Patent application number | Description | Published |
20110303290 | METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT SURFACE QUALITY USING INERT GAS BLOWING - The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm | 12-15-2011 |
20110305891 | METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT PRODUCTIVITY AND SURFACE QUALITY USING CONTINUOUS CASTING - The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, and a method for manufacturing a silicon substrate using the same. The apparatus includes a raw silicon feeder, a silicon melting unit melting raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer board transferring the tapped silicon melt, and a silicon substrate forming unit cooling the silicon melt transferred by the transfer board to form a silicon substrate. The molten silicon stored in the molten silicon storage unit has a surface temperature of 1300˜1500° C., the transfer board is preheated to 700˜1400° C., and a transfer time of the silicon substrate after tapping the molten silicon from the molten silicon storage unit is 0.5˜3.5 seconds. | 12-15-2011 |
20120009120 | THERMAL CRACKING RESISTANT ZEOLITE MEMBRANE AND METHOD OF FABRICATING THE SAME - The present disclosure relates to a thermal cracking resistant zeolite membrane and a method of fabricating the same. The method includes dissolving an alumina-based material, a silica-based material and sodium hydroxide in water to prepare an aqueous solution, stirring the aqueous solution to form a hydrothermal solution, preparing a slurry of zeolite seeds through wet-type vibration pulverization and centrifugal separation of zeolite powder, passing the zeolite seeds through a support by vacuum filtration such that the zeolite seeds can be infiltrated into an inner region of the support ranging from a depth of 3 μm to a depth corresponding to 50% of a total thickness of the support, and immersing the support into the hydrothermal solution for hydrothermal treatment to grow a dense zeolite separation layer not only on the surface of the support but also on the inner region thereof. The zeolite membrane prevents the occurrence of thermal cracking on the zeolite separation layer, thereby providing good thermal stability and separation performance during heating and at a target processing temperature. | 01-12-2012 |
20120261694 | ALUMINUM DEFICIENT alpha-SiAION PHOSPHORS, METHOD OF PREPARING THE SAME, AND LED CHIP PACKAGE USING THE SAME - The present disclosure provides α-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca | 10-18-2012 |
20120288418 | REUSABLE DUAL CRUCIBLE FOR SILICON MELTING AND MANUFACTURING APPARATUS OF SILICON SLIM PLATE INCLUDING THE SAME - A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein. | 11-15-2012 |
20120292825 | APPARATUS FOR MANUFACTURING SILICON SUBSTRATE FOR SOLAR CELL USING CONTINUOUS CASTING FACILITATING TEMPERATURE CONTROL AND METHOD OF MANUFACTURING SILICON SUBSTRATE USING THE SAME - The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate. | 11-22-2012 |
20130067959 | A GRAPHITE CRUCIBLE FOR SILICON ELECTROMAGNETIC INDUCTION HEATING AND APPARATUS FOR SILICON MELTING AND REFINING USING THE GRAPHITE CRUCIBLE - The present disclosure provides a graphite crucible induction-based silicon melting. The graphite crucible comprises a cylindrical body having a plurality of slits which is formed through an outer wall and an inner wall of the cylindrical body and a bottom part connected with an edge of the cylindrical body to seal an end of the cylindrical body. | 03-21-2013 |
20130263777 | APPARATUS FOR MANUFACTURING SILICON SUBSTRATE - There is disclosed an apparatus for manufacturing a silicon substrate including a crucible part, a molding part extended from an outlet of the crucible part, the molding part comprising a molding space where a silicon substrate is formed, and a dummy bar inserted in the molding space from a predetermined portion of the molding part, wherein the dummy bar is formed of a single-crystalline material. | 10-10-2013 |
20130291595 | APPARATUS FOR MANUFACTURING HIGH PURITY POLYSILICON USING ELECTRON-BEAM MELTING AND METHOD OF MANUFACTURING HIGH PURITY POLYSILICON USING THE SAME - Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction. | 11-07-2013 |
20130291596 | APPARATUS FOR MANUFACTURING POLYSILICON BASED ELECTRON-BEAM MELTING USING DUMMY BAR AND METHOD OF MANUFACTURING POLYSILICON USING THE SAME - Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar. | 11-07-2013 |
20130323594 | METHOD OF PRODUCING HIGH PURITY SiOx NANOPARTICLES WITH EXCELLENT VOLATILITY AND APPARATUS FOR PRODUCING THE SAME - The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas. | 12-05-2013 |
20140301910 | APPARATUS FOR PREPARING SILICON NANOPARTICLE USING ICP - Disclosed is an apparatus for preparing silicon nanoparticles. The apparatus includes a corona discharge section charging silicon nanoparticles to exhibit unipolarity in order to prevent agglomeration of the silicon nanoparticles after the silicon nanoparticles are generated from an injected gas by plasma reaction of an inductively coupled plasma (ICP) coil. The apparatus may facilitate grain size control of silicon nanoparticles while improving discharge performance of a mesh filter for collection of generated nanoparticles by preventing agglomeration of the silicon nanoparticles generated by plasma reaction using inductively coupled plasma (ICP), and may permit replacement of the mesh filter even during operation of the apparatus, thereby improving productivity while reducing manufacturing costs. | 10-09-2014 |