Patent application number | Description | Published |
20100025811 | INTEGRATED CIRCUIT WITH BUILT-IN HEATING CIRCUITRY TO REVERSE OPERATIONAL DEGENERATION - An integrated circuit device ( | 02-04-2010 |
20110060868 | MULTI-BANK FLASH MEMORY ARCHITECTURE WITH ASSIGNABLE RESOURCES - This disclosure has described embodiments of a nonvolatile memory that includes at least two concurrently accessible memory banks ( | 03-10-2011 |
20110060875 | FRACTIONAL PROGRAM COMMANDS FOR MEMORY DEVICES - A memory system ( | 03-10-2011 |
20110299317 | INTEGRATED CIRCUIT HEATING TO EFFECT IN-SITU ANNEALING - In a system having a memory device, an event is detected during system operation. The memory device is heated to reverse use-incurred degradation of the memory device in response to detecting the event. In another system, the memory device is heated to reverse use-incurred degradation concurrently with execution of a data access operation within another memory device of the system. In another system having a memory controller coupled to first and second memory devices, data is evacuated from the first memory device to the second memory device in response to determining that a maintenance operation is needed within the first memory device. | 12-08-2011 |
20130138882 | VERIFY BEFORE PROGRAM RESUME FOR MEMORY DEVICES - A method of programming data into a memory device including an array of memory cells is disclosed. The method comprises receiving at least one program command that addresses a number of the memory cells for a programming operation to program data in the memory cells. The at least one program command is executed by iteratively carrying out at least one program/verify cycle to incrementally program the addressed memory cells with the program data. A secondary command may be selectively received after initiating but before completing the programming operation. The programming operation may be selectively resumed by first verifying the memory cells, then carrying out at least one program/verify cycle. | 05-30-2013 |
20130148437 | THERMAL ANNEAL USING WORD-LINE HEATING ELEMENT - In response to detecting an event during operation of an integrated-circuit memory device containing charge-storing memory cells, an electric current is enabled to flow through a word line coupled to the charge-storing memory cells for a brief interval to heat the charge-storing memory cells to an annealing temperature range. | 06-13-2013 |
20140254286 | THERMAL ANNEAL USING WORD-LINE HEATING ELEMENT - In response to detecting an event during operation of an integrated-circuit memory device containing charge-storing memory cells, an electric current is enabled to flow through a word line coupled to the charge-storing memory cells for a brief interval to heat the charge-storing memory cells to an annealing temperature range. | 09-11-2014 |
20150248327 | MEMORY MODULE WITH DEDICATED REPAIR DEVICES - A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations. | 09-03-2015 |