| Patent application number | Description | Published |
|---|
| 20080206483 | PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION - A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power. | 08-28-2008 |
| 20080230008 | PLASMA SPECIES AND UNIFORMITY CONTROL THROUGH PULSED VHF OPERATION - An apparatus for processing a substrate has a chamber, a high frequency power source, and a low frequency power source. The chamber has a first and second electrode disposed therein. The high frequency power source is electrically coupled to either the first or second electrode to supply a first RF signal. The low frequency power source electrically coupled to either the first or second electrode to supply a second RF signal. The first RF signal is pulsed on and off so as to enhance electron loss in the chamber. | 09-25-2008 |
| 20080236490 | PLASMA REACTOR WITH AN OVERHEAD INDUCTIVE ANTENNA AND AN OVERHEAD GAS DISTRIBUTION SHOWERHEAD - A plasma reactor for processing a workpiece includes a gas distribution showerhead having a lid, a manifold having a top surface facing the lid and a bottom surface opposing the top surface. Top surface channels in the manifold top surface form a first set of plural paths extending from a first gas input point to plural path ends of the top surface channels. Gas distribution orifices extend axially through the manifold at respective ones of the path ends. Bottom surface channels in the manifold bottom surface form plural paths extending from locations at each of the gas distribution orifices to plural gas distribution path ends. The showerhead further includes a showerhead piece facing the manifold bottom surface and having plural gas injection orifices extending through the showerhead piece. | 10-02-2008 |
| 20090218317 | METHOD TO CONTROL UNIFORMITY USING TRI-ZONE SHOWERHEAD - Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable. | 09-03-2009 |
| 20090274590 | PLASMA REACTOR ELECTROSTATIC CHUCK HAVING A COAXIAL RF FEED AND MULTIZONE AC HEATER POWER TRANSMISSION THROUGH THE COAXIAL FEED - A workpiece support pedestal includes an insulating puck having a workpiece support surface, a conductive plate underlying the puck, the puck containing electrical utilities and thermal media channels, and an axially translatable coaxial RF path assembly underlying the conductive plate. The coaxial RF path assembly includes a center conductor, a grounded outer conductor and a tubular insulator separating the center and outer conductors, whereby the puck, plate and coaxial RF path assembly comprise a movable assembly whose axial movement is controlled by a lift servo. Plural conduits extend axially through the center conductor and are coupled to the thermal media utilities. Plural electrical conductors extend axially through the tubular insulator and are connected to the electrical utilities. | 11-05-2009 |
| 20090275206 | PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge. | 11-05-2009 |
