| Patent application number | Description | Published |
|---|
| 20080206993 | Using Spectra to Determine Polishing Endpoints - Methods of determining a polishing endpoint are described using spectra obtained during a polishing sequence. In particular, techniques for using only desired spectra, faster searching methods and more robust rate determination methods are described. | 08-28-2008 |
| 20080239308 | HIGH THROUGHPUT MEASUREMENT SYSTEM - A substrate processing system includes a processing module to process a substrate, a factory interface module configured to accommodate at least one cassette for holding the substrate, a spectrographic monitoring system positioned in or adjoining the factory interface module, and a substrate handler to transfer the substrate between the at least one cassette, the spectrographic monitoring system and the processing module. | 10-02-2008 |
| 20080243433 | METHODS AND APPARATUS FOR GENERATING A LIBRARY OF SPECTRA - A method of generating a library from a reference substrate for use in processing product wafers is described. The method includes measuring substrate characteristics at a plurality of well-defined points of a reference substrate, measuring spectra at plurality of measurement points of the reference substrate, there being more measurement points than well-defined points, and associating measured spectra with measured substrate characteristics. | 10-02-2008 |
| 20080305729 | THIN POLISHING PAD WITH WINDOW AND MOLDING PROCESS - A polishing pad is described that has a polishing layer with a polishing surface, an adhesive layer on a side of the polishing layer opposite the polishing layer, and a solid light-transmitting window extending through and molded to the polishing layer. The window has a top surface coplanar with the polishing surface and a bottom surface coplanar with a lower surface of the adhesive layer. A method of making a polishing pad includes forming an aperture through a polishing layer and an adhesive layer, securing a backing piece to the adhesive layer on a side opposite a polishing surface of the polishing layer, dispensing a liquid polymer into the aperture, and curing the liquid polymer to form a window. | 12-11-2008 |
| 20090017726 | SPECTRA BASED ENDPOINTING FOR CHEMICAL MECHANICAL POLISHING - Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting two or more reference spectra. Each reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectra is selected for particular spectra-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectra-based endpoint logic. The method includes obtaining two or more current spectra. Each current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. | 01-15-2009 |
| 20090033942 | Determining Physical Property of Substrate - A method of determining a physical property of a substrate includes recording a first spectrum obtained from a substrate, the first spectrum being obtained during a polishing process that alters a physical property of the substrate. The method includes identifying, in a database, at least one of several previously recorded spectra that is similar to the recorded first spectrum. Each of the spectra in the database has a physical property value associated therewith. The method includes generating a signal indicating that a first value of the physical property is associated with the first spectrum, the first value being determined using the physical property value associated with the identified previously recorded spectrum in the database. A system for determining a physical property of a substrate includes a polishing machine, an endpoint determining module, and a database. | 02-05-2009 |
| 20090036026 | SUBSTRATE THICKNESS MEASURING DURING POLISHING - A computer program product that determines a polishing endpoint includes obtaining spectra from different zones on a substrate during different times in a polishing sequence, matches the spectra with indexes in a library and uses the indexes to determining a polishing rate for each of the different zones from the indexes. An adjusted polishing rate can be determined for one of the zones, which causes the substrate to have a desired profile when the polishing end time is reached. | 02-05-2009 |
| 20090149115 | WAFER EDGE CHARACTERIZATION BY SUCCESSIVE RADIUS MEASUREMENTS - Systems and methods for performing one or more measurements of a substrate at one or more radii along the substrate are described. Thickness measurements taken at various radii along the substrate can be averaged together to obtain an average value that reflects an overall substrate thickness. A more accurate measurement of the overall substrate thickness can be obtained by performing multiple measurements and averaging the measurements together. Using the average value, polishing can be adjusted to ensure that the substrate achieves a desired planarized thickness profile. | 06-11-2009 |
| 20090156098 | Automatic Gain Control - Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includes a light source and a light detector. The light source emits light, and light emitted from the light source is directed through the first portion and to a surface of the film being polished. Light reflecting from the surface of the film being polished and passing through the first portion is received at the light detector. An electronic signal is generated based on the light received at the light detector. When the electronic signal is evaluated not to satisfy one or more constraints, a gain for the light detector is adjusted so that the electronic signal would satisfy the one or more constraints. | 06-18-2009 |
| 20090253351 | FRICTION SENSOR FOR POLISHING SYSTEM - A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer. | 10-08-2009 |
