| Patent application number | Description | Published |
|---|
| 20080210157 | Systems and methods for forming strontium-and/or barium-containing layers - A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process. | 09-04-2008 |
| 20080227303 | SYSTEMS AND METHODS FOR FORMING TANTALUM OXIDE LAYERS AND TANTALUM PRECURSOR COMPOUNDS - A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example. | 09-18-2008 |
| 20080274615 | Atomic Layer Deposition Methods, Methods of Forming Dielectric Materials, Methods of Forming Capacitors, And Methods of Forming DRAM Unit Cells - Some embodiments include methods of forming metal-containing oxides. The methods may utilize ALD where a substrate surface is exposed to an organometallic composition while the substrate surface is at a temperature of at least 275° C. to form a metal-containing layer. The metal-containing layer may then be exposed to at least one oxidizing agent to convert the metal-containing layer to a metal-containing oxide. The ALD may occur in a reaction chamber, with the oxidizing agent and the organometallic composition being present within such chamber at substantially non-overlapping times relative to one another. The oxidizing agent may be a milder oxidizing agent than ozone. The metal-containing oxide may be utilized as a capacitor dielectric, and may be incorporated into a DRAM unit cell. | 11-06-2008 |
| 20090042406 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL COMPOUNDS CONTAINING AMINOSILANE LIGANDS - A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands. | 02-12-2009 |
| 20090109731 | DIELECTRIC LAYERS AND MEMORY CELLS INCLUDING METAL-DOPED ALUMINA - A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process. | 04-30-2009 |
| 20090149033 | SYSTEMS AND METHODS FOR FORMING METAL OXIDE LAYERS - A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds. | 06-11-2009 |
| 20090278232 | RUTHENIUM SILICIDE DIFFUSION BARRIER LAYERS AND METHODS OF FORMING SAME - A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The diffusion barrier layer is formed of RuSi | 11-12-2009 |
| 20100099272 | SYSTEMS AND METHODS FOR FORMING METAL OXIDES USING METAL DIKETONATES AND/OR KETOIMINES - A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands. | 04-22-2010 |
| 20100147218 | SYSTEMS AND METHODS FOR FORMING METAL OXIDE LAYERS - A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds. | 06-17-2010 |
| 20100171089 | DIELECTRIC LAYERS AND MEMORY CELLS INCLUDING METAL-DOPED ALUMINA - A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process. | 07-08-2010 |
| 20100199486 | Flow-Fill Spacer Structures for Flat Panel Display Device - A preferred embodiment of the invention is directed to support structures such as spacers used to provide a uniform distance between two layers of a device. In accordance with a preferred embodiment, the spacers may be formed utilizing flow-fill deposition of a wet film in the form of a precursor such as silicon dioxide. Formation of spacers in this manner provides a homogenous amorphous support structure that may be used to provide necessary spacing between layers of a device such as a flat panel display. | 08-12-2010 |
| 20110121376 | Dielectric Layers and Memory Cells Including Metal-Doped Alumina - A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process. | 05-26-2011 |
