Patent application number | Description | Published |
20090011331 | SEAL RING AND ASSOCIATED METHOD - An article includes a seal ring for an energy storage device. The seal ring has a weldable first portion and a weldable second portion. The first and second portions are electrically isolatable from each other by an electrically insulating third portion. | 01-08-2009 |
20090079346 | HIGH INTENSITY DISCHARGE LAMP HAVING COMPOSITE LEG - A system, in certain embodiments, includes a high intensity discharge lamp having a composite leg. The composite leg includes a plurality of leg sections coupled together in series. The plurality of leg sections includes different materials, coefficients of thermal expansion, Poisson's ratios, or elastic moduli, or a combination thereof. A method, in certain embodiments, includes enclosing a high intensity discharge within a ceramic arc envelope. The method also includes reducing thermal stresses associated with the high intensity discharge via a composite leg extending outwardly from the ceramic arc envelope. The composite leg includes a plurality of leg sections coupled together in series. The plurality of leg sections includes different materials, coefficients of thermal expansion, Poisson's ratios, or elastic moduli, or a combination thereof. | 03-26-2009 |
20090199392 | ULTRASOUND TRANSDUCER PROBES AND SYSTEM AND METHOD OF MANUFACTURE - A method for fabricating an ultrasound transducer structure is disclosed. The method includes performing the steps of forming a functional layer, including an ultrasound transducer material and a photopolymer, and exposing a plurality of selected regions of the functional layer to a programmable light pattern to cure the selected regions of the functional layer to form polymerized ultrasound transducer material regions, repeatedly. The method further includes selectively removing unexposed regions of the functional layer to obtain a green component, and sintering the green component to obtain the sensing structure. A system for making at least one piezoelectric element is also disclosed. | 08-13-2009 |
20110244303 | Metalized Ceramic and Associated Method - A metalized ceramic comprising a ceramic substrate comprising a first ceramic and a ceramic metallization layer disposed on the ceramic substrate. The ceramic metallization layer comprises a mixture of (i) a second ceramic and (ii) a metal comprising nickel or a refractory metal. The refractory metal may consist one or more of molybdenum, tungsten, niobium and tantalum. The first ceramic and the second ceramic have a purity of greater than about 95 percent. A method of making the metalized ceramic is provided. An electrochemical cell including the metalized ceramic is also provided. | 10-06-2011 |
Patent application number | Description | Published |
20080219027 | LIGHT REDIRECTING FILM HAVING VARIABLE THICKNESS - A display comprises a light source and a light redirecting polymeric film containing a structured surface on at least one side of the film and bearing a polymeric coating over at least part of the structured surface wherein the coating exhibits a variable thickness. | 09-11-2008 |
20080219028 | LIGHT REDIRECTING FILM HAVING DISCONTINUOUS COATING - The invention relates to a display comprising a light source and a light redirecting polymeric film containing a structured surface on at least one side of the film and bearing a discontinuous population of adherent beads bonded to the structured surface. | 09-11-2008 |
20090180282 | Multilayered integrated backlight illumination assembly - The present invention provides a multilayered integrated backlight illumination assembly for an LCD display comprising a substrate for providing structural and functional support to the assembly, a bottom reflector provided on the substrate and a plurality of solid state light sources provided in an opening of the bottom reflector for providing a point light source. The invention further provides a plurality of primary light films having light redirecting areas provided between the plurality of solid state light sources for redirecting and spreading the point light source to a uniform plane of light, a plurality of secondary light films having light redirecting areas provided between the plurality of solid state light sources for redirecting and spreading the point light source to a uniform plane of light and a binding means for binding the primary and secondary light films together. Further, the invention provides a top diffuser for diffusing the uniform plane of light and wherein the plurality of light films has a thickness between 0.1 mm to 1.0 mm and a bending stiffness between 50 to 1200 millinewtons. | 07-16-2009 |
20110026273 | Optical coupling device for light guiding film - A uniform light source having a substrate for providing structural and functional support to the assembly. A bottom reflector provided on the substrate. A plurality of solid state light sources provided in an opening of the bottom reflector for providing a point light source. A plurality of light films and having light redirecting areas provided between the plurality of solid state light sources for redirecting and spreading the point light source to a uniform plane of light; a joining clip comprising a top capping portion and a bottom support portion, the bottom support portion being aligned perpendicular to the top capping portion and having a height sufficient to house the plurality of light films. A top diffuser for diffusing the uniform plane of light. The plurality of light films has a thickness between 0.1 mm to 1.0 mm. | 02-03-2011 |
20110026274 | Backlight illumination assembly having a joining clip with diffusion means - A uniform light source having a substrate for providing structural and functional support to the assembly. A bottom reflector provided on the substrate. A plurality of solid state light sources provided in an opening of the bottom reflector for providing a point light source. A plurality of light films and having light redirecting areas provided between the plurality of solid state light sources for redirecting and spreading the point light source to a uniform plane of light; a joining clip comprising a top capping portion and a bottom support portion, the bottom support portion being aligned perpendicular to the top capping portion and having a height sufficient to house the plurality of light films. A top diffuser for diffusing the uniform plane of light. The plurality of light films has a thickness between 0.1 mm to 1.0 mm. In addition, the joining clip further comprises a light diffusion means. | 02-03-2011 |
Patent application number | Description | Published |
20120026780 | Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices - A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s). | 02-02-2012 |
20120037879 | NON VOLATILE MEMORY DEVICE ION BARRIER - An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile. | 02-16-2012 |
20120043521 | Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices - A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s). | 02-23-2012 |
20120300535 | NON-VOLATILE MEMORY DEVICE ION BARRIER - An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile. | 11-29-2012 |
20130214233 | CONDUCTIVE METAL OXIDE STRUCTURES IN NON VOLATILE RE WRITABLE MEMORY DEVICES - A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s). | 08-22-2013 |