| Patent application number | Description | Published |
|---|
| 20080253177 | Write Operations for Phase-Change-Material Memory - Improved write operation techniques for use in phase-change-material (PCM) memory devices are disclosed. By way of one example, a method of performing a write operation in a phase-change-material memory cell, the memory cell having a set phase and a reset phase associated therewith, comprises the following steps. A word-line associated with the memory cell is monitored. Performance of a write operation to the memory cell for the set phase is initiated when the word-line is activated. The write operation to the memory cell for the set phase may then be continued when valid data for the set phase is available. A write operation to the memory cell for the reset phase may be performed when valid data for the reset phase is available. Other improved PCM write operation techniques are disclosed. | 10-16-2008 |
| 20080298520 | High-speed multi-mode receiver - A data receiver is provided which is operable to receive a signal controllably pre-distorted and transmitted by a transmitter, to generate information for adjusting the pre-distortion applied to the signal transmitted by the transmitter, and to transmit the information to the transmitter. The receiver is further operable to perform adaptive equalization to receive the signal transmitted by the transmitter. | 12-04-2008 |
| 20090059653 | MULTI-PORT DYNAMIC MEMORY METHODS - A dynamic random access memory circuit is provided, having at least one write bit line, at least one read bit line, a capacitive storage device, a write access device operatively coupled to the capacitive storage device and the at least one write bit line, a sense amplifier operatively coupled to the at least one read bit line and configured to generate an output signal, a refresh bypass device operatively associated with the sense amplifier and the at least one write bit line so as to selectively pass the output signal to the at least one write bit line, and a write-read bypass device operatively coupled to the at least one write bit line and the at least one read bit line and configured to selectively pass a write signal from a write bit line signal point along the at least one write bit line to a read bit line signal point along the at least one read bit line for output to a data output. the output signal is selectively passed to the at least one write bit line. The write signal is selectively passed from the write bit line signal point along the at least one write bit line to the read bit line signal point along the at least one read bit line for output to the data output. | 03-05-2009 |
| 20090108314 | Embedded DRAM Integrated Circuits With Extremely Thin Silicon-On-Insulator Pass Transistors - Integrated circuits having combined memory and logic functions are provided. In one aspect, an integrated circuit is provided. The integrated circuit comprises: a substrate comprising a silicon layer over a BOX layer, wherein a select region of the silicon layer has a thickness of between about three nanometers and about 20 nanometers; at least one eDRAM cell comprising: at least one pass transistor having a pass transistor source region, a pass transistor drain region and a pass transistor channel region formed in the select region of the silicon layer; and a capacitor electrically connected to the pass transistor. | 04-30-2009 |
| 20100002481 | CONTENT ADDRESSABLE MEMORY USING PHASE CHANGE DEVICES - Content addressable memory device utilizing phase change devices. An aspect of the content addressable memory device is the use of a comparatively lower power search-line access element and a comparatively higher power word-line access element. The word-line access element is only utilized during write operations and the search-line access element is only utilized during search operations. The word-line access element being electrically coupled to a second end of a phase change memory element and a word-line. The search-line access element also being electrically coupled to the second end of the phase change memory element and a search-line. The search-line being electrically coupled to a match-line. A bit-line is electrically coupled to a first end of the phase change memory element. Additionally, a complementary set of access elements, a complementary phase change memory element, a complementary search-line, and a complementary bit-line are also included in the content addressable memory device. | 01-07-2010 |
| 20100214014 | SWITCHED CAPACITOR VOLTAGE CONVERTERS - An on-chip voltage conversion apparatus for integrated circuits includes a first capacitor; a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain; a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain; a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain. | 08-26-2010 |
| 20100226161 | TERNARY CONTENT ADDRESSABLE MEMORY USING PHASE CHANGE DEVICES - A content addressable memory device with a plurality of memory cells storing ternary data values of high, low, and don't care. An aspect of the content addressable memory device is the use of first memory elements and second memory elements in the memory cells. The first and second memory elements are electrically coupled in parallel circuit to a match-line. The first memory elements are coupled to first word-lines and the second memory elements are coupled to second word-lines. The first memory elements are configured to store low resistance states if the ternary data value is low and high resistance states if the ternary data value is either high or don't care. The second memory elements are configured to store the low resistance states if the ternary data value is high and the high resistance states if the ternary data value is either low or don't care. | 09-09-2010 |
| 20100259299 | VOLTAGE CONVERSION AND INTEGRATED CIRCUITS WITH STACKED VOLTAGE DOMAINS - An integrated circuit (IC) system includes a plurality of ICs configured in a stacked voltage domain arrangement such that a low side supply rail of at least one of ICs is common with a high side supply rail of at least another of the ICs; a reversible voltage converter coupled to power rails of each of the plurality of ICs, the reversible voltage converter configured for stabilizing individual voltage domains corresponding to each IC; and one or more data voltage level shifters configured to facilitate data communication between ICs operating in different voltage domains, wherein an input signal of a given logic state corresponding to one voltage in a first voltage domain is shifted to an output signal of the same logic state at another voltage in a second voltage domain. | 10-14-2010 |
| 20110101440 | TWO PFET SOI MEMORY CELLS - A CMOS device includes a silicon substrate and an electrical insulator formed over the silicon substrate. The device also includes an access pFET formed over the electrical insulator and a first gate stack and a storage pFET formed over the electrical insulator, the storage pFET including a second source region that is co-formed with the first drain region, a second channel region, and a second drain region. The device also includes a second gate stack including a second dielectric layer formed above the second channel region and a floating gate electrode formed above the second gate dielectric layer. | 05-05-2011 |
