Bonnetier

Armand Bonnetier, Orange FR

Patent application number	Description	Published
20090093666	Vitrification Furnace With Dual Heating Means - Process for combustion and vitrification of waste in which at least one oxygen plasma jet is associated with a continuous melting device by high frequency direct induction. The crucible is composed of a continuous external shell and a sole plate, both cooled by a liquid circulating in internal channels. The inductor is placed below the sole plate. There is a gravity drain valve at the bottom or on the side.	04-09-2009

Patent application number	Description	Published
20100007357	Electrical Impedance Tomography Method and Device - Electrical impedance tomography method comprising: an electrical measurement step during which pre-determined electrical conditions are imposed on the surface of a medium to be imaged, while generating a mechanical disturbance at predefined points of the medium by locally modifying the impedance of the medium and an electrical parameter is measured at several points on the surface of the medium; and a calculation step during which the electrical impedance is determined at several points in the internal volume of the medium, taking into account the measurements carried out during the disturbance, as a function of a law for modification of the electrical impedance by this disturbance.	01-14-2010

Patent application number	Description	Published
20100151677	ETCH METHOD IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE - The present invention provides a method for forming a transistor on a silicon substrate, the method comprising: providing a substrate comprising: a gate electrode with a liner comprising silicon and oxygen, and with a sidewall spacer, and source and/or drain region(s) in the substrate adjacent to the gate electrode, a layer at least 5 nm thick comprising silicon dioxide covering at least the source and/or drain regions; etching the layer comprising silicon and oxygen from at least the source and/or drain regions; and forming contacts for the source and/or drain region(s), characterized in that the layer comprising silicon and oxygen is etched from the substrate by steps comprising: forming an etchant from a plasma formed from a mixture comprising nitrogen trifluoride and ammonia; exposing the substrate to the etchant; and annealing the substrate.	06-17-2010