| Patent application number | Description | Published |
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| 20090174458 | Level Shifter with Embedded Logic and Low Minimum Voltage - In one embodiment, a level shifter circuit may include a shift stage that also embeds transistors that implement a logic operation on two or more inputs to the level shifter. At least one of the inputs may be sourced from circuitry that is powered by a different power supply than the level shifter and circuitry that receives the level shifter output. Additionally, the level shifter includes one or more dummy transistors that match transistors the perform the logic operation, to improve symmetry of the level shifter circuit. In some embodiments, certain design and layout rules may be applied to the level shifter circuit to limit variation in the symmetry over various manufacturing variations. | 07-09-2009 |
| 20100085079 | Low Latency, Power-Down Safe Level Shifter - In one embodiment, an apparatus comprises a circuit supplied by a first supply voltage during use, the circuit having at least a first input signal; and a level shifter supplied by the first supply voltage during use and coupled to provide the first input signal to the circuit. The level shifter is coupled to receive a second input signal sourced from circuitry supplied by a second supply voltage during use, and is configured to generate the first input signal by level shifting the second input signal. Coupled to receive a power control signal indicating, when asserted, that the second supply voltage is to be powered down, the level shifter is configured to assert a predetermined level on the first input signal independent of the second input signal and responsive to an assertion of the power control signal. | 04-08-2010 |
| 20100254206 | Cache Optimizations Using Multiple Threshold Voltage Transistors - In one embodiment, a memory circuit includes one or more memory cells that include transistors having a first nominal threshold voltage, and interface circuitry such as word line drivers and bit line control circuitry that includes one or more transistors having a second nominal threshold voltage that is lower than the first nominal threshold voltage. For example, the word line driver circuit may be driven by signals from a lower voltage domain than the memory circuit's voltage domain. Lower threshold voltage transistors may be used for those signals, in some embodiments. Similarly, lower threshold voltage transistors may be used in the write data driver circuits. Other bit line control circuits may include lower threshold voltage transistors to permit smaller transistors to be used, which may reduce power and integrated circuit area occupied by the memory circuits. | 10-07-2010 |
| 20100277219 | Clock Gater with Test Features and Low Setup Time - A clock gater circuit comprises a plurality of transistors having source-drain connections forming a stack between a first node and a supply node. A given logical state on the first node causes a corresponding logical state on an output clock of the clock gater circuit. In one embodiment, a first transistor of the plurality of transistors has a gate coupled to receive an enable input signal. A second transistor is connected in parallel with the first transistor, and has a gate controlled responsive to a test input signal to ensure that the output clock is generated even if the enable input signal is not in an enabled state. In another embodiment, the plurality of transistors comprises a first transistor having a gate controlled responsive to a clock input of the clock gater circuit and a second transistor having a gate controlled responsive to an output of a delay circuit. The delay circuit comprises at least one inverter, wherein an input of the delay circuit is the clock input, and wherein a first inverter of the delay circuit is coupled to receive a test input signal and is configured to force a first logical state on an output of the first inverter responsive to an assertion of the test input signal. | 11-04-2010 |
| 20100329062 | Leakage and NBTI Reduction Technique for Memory - In one embodiment, an integrated circuit includes a logic circuit and a memory circuit that includes multiple bit lines and bit line precharge circuits. The memory circuit may include level shifters for control signals generated from logic circuit inputs, and particularly there may be one or more level shifters that generate precharge enable signals to control the bit line precharge circuits. The level shifters for the bit line precharge circuits may also be controlled, during periods of time that the memory circuit is idle, by an input control signal (FloatBL herein). If the FloatBL signal is asserted, the bit line precharge circuits may be disabled to float the bit lines. In some embodiments, the FloatBL signal may also disable bit line bit line hold circuits on the bit lines. In some embodiments, when the memory circuit is exiting an idle state, the bit line precharge circuits may be enabled in a staggered fashion. | 12-30-2010 |
| 20110032020 | Level Shifter with Embedded Logic and Low Minimum Voltage - In one embodiment, a level shifter circuit may include a shift stage that also embeds transistors that implement a logic operation on two or more inputs to the level shifter. At least one of the inputs may be sourced from circuitry that is powered by a different power supply than the level shifter and circuitry that receives the level shifter output. Additionally, the level shifter includes one or more dummy transistors that match transistors the perform the logic operation, to improve symmetry of the level shifter circuit. In some embodiments, certain design and layout rules may be applied to the level shifter circuit to limit variation in the symmetry over various manufacturing variations. | 02-10-2011 |
| 20110255351 | Level Shifter with Embedded Logic and Low Minimum Voltage - In one embodiment, a level shifter circuit may include a shift stage that also embeds transistors that implement a logic operation on two or more inputs to the level shifter. At least one of the inputs may be sourced from circuitry that is powered by a different power supply than the level shifter and circuitry that receives the level shifter output. Additionally, the level shifter includes one or more dummy transistors that match transistors the perform the logic operation, to improve symmetry of the level shifter circuit. In some embodiments, certain design and layout rules may be applied to the level shifter circuit to limit variation in the symmetry over various manufacturing variations. | 10-20-2011 |
| 20110255355 | Leakage and NBTI Reduction Technique for Memory - In one embodiment, an integrated circuit includes a logic circuit and a memory circuit that includes multiple bit lines and bit line precharge circuits. The memory circuit may include level shifters for control signals generated from logic circuit inputs, and particularly there may be one or more level shifters that generate precharge enable signals to control the bit line precharge circuits. The level shifters for the bit line precharge circuits may also be controlled, during periods of time that the memory circuit is idle, by an input control signal (FloatBL herein). If the FloatBL signal is asserted, the bit line precharge circuits may be disabled to float the bit lines. In some embodiments, the FloatBL signal may also disable bit line bit line hold circuits on the bit lines. In some embodiments, when the memory circuit is exiting an idle state, the bit line precharge circuits may be enabled in a staggered fashion. | 10-20-2011 |
