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Bodke
Arjun Bodke, Shantinagar IN
| Patent application number | Description | Published |
|---|---|---|
| 20100280077 | Process for Preparation of Stable Amorphous R-Lansoprazole - A process for preparing stable amorphous R-(+)-lansoprazole comprising optically resolving racemic lansoprazole by the formation of host-guest inclusion complexes by selectively and reversibly including chiral guest molecules in the lansoprazole. | 11-04-2010 |
Ashish Bodke, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090050468 | CONTROLLED SURFACE OXIDATION OF ALUMINUM INTERCONNECT - An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber. | 02-26-2009 |
Ashish S. Bodke, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090239378 | METHODS FOR FORMING A TITANIUM NITRIDE LAYER - Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supplying a nitrogen-containing gas into the processing chamber; sputtering a titanium source material from the target in the presence of a plasma formed from the nitrogen-containing gas to deposit a titanium nitride layer on the substrate; and upon depositing the titanium nitride layer to a desired thickness, forming a magnetic field that biases ions in the processing chamber away from the substrate. | 09-24-2009 |
Ashish Subhash Bodke, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100006425 | METHODS OF FORMING A LAYER FOR BARRIER APPLICATIONS IN AN INTERCONNECT STRUCTURE - Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber. | 01-14-2010 |