| Patent application number | Description | Published |
|---|
| 20090231948 | Data output circuit having shared data output control unit - A data output circuit is provided which is capable of reducing a size and current consumption by commonly using a data output control unit for a plurality of data output units. The data output circuit includes a data output control unit for receiving an external clock signal and generate clock pulses having a pulse width, a first data output unit for outputting first data in synchronization with the clock pulse, and a second data output unit for outputting second data in synchronization with the clock pulses. | 09-17-2009 |
| 20100085815 | Command Generation circuit and semiconductor memory device - There is provided a command generation circuit. The command generation circuit includes a first driving unit driving an output node in response to an internal MRS command and a RAS idle signal; a second driving unit driving the output node in response to an off-signal; and a latch unit latching a signal at the output node in response to a power-up signal and generating an SRR command. | 04-08-2010 |
| 20100246279 | Pipe latch circuit and semiconductor memory device using the same - A pipe latch circuit comprises a reset signal generating unit which receives a read-write flag signal and a read period signal and generates a reset signal, wherein the reset signal is enabled upon entry into a write operation or after all data are outputted to an outside upon read operation, an input/output control signal generating unit which generates a plurality of input control signals and output control signals in response to a read strobe signal and a clock signal, and is reset in response to the reset signal, and a pipe latch unit which latches inputted data in response to the input control signals and outputs the latched data in response to the output control signals. | 09-30-2010 |
| 20100329039 | DATA BUFFER CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS INCLUDING THE SAME - A data buffer control circuit and a semiconductor memory apparatus including the same are presented. The data buffer control circuit may include an internal command signal generator and a buffer enable signal generator. The internal command signal generator is configured to generate an internal command signal that is activated if delayed command signals are conditioned in a predetermined state of level combination. The buffer enable signal generator is configured to generate a buffer enable signal, which enables a data buffer receiving data in a writing mode, from the internal command signal in sync with a falling edge of an internal clock signal. | 12-30-2010 |
| Patent application number | Description | Published |
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| 20090006914 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF DETECTING FAIL PATH THEREOF - Disclosed is a semiconductor integrated circuit that allows a fail path to be detected. A semiconductor integrated circuit as described herein can be configured to include a data register that can receive input data to generate and store a write expectation value and a read expectation value, during a period in which a test mode is activated, a first comparing unit that compares write data written in a memory cell with the write expectation value, and a second comparing unit that compares read data read from the memory cell with the read expectation value. | 01-01-2009 |
| 20090015309 | DATA OUTPUT CLOCK SIGNAL GENERATING APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT WITH THE SAME - A data clock control apparatus includes a bias voltage generator configured to receive a plurality of test mode signals and a plurality of fuse signals and to generate a bias voltage to secure a predetermined potential difference from an external driving power supply, and a clock signal controller configured to receive the bias voltage and to buffer an external clock signal and outputs a data output clock signal. | 01-15-2009 |
| 20090059708 | SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING BANK SELECTION CONTROL BLOCK - A semiconductor integrated circuit according to one embodiment can include an up bank block that includes a first group of banks, a down bank block that includes a second group of banks, and a bank selection control block that provides up and down bank even-numbered global line control signals, up and down bank odd-numbered global line control signals, and up and down bank SDRAM write global line control signals in response to first and second group read control signals and a bank information signal in the up bank block and the down bank block. In this case, the bank selection control block may respond to a DDR signal and an SDR signal that are provided from an MRS (Mode Register Set). | 03-05-2009 |
| 20090261889 | DATA OUTPUT CLOCK SIGNAL GENERATING APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT WITH THE SAME - A data clock control apparatus includes a bias voltage generator configured to receive a plurality of test mode signals and a plurality of fuse signals and to generate a bias voltage to secure a predetermined potential difference from an external driving power supply, and a clock signal controller configured to receive the bias voltage and to buffer an external clock signal and outputs a data output clock signal. | 10-22-2009 |
