Patent application number | Description | Published |
20100108503 | CHALCOGENIDE ALLOY SPUTTER TARGETS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME - In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body comprising at least one chalcogenide alloy having a chalcogenide alloy purity of at least approximately 2N7, gaseous impurities less than 500 ppm for oxygen (O), nitrogen (N), and hydrogen (H) individually, and a carbon (C) impurity less than 500 ppm. In a particular embodiment, the chalcogens of the at least one chalcogenide alloy comprises at least 20 atomic percent of the target body composition, and the chalcogenide alloy has a density of at least 95% of the theoretical density for the chalcogenide alloy. | 05-06-2010 |
20100224245 | Deposition of Photovoltaic Thin Films by Plasma Spray Deposition - In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer. | 09-09-2010 |
20100224247 | Enhancement of Semiconducting Photovoltaic Absorbers by the Addition of Alkali Salts Through Solution Coating Techniques - In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent. | 09-09-2010 |
20110023933 | Interconnection Schemes for Photovoltaic Cells - In particular embodiments, a method is described for fabricating a photovoltaic cell and includes providing a substrate; depositing a bottom contact layer over the substrate; masking one or more portions of the bottom contact layer; depositing one or more photovoltaic absorber layers over the bottom contact layer; and depositing a top contact layer over the one or more photovoltaic absorber layers, wherein the one or more portions of the bottom contact layer are left exposed after depositing the one or more photovoltaic absorber layers and the top contact layer as a result of the masking thereby leaving the one or more portions of the bottom contact layer suitable for use as electrical contacts. | 02-03-2011 |
20110290643 | Low Melting Point Sputter Targets for Chalcogenide Photovoltaic Applications and Methods of Manufacturing the Same - In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu | 12-01-2011 |
20120199173 | Interconnection Schemes for Photovoltaic Cells - In particular embodiments, a method is described for fabricating a photovoltaic cell and includes providing a substrate; depositing a bottom-contact layer over the substrate; masking a portion of the bottom-contact layer; depositing a photovoltaic-absorber layer over the bottom-contact layer; and depositing a top-contact layer over the a photovoltaic-absorber layer. A portion of the bottom-contact layer is left exposed after depositing the photovoltaic-absorber layer and the top-contact layer as a result of the masking, thereby leaving the exposed portion of the bottom-contact layer suitable for use as an electrical contact. | 08-09-2012 |
20120240980 | Interconnection Schemes for Photovoltaic Cells - In particular embodiments, a method is described for fabricating a photovoltaic cell and includes providing a substrate; depositing a bottom-contact layer over the substrate; masking a portion of the bottom-contact layer; depositing a photovoltaic-absorber layer over the bottom-contact layer; depositing a top-contact layer over the a photovoltaic-absorber layer; and placing an interconnection sheet onto the top-contact layer. A portion of the bottom-contact layer is left exposed after depositing the photovoltaic-absorber layer and the top-contact layer as a result of the masking, thereby leaving the exposed portion of the bottom-contact layer suitable for use as an electrical contact for the interconnection sheet. In this way, the interconnection sheet electrically connects the photovoltaic cell with the adjacent photovoltaic cells via electrical contact with the top-contact layer of one photovoltaic cell and the exposed bottom-contact layer of an adjacent photovoltaic cell. | 09-27-2012 |
20130126346 | CHALCOGENIDE ALLOY SPUTTER TARGETS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME - In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body comprising at least one chalcogenide alloy having a chalcogenide alloy purity of at least approximately 2N7, gaseous impurities less than 500 ppm for oxygen (0), nitrogen (N), and hydrogen (H) individually, and a carbon (C) impurity less than 500 ppm. In a particular embodiment, the chalcogens of the at least one chalcogenide alloy comprises at least 20 atomic percent of the target body composition, and the chalcogenide alloy has a density of at least 95% of the theoretical density for the chalcogenide alloy. | 05-23-2013 |
20130167914 | DEPOSITION OF PHOTOVOLTAIC THIN FILMS BY PLASMA SPRAY DEPOSITION - In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer. | 07-04-2013 |
20130217176 | Closed-Space Annealing of Chalcogenide Thin-Films with Volatile Species - In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing. | 08-22-2013 |
20130217214 | Closed-Space Annealing Process for Production of CIGS Thin-Films - In one embodiment, a method includes depositing a CIGS precursor layer onto a substrate, introducing a source-material layer into proximity with the precursor layer, where the source-material layer includes one or more of Cu, In, or Ga, and one or more of S or Se, and annealing the precursor layer in proximity with of the source-material layer, where the annealing is performed in a constrained volume, and where the presence of the source-material layer reduces decomposition of volatile species from the precursor layer during annealing. | 08-22-2013 |
20130276888 | Reverse Stack Structures for Thin-Film Photovoltaic Cells - In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate. | 10-24-2013 |
20140318624 | ENHANCEMENT OF SEMICONDUCTING PHOTOVOLTAIC ABSORBERS BY THE ADDITION OF ALKALI SALTS THROUGH SOLUTION COATING TECHNIQUES - In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent. | 10-30-2014 |