Didier Briere, L'Aigle FR
| Patent application number | Description | Published |
|---|---|---|
| 20110110748 | Machine A Relier - A machine for binding a packet of sheets of binding elements has a transfer belt designed to magnetically fix the binding elements and to move between a disengagement position in which it receives the binding elements and an engagement position in which it is positioned in a closure zone, closure devices disposed upstream of the transfer belt and designed, in the closure zone, to close the elements, a magnetic binding table disposed upstream of the closure devices, and comprising a fixing zone for holding a series of ends of the elements, and a magnetic top guide disposed upstream of the closure devices and above the binding table, and comprising a fixing zone for holding the other series of ends of the elements, the packet of perforated sheets being inserted between the table and the top guide. | 05-12-2011 |
Eric Bernard Dominique Briere, Houilles FR
| Patent application number | Description | Published |
|---|---|---|
| 20090184203 | COOLING CHANNEL FORMED IN A WALL - A wall element having at least one cooling channel formed therein, the wall element presenting an inside surface and an outside surface, the channel comprising a hole and a diffusion portion, the hole opening out at one end in the inside surface, and at the other end in a diffusion portion where it forms an orifice, the diffusion portion flaring around said orifice and being defined by a bottom wall and a side margin. Said bottom wall presents a first plane portion into which the hole opens out, and a second plane portion situated in front of the first plane portion, said first and second plane portions being inclined in the thickness of the wall. The oriented angle of inclination of said first plane portion is less than the positive oriented angle of inclination of said second plane portion. | 07-23-2009 |
Francine Briere, Saint Germain Sur L'Arbresle FR
| Patent application number | Description | Published |
|---|---|---|
| 20100086560 | CHEMOKINES AS ADJUVANTS OF IMMUNE RESPONSE - Dendritic cells play a critical role in antigen-specific immune responses. Materials and Methods are provided for treating disease states, including cancer, infectious diseases, autoimmune diseases, transplantation, and allergy by facilitating or inhibiting the migration or activation of a specific subset of antigen-presenting dendritic cells known as plasmacytoid dendritic cells (pDC). In particular, methods for treating disease states are provided comprising administration of chemokine receptor agonists and antagonists, alone or in combination with a disease-associated antigen, with or without an activating agent. | 04-08-2010 |
Marc A. Briere, Columbia, MD US
| Patent application number | Description | Published |
|---|---|---|
| 20120080449 | AUTOMATIC DISPENSING CAP FOR SQUEEZABLE BOTTLE - A vented automatic dispending cap for use with a flexible container may generally include a body and a retainer cap attached to the body. A pressure chamber is formed between the body and retainer cap. A set of resilient spring members spaced around the body holds the retainer cap against the body, which seats a valve within a dispensing hole extending through the cap. When the container is squeezed, product in the container may be forced into the pressure chamber expanding the pressure chamber and unseating the valve, thereby allowing product to exit the dispensing opening. A lip seal around the upper circumferential edge of the body prevents fluid from leaking out of the sides of the chamber but allows air to enter the chamber for venting the flexible container. | 04-05-2012 |
Michael A. Briere, Manhattan Beach, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080315129 | Ion planting while growing a III-nitride layer - A method that includes implantation of dopants while a III-nitride body is being grown on a substrate, and an apparatus for the practice of the method. | 12-25-2008 |
| 20090001424 | III-nitride power device - A III-nitride power device that includes a Schottky electrode surrounding one of the power electrodes of the device. | 01-01-2009 |
| 20110095736 | Monolithic III-nitride power converter - A power arrangement that includes a monolithically integrated III-nitride power stage having III-nitride power switches and III-nitride driver switches. | 04-28-2011 |
| 20110223746 | Method for Fabrication of III-Nitride Heterojunction Semiconductor Device - A III-nitride heterojunction power semiconductor device having a barrier layer that includes a region of reduced nitrogen content. | 09-15-2011 |
| 20110227092 | III-Nitride Semiconductor Device - A III-nitride heterojunction power semiconductor device having a barrier layer that includes a region of reduced nitrogen content. | 09-22-2011 |
| 20120062199 | III-Nitride Power Converter Circuit - An integrated circuit that includes a power stage and a driver stage, all stages using III-nitride power devices. | 03-15-2012 |
| 20120062281 | Power Converter with Split Power Supply - A power converter driver that is supplied with two different voltages. | 03-15-2012 |
| 20120091470 | Programmable Gate III-Nitride Power Transistor - A III-nitride semiconductor device which includes a charged floating gate electrode. | 04-19-2012 |
