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Bridger, US
Gary J. Bridger, Bellingham, WA US
| Patent application number | Description | Published |
|---|---|---|
| 20080255197 | CXCR4 CHEMOKINE RECEPTOR BINDING COMPOUNDS - The present invention relates to compounds that bind to chemokine receptors, and having the formula | 10-16-2008 |
| 20080287454 | CXCR4 ANTAGONISTS - The present invention is drawn to novel antiviral compounds, pharmaceutical compositions and their use. More specifically this invention is drawn to derivatives of monocyclic polyamines which have activity in standard tests against HIV- or FIV-infected cells as well as other biological activity related to binding of ligands to chemokine receptors that mediate a number of mammalian embryonic developmental processes. | 11-20-2008 |
| 20090281308 | CHEMOKINE RECEPTOR BINDING HETEROCYCLIC COMPOUNDS WITH ENHANCED EFFICACY - Compounds that interact with the CXCR4 receptor are described. These compounds are useful in treating, for Example, HIV infection and inflammatory conditions such as rheumatoid arthritis, as well as asthma or cancer, and are useful in methods to elevate progenitor and stem cell counts as well as methods to elevate white blood cell counts. | 11-12-2009 |
| 20100003224 | Combination Therapy - Methods to mobilize progenitor and/or stem cells from the bone marrow to the bloodstream by administering a combination of at least one CXCR4 inhibitor and at least one VLA-4 inhibitor are described. The combinations may also be used to treat multiple myeloma. | 01-07-2010 |
| 20100035941 | METHODS FOR INCREASING BLOOD FLOW AND/OR PROMOTING TISSUE REGENERATION - Methods for increasing blood flow and/or regenerating tissue using compounds which bind to the chemokine receptor CXCR4 are disclosed. Preferred embodiments of such compounds are of the formula Z-linker-Z′) wherein Z is a cyclic polyamine containing 9-32 ring members of which 2-8 are nitrogen atoms, said nitrogen atoms separated from each other by at least 2 carbon atoms, and wherein said heterocycle may optionally contain additional heteroatoms besides nitrogen and/or may be fused to an additional ring system; or Z is of the formula (I) wherein A comprises a monocyclic or bicyclic fused ring system containing at least one N and B is H or an organic moiety of 1-20 atoms; Z′ may be embodied in a form as defined by Z above, or alternatively may be of the formula —N(R)—(CR | 02-11-2010 |
| 20100105915 | CHEMOKINE RECEPTOR BINDING HETEROCYCLIC COMPOUNDS - Heterocyclic compounds that bind chemokine receptors and inhibit the binding of their natural ligands are disclosed. The invention compounds are protective against infection by HIV and exert effects characteristic of antagonists to the CXCR4 receptor. | 04-29-2010 |
| 20100178271 | Combination Therapy - Methods to mobilize progenitor and/or stem cells from the bone marrow to the bloodstream by administering a combination of at least one CXCR | 07-15-2010 |
| 20110129448 | METHODS TO MOBILIZE PROGENITOR/STEM CELLS - Methods to elevate progenitor and stem cell counts in animal subjects using compounds which bind to the chemokine receptor CXCR4 are disclosed. Preferred embodiments of such compounds are of the formula | 06-02-2011 |
Keith Bridger, Washington, DC US
| Patent application number | Description | Published |
|---|---|---|
| 20080239627 | High-Temperature Dielectric Materials and Capacitors Made Therefrom - A ceramic dielectric composition suitable for preparing capacitors for use in high-temperature service conditions is disclosed. The ceramic material and capacitors made from it exhibit unique and heretofore unrealizable properties including low variation in capacitance with voltage up to high fields, low variation in capacitance with temperature over a broad temperature range, retained high permittivity at temperatures up to 200° C. and beyond, low loss, low field-induced strain and adequate capacitance to retain performance at very low service temperatures. The material is based on sodium bismuth titanate (NBT) with selected additions of substituents and dopants to broaden and flatten its dielectric response, lower loss, lower strain, lower voltage coefficient and increase resistivity. | 10-02-2008 |
Paul Bridger, Sleepy Hollow, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080296621 | III-nitride heterojunction device - A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof. | 12-04-2008 |
| 20090189187 | Active area shaping for Ill-nitride device and process for its manufacture - A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same. | 07-30-2009 |
Paul Bridger, Altadena, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080274621 | III-Nitride semiconductor device with trench structure - A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications. | 11-06-2008 |
| 20110143517 | III-Nitride Monolithic IC - III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures. | 06-16-2011 |