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Brabant
Lisa Ann Brabant, Stony Brook, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20090299410 | Sterling silver and/or metal gel and/or liquid centered teether - The present invention is an infant teether or teething device with a hollow metal exterior, which may be comprised of, but shall not be limited to, sterling silver, aluminum or any other rust-resistant metal material and which may have a handle or portion of the exterior of the teether being composed of either metal covered by rubber, plastic, or a similar material or a handle composed solely of rubber, plastic, or a similar material to prevent the handle from becoming too cold. Inside the teether will be a liquid or gel that has the ability to remain cold for a prolonged time period following refrigeration or freezing. Said liquid or gel center may be comprised of, but shall not be limited to, water, food grade propalyne glycol, any other food grade, freezer-friendly gel or similar non-toxic material. The interior liquid or gel shall be enclosed in a sealed bag, expandable plastic material or other enclosed container capable of being frozen while holding a liquid and/or gel in order to prevent leakage. | 12-03-2009 |
Matthew C. Brabant, Rochester Hills, MI US
| Patent application number | Description | Published |
|---|---|---|
| 20110145773 | Method of Optimizing Automotive Electrical Wiring - A method is provided for selecting wiring components for a circuit including at least one predetermined load. A user identifies a fuse type. A target current needed to achieve a desired fuse blow time for the identified fuse type is obtained from a lookup table. A minimum wire size for supporting steady state operation of the circuit is also obtained from a lookup table. The user identifies one or more wire segments to be included in the circuit, including specifying each respective wire length. An aggregate circuit resistance including each identified wire segment is calculated, wherein when a wire segment is first identified it is assigned the minimum wire size and its resistance is determined based on its respective length. A provisional short circuit current is calculated in response to the aggregate circuit resistance. The provisional short circuit current is compared to the target current. If the provisional short circuit current is less than the target current, the user is prompted to select an increased wire size for at least one wire segment. Otherwise, an optimized circuit is indicated to the user. | 06-16-2011 |
Paul Brabant, Phoenix, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20100089314 | SUBSTRATE SUPPORT SYSTEM FOR REDUCED AUTODOPING AND BACKSIDE DEPOSITION - A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside). | 04-15-2010 |
Paul D. Brabant, Phoenix, AZ US
| Patent application number | Description | Published |
|---|---|---|
| 20100006024 | EPITAXIAL SEMICONDUCTOR DEPOSITION METHODS AND STRUCTURES - Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer. | 01-14-2010 |
Paul David Brabant, East Greenbush, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20120003819 | Methods and apparatus for selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing material - The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions. | 01-05-2012 |
Thomas Brabant, Mittweida DE
| Patent application number | Description | Published |
|---|---|---|
| 20090017219 | Layer application device for an electrostatic layer application of a building material in powder form and device and method for manufacturing a three-dimensional object - A device for applying powder onto an application surface has a powder container ( | 01-15-2009 |