Michael A. Briere, Redondo Beach, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110121313 | Enhancement Mode III-Nitride Transistors with Single Gate Dielectric Structure - According to one embodiment, a III-nitride transistor includes a conduction channel formed between first and second III-nitride bodies, the conduction channel including a two-dimensional electron gas. The transistor also includes at least one gate dielectric layer having a charge confined within to cause an interrupted region of the conduction channel and a gate electrode operable to restore the interrupted region of the conduction channel. The transistor can be an enhancement mode transistor. In one embodiment, the gate dielectric layer is a silicon nitride layer. In another embodiment, the at least one gate dielectric layer is a silicon oxide layer. The charge can be ion implanted into the at least one gate dielectric layer. The at least one gate dielectric layer can also be grown with the charge. | 05-26-2011 |
| 20110198611 | III-Nitride Power Device with Solderable Front Metal - Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson. | 08-18-2011 |
| 20110210338 | Efficient High Voltage Switching Circuits and Monolithic Integration of Same - A high voltage switching circuit includes first and second group III-V transistors, the second group III-V transistor having a greater breakdown voltage than the first group III-V transistor. The circuit further includes a silicon diode in a parallel arrangement with the first group III-V transistor, the parallel arrangement being in cascade with the second group III-V transistor. The circuit is effectively a three-terminal device, where a first terminal is coupled to a gate of the second III-V transistor, a source of the first III-V transistor, and an anode of the silicon diode. A second terminal is coupled to a gate of the first group III-V transistor, and a third terminal is coupled to a drain of the second group III-V transistor. The first group III-V transistor might be an enhancement mode transistor. The second group III-V transistor might be a depletion mode transistor. The first and second group III-V transistors can be GaN HEMTs. | 09-01-2011 |
| 20110227090 | Programmable III-Nitride Transistor with Aluminum-Doped Gate - Disclosed is a III-nitride heterojunction device that includes a conduction channel having a two dimensional electron gas formed at an interface between a first III-nitride material and a second III-nitride material. A modification including a contact insulator, for example, a gate insulator formed under a gate contact, is disposed over the conduction channel, wherein the contact insulator includes aluminum to alter formation of the two dimensional electron gas at the interface. The contact insulator can include AlSiN, or can be SiN doped with aluminum. The modification results in programming the threshold voltage of the III-nitride heterojunction device to, for example, make the device an enhancement mode device. The modification can further include a recess, an ion implanted region, a diffused region, an oxidation region, and/or a nitridation region. In one embodiment, the first III-nitride material comprises GaN and the second III-nitride material comprises AlGaN. | 09-22-2011 |
Rick Briere, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110017264 | THERMAL MANAGEMENT METHOD AND DEVICE FOR SOLAR CONCENTRATOR SYSTEMS - A photovoltaic device. The photovoltaic device includes a photovoltaic region including a surface region and characterized by a first thermal expansion constant. The surface region includes a first portion and a second portion, the second portion includes a first edge region and a second edge region. The photovoltaic device includes a concentrator element comprising substantially of a polymer material and being characterized by a second thermal expansion constant. The concentrator element includes an aperture region and an exit region. The photovoltaic device includes an elastomer material to couple the first portion of the surface region of the photovoltaic region to the exit region of the concentrator element, while the first edge region and the second edge region remain exposed. The first edge region and the second edge region allow for compensation by at least thermal expansion of the concentrator element for a change in temperature ranging from about −45 Degrees Celsius to about 95 Degrees Celsius to maintain the exit region to be optically coupled to the photovoltaic region. | 01-27-2011 |
Ronald William Briere, Weaverville, NC US
| Patent application number | Description | Published |
|---|---|---|
| 20120126595 | GLIDING ROCKING CHAIR AND OTTOMAN - A furniture system includes a chair and an ottoman. The chair, includes a seat, a seatback, first and second armrests, first and second base structures, and at least one chair linkage system. The seat moves relative to the first and second base structures according to the at least one linkage system. The chair includes a recess that stores the ottoman. The ottoman includes a top structure and at least one base structure. The top structure transitions between a first mode and a second mode. In the first mode, the top structure is positioned at a first angle relative to the at least one base structure and moves relative to the at least one base structure. In the second mode, the top structure is positioned at a second angle relative to the at least one base structure and remains fixed relative to the at least one base structure. | 05-24-2012 |
Tina Marie Briere, Houston, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20120068075 | REAL-TIME IN VIVO RADIATION DOSIMETRY USING SCINTILLATION DETECTORS - Apparatus and methods for measuring radiation levels in vivo in real time. Apparatus and methods include a scintillating material coupled to a retention member. | 03-22-2012 |