Brabant
Lisa Ann Brabant, Stony Brook, NY US
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20090299410 | Sterling silver and/or metal gel and/or liquid centered teether - The present invention is an infant teether or teething device with a hollow metal exterior, which may be comprised of, but shall not be limited to, sterling silver, aluminum or any other rust-resistant metal material and which may have a handle or portion of the exterior of the teether being composed of either metal covered by rubber, plastic, or a similar material or a handle composed solely of rubber, plastic, or a similar material to prevent the handle from becoming too cold. Inside the teether will be a liquid or gel that has the ability to remain cold for a prolonged time period following refrigeration or freezing. Said liquid or gel center may be comprised of, but shall not be limited to, water, food grade propalyne glycol, any other food grade, freezer-friendly gel or similar non-toxic material. The interior liquid or gel shall be enclosed in a sealed bag, expandable plastic material or other enclosed container capable of being frozen while holding a liquid and/or gel in order to prevent leakage. | 12-03-2009 |
20120232591 | Sterling silver and/or metal gel and/or liquid centered teether - The present invention is a multi-textured infant teether or teething device, where a portion of the teether is a rounded and curved, hard, smooth, hollow, metal exterior that is comprised of sterling silver, aluminum or any other rust-resistant metal material and a portion of the teether is a handle that is comprised of either metal covered by rubber or plastic or solely of rubber or plastic to prevent the teether from becoming too cold to hold. Inside the multi-textured teether will be a liquid or gel, comprised of water, food grade propalyne glycol, any other food grade, freezer-friendly gel or similar non-toxic material, that has the ability to remain cold for a prolonged time period following refrigeration or freezing, which shall be enclosed in a sealed bag, enclosed expandable plastic material or other container capable of being frozen while holding a liquid and/or gel in order to prevent leakage. | 09-13-2012 |
Matthew C. Brabant, Rochester Hills, MI US
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20110145773 | Method of Optimizing Automotive Electrical Wiring - A method is provided for selecting wiring components for a circuit including at least one predetermined load. A user identifies a fuse type. A target current needed to achieve a desired fuse blow time for the identified fuse type is obtained from a lookup table. A minimum wire size for supporting steady state operation of the circuit is also obtained from a lookup table. The user identifies one or more wire segments to be included in the circuit, including specifying each respective wire length. An aggregate circuit resistance including each identified wire segment is calculated, wherein when a wire segment is first identified it is assigned the minimum wire size and its resistance is determined based on its respective length. A provisional short circuit current is calculated in response to the aggregate circuit resistance. The provisional short circuit current is compared to the target current. If the provisional short circuit current is less than the target current, the user is prompted to select an increased wire size for at least one wire segment. Otherwise, an optimized circuit is indicated to the user. | 06-16-2011 |
Paul Brabant, E Greenbush, NY US
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20140120678 | Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional Structures - The present invention addresses the key challenges in FinFET fabrication, that is, the fabrications of thin, uniform fins and also reducing the source/drain series resistance. More particularly, this application relates to FinFET fabrication techniques utilizing tetrasilane to enable conformal deposition with high doping using phosphate, arsenic and boron as dopants thereby creating thin fins having uniform thickness (uniformity across devices) as well as smooth, vertical sidewalls, while simultaneously reducing the parasitic series resistance. | 05-01-2014 |
Paul Brabant, Phoenix, AZ US
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20100089314 | SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION - A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside). | 04-15-2010 |
Paul D. Brabant, Phoenix, AZ US
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20100006024 | EPITAXIAL SEMICONDUCTOR DEPOSITION METHODS AND STRUCTURES - Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer. | 01-14-2010 |
Paul D. Brabant, Scodack, NY US
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20120295421 | LOW TEMPERATURE SELECTIVE EPITAXY OF SILICON GERMANIUM ALLOYS EMPLOYING CYCLIC DEPOSIT AND ETCH - Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step. | 11-22-2012 |
20140045324 | LOW TEMPERATURE EPITAXY OF A SEMICONDUCTOR ALLOY INCLUDING SILICON AND GERMANIUM EMPLOYING A HIGH ORDER SILANE PRECURSOR - A high order silane having a formula of Si | 02-13-2014 |
Paul D. Brabant, Schodack, NY US
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20130040438 | EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2 - A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH | 02-14-2013 |
20130040440 | EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2 - A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH | 02-14-2013 |
Paul David Brabant, East Greenbush, NY US
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20120003819 | Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material - The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. | 01-05-2012 |
20120024223 | Thin films and methods of making them using cyclohexasilane - Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. | 02-02-2012 |
Ryan Anthony Brabant, San Antonio, TX US
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20160121072 | Obstructive Sleep Apnea Treatment Device - An obstructive sleep apnea treatment device is disclosed herein. In embodiments the device eliminates the need for large peripheral equipment such as an air pump and hoses commonly associated with current treatment devices. In embodiments, the device is comprised of a main mask body component, at least one expiratory or exhalation pressure valve, at least one inspiratory or inhalation valve. In other embodiments, the device is further comprised of a forehead cushion component, a facial seal component, and an attachment component. In embodiments, the main mask body component is a nasal covering mask configured with a positive end expiratory adjustable pressure valve to generate a resistance on a patient's exhalation thus pressuring the nasal airways without the need of an air pump or electrical power source. Positive pressurization of the airways reduces the occurrence of apneas. | 05-05-2016 |
Thomas Brabant, Mittweida DE
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20090017219 | Layer application device for an electrostatic layer application of a building material in powder form and device and method for manufacturing a three-dimensional object - A device for applying powder onto an application surface has a powder container ( | 01-15-2009 |