| Patent application number | Description | Published |
|---|
| 20090161123 | METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES - A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure. | 06-25-2009 |
| 20100121627 | METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES - A method of preparation of reference data for measuring the profile of a patterned structure for use in control of a manufacturing process, the method including: providing a model for generating profiles based on the manufacturing process; generating the profiles by simulation of the manufacturing process; and preparing diffraction signal reference data corresponding to the generated profiles. | 05-13-2010 |
| 20100181490 | OPTICAL METHOD AND SYSTEM UTILIZING OPERATING WITH DEEP OR VACUUM UV SPECTRA - An apparatus and method are presented for use in optical processing of an article. The apparatus comprises: one or more optical windows for directing predetermined electromagnetic radiation therethrough to illuminate a region of interest and collecting radiation returned from the illuminated region; and two or more ports operable for inputting or discharging one or more gases from the vicinity of the region of interest on the article being processed to create in the vicinity of said region a substantially static state of environment, non-absorbable for said electromagnetic radiation, thereby reducing amount of ambient gas in the vicinity of said region of interest and enabling optical processing of the article while maintaining it in the ambient gas environment. | 07-22-2010 |
| 20100214566 | LATERAL SHIFT MEASUREMENT USING AN OPTICAL TECHNIQUE - Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers. | 08-26-2010 |
| 20100280807 | METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES - A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure. | 11-04-2010 |
| 20100280808 | METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES - A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure. | 11-04-2010 |
| 20100324865 | METHOD AND SYSTEM FOR MEASURING PATTERNED STRUCTURES - A method and system are presented for determining a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure. | 12-23-2010 |
| 20110037988 | LINE EDGE ROUGHNESS MEASURING TECHNIQUE AND TEST STRUCTURE - A test structure is presented test structure on a substrate for monitoring a LER and/or LWR effect, said test structure comprising an array of features manufactured with amplified LER and/or LWR effect. | 02-17-2011 |