| 20090262353 | METHODS AND APPARATUS FOR MEASURING SUBSTRATE EDGE THICKNESS DURING POLISHING - Systems, methods and apparatus are provided for determining a substrate polishing endpoint. The invention includes a light source adapted to transmit light to an edge of a substrate; one or more detectors adapted to detect an arrangement of light reflected from the substrate edge; and a controller adapted to determine a polishing endpoint for the substrate edge based on the arrangement of reflected light. Numerous other aspects are provided. | 10-22-2009 |
| 20090305610 | MULTIPLE WINDOW PAD ASSEMBLY - A method and apparatus for detecting and obtaining a metric indicative of a polishing process is described. The apparatus includes a polishing pad having an optically transparent region adapted to obtain polishing metric from at least one substrate from at least two distinct radial positions of the polishing pad. The method includes obtaining a polishing metric from at least two substrates being polished simultaneously on a single polishing pad. | 12-10-2009 |
| 20100056023 | Adjusting Polishing Rates by Using Spectrographic Monitoring of a Substrate During Processing - A computer-implemented method includes receiving a sequence of current spectra of reflected light from a substrate; comparing each current spectrum from the sequence of current spectra to a plurality of reference spectra from a reference spectra library to generate a sequence of best-match reference spectra; determining a goodness of fit for the sequence of best-match reference spectra; and determining at least one of whether to adjust a polishing rate or an adjustment for the polishing rate, based on the goodness of fit. | 03-04-2010 |
| 20100103422 | GOODNESS OF FIT IN SPECTROGRAPHIC MONITORING OF A SUBSTRATE DURING PROCESSING - A sequence of current spectra is obtained with an in-situ optical monitoring system, and each current spectrum is compared to a plurality of reference spectra from a plurality of reference spectra libraries. The library that provides a best fit to the sequence of current spectra is determined, and a polishing endpoint is determined based on the sequence of current spectra and the library that provides a best fit to the sequence of current spectra. | 04-29-2010 |
| 20100105288 | MULTIPLE LIBRARIES FOR SPECTROGRAPHIC MONITORING OF ZONES OF A SUBSTRATE DURING PROCESSING - Methods, systems, and apparatus, including computer program products, for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes receiving a first sequence of current spectra of reflected light from a first zone of a substrate. A second sequence of current spectra of reflected light from a second zone of the substrate is received. Each current spectrum from the first sequence of current spectra is compared to a plurality of reference spectra from a first reference spectra library to generate a first sequence of best-match reference spectra. Each current spectrum from the second sequence of current spectra is compared to a plurality of reference spectra from a second reference spectra library to generate a second sequence of best-match reference spectra. The second reference spectra library is distinct from the first reference spectra library. | 04-29-2010 |
| 20100114532 | WEIGHTED SPECTROGRAPHIC MONITORING OF A SUBSTRATE DURING PROCESSING - A substrate having an outermost layer undergoing polishing and at least one underlying layer is irradiated with light. A sequence of current spectra is obtained with an in-situ optical monitoring system, a current spectrum from the sequence of current spectra being a spectrum of the light reflected from the substrate, wherein the current spectrum includes a range of wavelengths and, for all wavelengths in the range of wavelengths, a value corresponding to a wavelength. Further, a value of the current spectrum corresponding to a wavelength is modified with at least one value in a gain factor spectrum, wherein the gain factor spectrum includes a first range of wavelengths and, for all wavelengths in the first range of wavelengths, a value corresponding to a wavelength. The polishing of the outermost layer of the substrate is then changed based upon the modified value of the current spectrum. | 05-06-2010 |
| 20100120330 | ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING - A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment. | 05-13-2010 |
| 20100120331 | ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING - A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected time at which each substrate will reach a target thickness is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates reach the target thickness closer to the same time than without the adjustment. | 05-13-2010 |
| 20100120333 | In-Line Wafer Thickness Sensing - A method of forming bare silicon substrates is described. A bare silicon substrate is measured, wherein measuring is performed by a non-contact capacitance measurement device to obtain a signal at a point on the substrate. The signal or a thickness indicated by the signal is communicated to a controller. An adjusted polishing parameter according to the signal or thickness indicated by the signal is determined. After determining an adjusted polishing parameter, the bare silicon substrate is polished on a polisher using the adjusted polishing parameter. | 05-13-2010 |
| 20100124792 | EDDY CURRENT SENSOR WITH ENHANCED EDGE RESOLUTION - An apparatus for monitoring the thickness of a conductive layer on a substrate includes a support to hold a substrate having a conductive layer, an eddy current monitoring system including a first plurality of core portions, and a motor to cause relative motion between the support and the eddy current monitoring system such that the substrate moves across the first plurality of core portions in a direction that defines a first axis. At least one core portion is positioned further from a second axis than at least two other core portions. The second axis is orthogonal to the first axis. | 05-20-2010 |
