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Brenda L.
Brenda L. Garcia, West Columbia, SC US
| Patent application number | Description | Published |
|---|---|---|
| 20090065738 | Electrocatalyst Support and Catalyst Supported Thereon - In one embodiment of the present disclosure an electrocatalyst support for a fuel cell is provided which includes a doped titania metal oxide. The dopant includes a valve metal. The doped titania metal oxide has a BET surface area of greater than 20 m | 03-12-2009 |
Brenda L. Joostberns, Nashville, MI US
| Patent application number | Description | Published |
|---|---|---|
| 20110139834 | DEVICE TO ASSIST PUTTING CLOTHES ON - A device or apparatus for assisting a user in putting on an outer coat or other garment comprises a sleeve-like member that is made of a thin flexible material, with an enlarged opening at a first end, and at least two openings at a second end. In use, a user slides the apparatus over a sleeve of an inner garment, and positions one or more fingers in the openings at the second end of the device. The user then inserts his/her hand and arm into the sleeve of an outer garment, and the apparatus is then pulled off the user's hand and arm. The apparatus ensures that the sleeve of the inner garment remains in its proper position on the user's arm as the user's hand and arm are inserted into the sleeve of the outer garment. | 06-16-2011 |
Brenda L. Meding, Millsboro, DE US
| Patent application number | Description | Published |
|---|---|---|
| 20110165673 | METHODS OF CULTURING BACTERIAL SPECIES OF THE ANAPLASMATACEAE FAMILY - The present invention relates to a method of culturing bacterial organisms belonging to the family Anaplasmataceae in mammalian embryonic or fetal cells. In particular, the present invention is directed to growth of bacterial organisms belonging to the family Anaplasmataceae including organisms belonging to the | 07-07-2011 |
Brenda L. Tjelta, St.paul, MN US
| Patent application number | Description | Published |
|---|---|---|
| 20090018046 | TREATED OXIDIZING AGENT, DETERGENT COMPOSITION CONTAINING A TREATING OXIDIZING AGENT, AND METHODS FOR PRODUCING - A treated oxidizing agent is provided according to the invention. The treated oxidizing agent includes an oxidizing agent that is solid at room temperature and atmospheric pressure, and a chemical barrier composition provided on the oxidizing agent. The chemical barrier composition includes a hydrocarbon component having about 10 to about 85 carbon atoms, and wherein the chemical barrier composition is provided as a liquid at 25° C. A solid detergent composition is provided including the treated oxidizing agent. Methods for manufacturing are provided. | 01-15-2009 |
Brenda L. Vanmil, Missoula, MT US
| Patent application number | Description | Published |
|---|---|---|
| 20110045281 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SIC - A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm | 02-24-2011 |
Brenda L. Vanmil, Alexandria, VA US
| Patent application number | Description | Published |
|---|---|---|
| 20090114148 | METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATION CONCENTRATIONS - A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method. | 05-07-2009 |
| 20100024719 | TRACKING CARBON TO SILICON RATIO IN SITU DURING SILICON CARBIDE GROWTH - A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber. | 02-04-2010 |