| Patent application number | Description | Published |
|---|
| 20080230815 | Mitigation of gate to contact capacitance in CMOS flow - Sidewall spacers that are primarily oxide, instead of nitride, are formed adjacent to a gate stack of a CMOS transistor. Individual sidewall spacers are situated between a conductive gate electrode of the gate stack and a conductive contact of the transistor. As such, a capacitance can develop between the gate electrode and the contact, depending on the dielectric constant of the interposed sidewall spacer. Accordingly, forming sidewall spacers out of oxide, which has a lower dielectric constant than nitride, mitigates capacitance that can otherwise develop between these features. Such capacitance is undesirable, at least, because it can inhibit transistor switching speeds. Accordingly, fashioning sidewall spacers as described herein can mitigate yield loss by reducing the number of devices that have unsatisfactory switching speeds and/or other undesirable performance characteristics. | 09-25-2008 |
| 20080268623 | SEMICONDUCTOR DOPING WITH IMPROVED ACTIVATION - A method is disclosed for doping a target area of a semiconductor substrate, such as a source or drain region of a transistor, with an electronically active dopant (such as an N-type dopant used to create active areas in NMOS devices, or a P-type dopant used to create active areas in PMOS devices) having a well-controlled placement profile and strong activation. The method comprises placing a carbon-containing diffusion suppressant in the target area at approximately 50% of the concentration of the dopant, and activating the dopant by an approximately 1,040 degree Celsius thermal anneal. In many cases, a thermal anneal at such a high temperature induces excessive diffusion of the dopant out of the target area, but this relative concentration of carbon produces a heretofore unexpected reduction in dopant diffusion during such a high-temperature thermal anneal. The disclosure also pertains to semiconductor components produced in this manner, and various embodiments and improvements of such methods for producing such components. | 10-30-2008 |
| 20090029516 | METHOD TO IMPROVE TRANSISTOR TOX USING HIGH-ANGLE IMPLANTS WITH NO ADDITIONAL MASKS - A method of forming an integrated circuit includes forming a gate structure over a semiconductor body, and forming a shadowing structure over the semiconductor body laterally spaced from the gate structure, thereby defining an active area in the semiconductor body therebetween. The method further includes performing an angled implant into the gate structure, wherein the shadowing structure substantially blocks dopant from the angled implant from implanting into the active area, and performing a source/drain implant into the gate structure and the active area. | 01-29-2009 |
| 20090057759 | MOS DEVICE AND PROCESS HAVING LOW RESISTANCE SILICIDE INTERFACE USING ADDITIONAL SOURCE/DRAIN IMPLANT - An integrated circuit (IC) includes a semiconductor substrate, a least one MOS transistor formed in or on the substrate, the MOS transistor including a source and drain doped with a first dopant type having a channel region of a second dopant type interposed between, and a gate electrode and a gate insulator over the channel region. A silicide layer forming a low resistance contact is at an interface region at a surface portion of the source and drain. At the interface region a chemical concentration of the first dopant is at least 5×10 | 03-05-2009 |
| 20090093095 | METHOD TO IMPROVE TRANSISTOR TOX USING SI RECESSING WITH NO ADDITIONAL MASKING STEPS - A method of forming a transistor device is provided wherein a gate structure is formed over a semiconductor body of a first conductivity type. The gate structure is formed comprising a protective cap thereover and defining source/drain regions laterally adjacent thereto. A first implant is performed of a second conductivity type into both the gate structure and the source/drain regions. The semiconductor body is etched to form recesses substantially aligned to the gate structure wherein the first implant is removed from the source/drain regions. Source/drain regions are implanted or grown by a selective epitaxial growth. | 04-09-2009 |
| 20090096031 | DIFFERENTIAL POLY DOPING AND CIRCUITS THEREFROM - A method of fabricating a CMOS integrated circuit and integrated circuits therefrom includes the steps of providing a substrate having a semiconductor surface, forming a gate dielectric layer on the semiconductor surface and a polysilicon including layer on the gate dielectric. A portion of the polysilicon layer is masked, and pre-gate etch implant of a first dopant type into an unmasked portion of the polysilicon layer is performed, wherein masked portions of the polysilicon layer are protected from the first dopant. The polysilicon layer is patterned to form a plurality of polysilicon gates and a plurality of polysilicon lines, wherein the masked portion includes at least one of the polysilicon lines which couple a polysilicon gate of a PMOS device to a polysilicon gate of an NMOS device. Fabrication of the integrated circuit is then completed, wherein the integrated circuit includes at least one first region formed in the masked portion lacking the first dopant in the polysilicon gates from the pre-gate etch implant and at least one second region formed in the unmasked portion having the first dopant in the polysilicon gates from the pre-gate etch implant. | 04-16-2009 |