| 20100124870 | Semi-Quantitative Thickness Determination - While a substrate is polished, it is also irradiated with light from a light source. A current spectrum of the light reflected from the surface of the substrate is measured. A selected peak, having a first parameter value, is identified in the current spectrum. A value of a second parameter associated with the first parameter is determined from a lookup table using a processor. Depending on the value of the second parameter, the polishing of the substrate is changed. An initial spectrum of light reflected from the substrate before the polishing of the substrate can be measured and a wavelength corresponding to a selected peak of the initial spectrum can be determined. | 05-20-2010 |
| 20100129939 | USING OPTICAL METROLOGY FOR WITHIN WAFER FEED FORWARD PROCESS CONTROL - A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of a second set of parameters based on the difference, and polishing the substrate on a second platen using the adjusted parameter. | 05-27-2010 |
| 20100130100 | USING OPTICAL METROLOGY FOR WAFER TO WAFER FEED BACK PROCESS CONTROL - A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of the first set of parameters based on the difference, and polishing the second substrate on the first platen using the adjusted parameter. | 05-27-2010 |
| 20100184357 | Polishing Pad and System with Window Support - A polishing system includes a polishing pad having a solid light-transmissive window, an optical fiber having an end, and a spacer having a vertical aperture therethrough. A bottom surface of the spacer contacts the end of the optical fiber, a top surface of the spacer contacts the underside of the window, and the vertical aperture is aligned with the optical fiber. | 07-22-2010 |
| 20100185314 | GST Film Thickness Monitoring - In polishing a substrate having a layer of GST disposed over an underlying layer, during polishing, a non-polarized light beam is directed onto the layer of GST. The non-polarized light beam reflects from the first substrate to generate a reflected light beam having an infra-red component. A sequence of measurements of intensity of the infra-red component of the reflected light beam are generated, and, in a processor, a time at which the sequence of measurements exhibits a predefined feature is determined. | 07-22-2010 |
| 20100217430 | SPECTROGRAPHIC MONITORING OF A SUBSTRATE DURING PROCESSING USING INDEX VALUES - Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index. | 08-26-2010 |
| 20100261413 | Determining Physical Property of Substrate - A method of determining a physical property of a substrate includes recording a first spectrum obtained from a substrate, the first spectrum being obtained during a polishing process that alters a physical property of the substrate. The method includes identifying, in a database, at least one of several previously recorded spectra that is similar to the recorded first spectrum. Each of the spectra in the database has a physical property value associated therewith. The method includes generating a signal indicating that a first value of the physical property is associated with the first spectrum, the first value being determined using the physical property value associated with the identified previously recorded spectrum in the database. A system for determining a physical property of a substrate includes a polishing machine, an endpoint determining module, and a database. | 10-14-2010 |
| 20100269417 | TREATMENT OF POLISHING PAD WINDOW - A window of solid light-transmissive polymer is formed in a polishing pad, and at least one surface of the window is treated to increase the smoothness of the at least one surface. | 10-28-2010 |
| 20100297916 | METHODS OF USING OPTICAL METROLOGY FOR FEED BACK AND FEED FORWARD PROCESS CONTROL - A method includes polishing a substrate on a first platen using a first set of parameters, obtaining a plurality of measured spectra from at least two zones, comparing the plurality of measured spectra with a reference spectrum to evaluate the thickness of each of the at least two zones of the substrate, comparing a thickness of a first zone with a thickness of a second zone, determining whether the thickness of the first zone falls within a predetermined range of the thickness of the second zone, and if the thickness does not fall within the predetermined range, at least one of a) adjusting at least one parameter of the first set and polishing a second substrate on the first platen using the adjusted parameters, or b) adjusting at least one parameter of a second set and polishing the substrate on a second platen using the adjusted parameters. | 11-25-2010 |
| 20110046918 | METHODS AND APPARATUS FOR GENERATING A LIBRARY OF SPECTRA - A method of generating a library from a reference substrate for use in processing product wafers is described. The method includes measuring substrate characteristics at a plurality of well-defined points of a reference substrate, measuring spectra at plurality of measurement points of the reference substrate, there being more measurement points than well-defined points, and associating measured spectra with measured substrate characteristics. | 02-24-2011 |
| 20110104987 | ENDPOINT METHOD USING PEAK LOCATION OF SPECTRA CONTOUR PLOTS VERSUS TIME - In one aspect, a method of polishing includes polishing a substrate, and receiving an identification of a selected spectral feature and a characteristic of the selected spectral feature to monitor during polishing. The method includes measuring a sequence of spectra of light reflected from the substrate while the substrate is being polished, where at least some of the spectra of the sequence differ due to material being removed during the polishing. The method of polishing includes determining a value of a characteristic of the selected spectral feature for each of the spectra in the sequence of spectra to generate a sequence of values for the characteristic, fitting a function to the sequence of values, and determining either a polishing endpoint or an adjustment for a polishing rate based on the function. | 05-05-2011 |
