Bouisse, Toulouse
Gerard Bouisse, Toulouse FR
Patent application number | Description | Published |
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20110031571 | WIRELESS COMMUNICATION UNIT AND SEMICONDUCTOR DEVICE HAVING A POWER AMPLIFIER THEREFOR - A semiconductor package device comprises a radio frequency power transistor having an output port operably coupled to a single de-coupling capacitance located within the semiconductor package device. The single de-coupling capacitance is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor. | 02-10-2011 |
20110175680 | WIRELESS COMMUNICATION DEVICE AND SEMICONDUCTOR PACKAGE DEVICE HAVING A POWER AMPLIFIER THEREFOR - A semiconductor package device comprises a first amplifier block, at least one further amplifier block operably coupled in parallel with the first amplifier block between a common input and a common output, and at least one stabilisation network operably coupled between a node of the first amplifier block and a corresponding node of the at least one further amplifier block. The at least one stabilisation network comprises an inductance operably coupled between the corresponding nodes of the first and at least one further amplifier blocks, and a capacitance operably coupling a mid-point of the inductance to a ground plane. | 07-21-2011 |
20120038421 | WIRELESS COMMUNICATION DEVICE AND SEMICONDUCTOR PACKAGE DEVICE HAVING A POWER AMPLIFIER THEREFOR - A semiconductor package device comprises a first amplifier block, at least one further amplifier block, and at least one differential inductance operably coupled between a first plurality of elements of the output of a first active component of the first amplifier block and a second plurality of elements of the output of a first active component of the at least one further amplifier block. The differential inductance is arranged such that a uniform inductance is provided between the first plurality of elements of the first active component of the first amplifier block and the second plurality elements of the second active component of the at least one further amplifier block. | 02-16-2012 |
Gerard Jean-Louis Bouisse, Toulouse FR
Patent application number | Description | Published |
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20140103447 | POWER RF AMPLIFIERS - A power transistor circuit uses first and second power transistors in differential mode. An inductor arrangement of inductors is formed by wire bonds between the drains. The transistors are in a mirrored configuration, and the inductor arrangement comprises wire bonds which extend between the drain connections across the space between the mirrored transistors. | 04-17-2014 |
20140104004 | AMPLIFIER CIRCUITS - Radio Frequency (RF) amplifier circuits are disclosed which may exhibit improved video/instantaneous bandwidth performance compared to conventional circuits. For example, disclosed RF amplifier circuits may employ a baseband decoupling network connected in parallel with a low-pass RF matching network of the amplifier circuit. | 04-17-2014 |
20140179243 | AMPLIFIER CIRCUITS - Radio Frequency (RF) amplifier circuits are disclosed which may exhibit improved video/instantaneous bandwidth performance compared to conventional circuits. For example, disclosed RF amplifier circuits employ various concepts for reducing an overall circuit inductance or enabling an increase in capacitance for a given circuit size. | 06-26-2014 |
20140368270 | MARCHAND BALUN AND POWER AMPLIFIER USING THE SAME - A Marchand balun has a primary transmission line with a width smaller than the two secondary transmission lines. The two secondary transmission lines also have different widths and lengths. This arrangement provides an imbalance between the widths and lengths of the transmission lines. It has been found that this imbalance can enable improved amplitude unbalance and phase unbalance. | 12-18-2014 |
20150048884 | AMPLIFIER CIRCUITS - Differential amplifier circuits for LDMOS-based amplifiers are disclosed. The differential amplifier circuits comprise a high resistivity substrate and separate DC and AC ground connections. Such amplifier circuits may not require thru-substrate vias for ground connection. | 02-19-2015 |