| Patent application number | Description | Published |
|---|
| 20090055114 | METHOD AND ARRANGEMENT FOR CORRECTING THERMALLY-INDUCED FIELD DEFORMATIONS OF A LITHOGRAPHICALLY EXPOSED SUBSTRATE - The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate. | 02-26-2009 |
| 20090055115 | METHOD AND ARRANGEMENT FOR PREDICTING THERMALLY-INDUCED DEFORMATION OF A SUBSTRATE, AND A SEMICONDUCTOR DEVICE - The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate. | 02-26-2009 |
| 20100321650 | LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and one or more elements to control and/or compensate for evaporation of liquid from the substrate. | 12-23-2010 |
| 20110205510 | Method and Apparatus for Controlling a Lithographic Apparatus - A lithographic exposure process is performed on a substrate using a scanner. The scanner comprises several subsystems. There are errors in the overlay arising from the subsystems during the exposure. The overlay errors are measured using a scatterometer to obtain overlay measurements. Modeling is performed to separately determine from the overlay measurements different subsets of estimated model parameters, for example field distortion model parameters, scan/step direction model parameters and position/deformation model parameters. Each subset is related to overlay errors arising from a corresponding specific subsystem of the lithographic apparatus. Finally, the exposure is controlled in the scanner by controlling a specific subsystem of the scanner using its corresponding subset of estimated model parameters. This results in a product wafer being exposed with a well controlled overlay. | 08-25-2011 |
| 20110205511 | Lithographic Apparatus and Device Manufacturing Method - A method controls scanning function of a lithographic apparatus. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Compensation is performed based on the determination. A different parameterization is used for control of the scanning control module than for communication between the scanning control module and the lithographic apparatus. | 08-25-2011 |
| 20110205513 | Lithographic Apparatus and Device Manufacturing Method - A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus, such that the initial exposure is performed while using non-standard alignment model settings optimized for accuracy, such as those used for testing the apparatus. An associated lithographic apparatus is also disclosed. | 08-25-2011 |
| 20110205515 | Calibration of Lithographic Apparatus - System parameters are checked through self-assessment of a production wafer without using a reference or a monitor wafer. In particular, the wafer is exposed at different orientations, the data from which provides for the calibration of system parameters. | 08-25-2011 |
| 20110205520 | Lithographic Apparatus and Device Manufacturing Method - A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer, thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus to perform multiple exposure passes on each of the monitor wafer(s). An associated lithographic apparatus is also disclosed. | 08-25-2011 |