| 20090098694 | CD GATE BIAS REDUCTION AND DIFFERENTIAL N+ POLY DOPING FOR CMOS CIRCUITS - A method of fabricating a CMOS integrated circuit includes the steps of providing a substrate having a semiconductor surface, forming a gate dielectric layer on the semiconductor surface and a polysilicon layer on the gate dielectric layer. The polysilicon layer is patterned while being undoped to form a plurality of polysilicon comprising gates. A first pattern is used to protect a plurality of PMOS devices and a first n-type implant is performed to dope the gates and source/drain regions for a plurality of NMOS devices. A second pattern is used to protect the PMOS devices and the sources/drains and gates for a portion of the plurality of NMOS devices and a second n-type implant is performed to dope the gates of the other NMOS devices. | 04-16-2009 |
| 20090098695 | DIFFERENTIAL OFFSET SPACER - A method of fabricating a CMOS integrated circuit includes the steps of providing a substrate having a semiconductor surface, forming a gate dielectric and a plurality of gate electrodes thereon in both NMOS and PMOS regions using the surface. A multi-layer offset spacer stack including a top layer and a compositionally different bottom layer is formed and the multi-layer spacer stack is etched to form offset spacers on sidewalls of the gate electrodes. The transistors designed to utilize a thinner offset spacer are covered with a first masking material, and transistors designed to utilize a thicker offset spacer are patterned and first implanted. At least a portion of the top layer is removed to leave the thinner offset spacers on sidewalls of the gate electrodes. The transistors designed to utilize the thicker offset spacer are covered with a second masking material, and the transistors designed to utilize the thinner offset spacer are patterned and second implanted. The fabrication of the integrated circuit is then completed. | 04-16-2009 |
| 20100109089 | MOS DEVICE AND PROCESS HAVING LOW RESISTANCE SILICIDE INTERFACE USING ADDITIONAL SOURCE/DRAIN IMPLANT - An integrated circuit (IC) includes a semiconductor substrate, a least one MOS transistor formed in or on the substrate, the MOS transistor including a source and drain doped with a first dopant type having a channel region of a second dopant type interposed between, and a gate electrode and a gate insulator over the channel region. A silicide layer forming a low resistance contact is at an interface region at a surface portion of the source and drain. At the interface region a chemical concentration of the first dopant is at least 5×10 | 05-06-2010 |
| 20100174513 | Characterization and Modeling of Ferroelectric Capacitors - Simulation of an electronic circuit including a model of a ferroelectric capacitor. The model of the ferroelectric capacitor includes a multi-domain ferroelectric capacitor, in which each of the domains is associated with a positive and a negative coercive voltage. A probability distribution function of positive and negative coercive voltages is defined, from which a weighting function of the distribution of domains having those coercive voltages is defined. The electrical behavior of the ferroelectric capacitor is evaluated by evaluating the polarization of each of the domains, as weighted by the weighting function. A time-dependent factor can be included in the polarization expression evaluated for each domain, to include the effect of relaxation. The effects of longer-term mechanisms, such as imprint, can be modeled by deriving a probability distribution function for the domains after an accelerated stress. | 07-08-2010 |
| 20100299115 | Modeling of Ferroelectric Capacitors to Include Local Statistical Variations of Ferroelectric Properties - Simulation of an electronic circuit including a model of a ferroelectric capacitor. The model of the ferroelectric capacitor includes a multi-domain ferroelectric capacitor, in which each of the domains is associated with a positive and a negative coercive voltage. A probability distribution function of positive and negative coercive voltages is defined, from which a weighting function of the distribution of domains having those coercive voltages is defined. To create a model of a small ferroelectric capacitor, a Poisson probability distribution is assigned to each of an array of gridcells defining the probability distribution function of positive and negative coercive voltages, and a number of domains assigned to each gridcell is randomly selected according to that Poisson distribution and an expected number of domains in the modeled capacitor for that gridcell, based on the area of the modeled capacitor. The electrical behavior of the ferroelectric capacitor is evaluated by evaluating the superposed polarization of each of the randomly selected domains. | 11-25-2010 |
| 20110027954 | METHOD TO IMPROVE TRANSISTOR TOX USING SI RECESSING WITH NO ADDITIONAL MASKING STEPS - A method of forming a transistor device is provided wherein a gate structure is formed over a semiconductor body of a first conductivity type. The gate structure is formed comprising a protective cap thereover and defining source/drain regions laterally adjacent thereto. A first implant is performed of a second conductivity type into both the gate structure and the source/drain regions. The semiconductor body is etched to form recesses substantially aligned to the gate structure wherein the first implant is removed from the source/drain regions. Source/drain regions are implanted or grown by a selective epitaxial growth. | 02-03-2011 |
