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Bo-Young
Bo Young Kim, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090253855 | Polycarbonate-Polysiloxane Copolymer Resin Composition with High Impact Strength at Low Temperature and Mechanical Strength and Method for Preparing the Same - Disclosed herein is a polycarbonate-polysiloxane copolymer resin composition comprising: (A) about 100 parts by weight of a thermoplastic polycarbonate resin; and (B) about 0.1 to about 30 parts by weight of an organic siloxane polymer having a primary amine group. The polycarbonate-polysiloxane copolymer resin composition has high impact strength at low temperature and high mechanical strength. | 10-08-2009 |
| 20100106404 | METHOD FOR MANAGING SCHEDULE USING USER'S LOCATION INFORMATION AND SYSTEM THEREOF - A method for managing a schedule using a user's location information includes: registering a schedule which includes the user's location information; detecting the user's location; and sending a message related to the schedule or the user's location. | 04-29-2010 |
Bo Young Lee, Goyang-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20100091930 | APPARATUS FOR FORMING STRESS CORROSION CRACKS - An apparatus for forming stress corrosion cracks comprises a heating unit which includes a conductive member and a heating coil disposed adjacent to the conductive member to generate steam pressure in the tube specimen, an end holding unit, and a control unit for controlling the heating unit and the end holding unit. The stress corrosion cracks occurring in the equipment of nuclear power plants or apparatus industries during operation can be directly formed in a tube specimen using steam pressure under conditions similar to those of the actual environment of nuclear power plants, thus increasing accuracy for analysis of properties of stress corrosion cracks which are in actuality generated, thereby improving reliability of nuclear power plants or apparatus industries and effectively assuring nondestructive testing capability, resulting in very useful industrial applicability. | 04-15-2010 |
| 20100109211 | APPARATUS FOR FORMING LONGITUDINAL THERMAL-FATIGUE CRACKS - An apparatus for forming longitudinal thermal fatigue cracks. A heating unit has an induction coil disposed adjacent to an outer circumference of one side of a tubular test piece, on an inner surface of which a notch is formed. A cooling unit has a cooling water pump and a cooling water hose which forcibly injects cooling water from a cooling water storage source into an inner circumference of the tubular test piece. A control unit controls operation of the heating and cooling units. A cooling block partially encloses the outer circumference of the tubular test piece so as to control a magnitude of y-axial stress, is supplied with a cooling source of fluid or gas from an outside so as to repetitively cool the tubular test piece heated by the heating unit to adjust a temperature gradient, and has a longitudinal slit for controlling crack positions. | 05-06-2010 |
Bo Young Park, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20090148542 | Composition comprising an extract of tiarella polyphylla and tiarellic acid isolated therefrom having antiinflammatory, antiallergic and antiasthmatic activity - The present invention relates to a composition comprising an extract of | 06-11-2009 |
| 20090324750 | PHARMACEUTICAL COMPOSITION COMPRISING AN EXTRACT OF PSEUDOLYSIMACHION LONGIFOLIUM AND THE CATALPOL DERIVATIVES ISOLATED THEREFROM HAVING ANTIINFLAMMATORY, ANTIALLERGIC AND ANTIASTHMATIC ACTIVITY - The present invention relates to a composition comprising an extract of | 12-31-2009 |
Bo-Young Ahn, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090061465 | COMPOSITION FOR ANALYZING DIABETES MELLITUS AND/OR RETINAL VASCULAR DISEASE AND ANALYZING METHOD THEREOF - Disclosed are composition for diagnosing a diabetes mellitus and a retinal vascular disease, a kit for diagnosing the retinal vascular disease including the protein, a gene encoding the protein, and a method for analyzing an antibody prepared by the diabetes mellitus and/or the retinal vascular disease using the same. | 03-05-2009 |
| 20090286233 | Method for Diagnosing Diabetic Retinopathy by Single Nucleotide Polymorphism, DNA Fragment Thereof, and Primer Thereof - Disclosed is a method for diagnosing diabetic retinopathy by a single nucleotide polymorphism of VEGF and its receptor. | 11-19-2009 |
| 20100112013 | Adjuvant comprising oligonucleotide and non-toxic lipopolysaccharide - Disclosed is an adjuvant composition of the present invention including the oligodeoxynucleotides and the LPS-derived non-toxic polysaccharides as the major components. | 05-06-2010 |
Bo-Young Chang, Changwon KR
| Patent application number | Description | Published |
|---|---|---|
| 20080216518 | FOREIGN MATERIALS FILTERING APPARATUS AND WASHING MACHINE HAVING THE SAME - In a foreign materials filtering apparatus and a washing machine having the same, a filter unit is not exposed to inside of a washing tub thus not to directly come in contact with laundry, thereby preventing the filter unit and laundry from being damaged and enhancing the entire appearance. Also, the foreign materials filtering apparatus is modularized to facilitate a detachable mounting, thereby enhancing the user's convenience. Additionally, the amount of washing water passing through the foreign materials filtering apparatus is increased by controlling a flowing direction of washing water. Furthermore, foreign materials of washing water are prevented from being introduced into a gap between a washing water circulating duct and a filter unit, thereby enhancing a washing effect. | 09-11-2008 |
| 20080216519 | FOREIGN MATERIALS FILTERING APPARATUS AND WASHING MACHINE HAVING THE SAME - In a foreign materials filtering apparatus and a washing machine having the same, a filter cover is installed at a washing water circulating duct disposed inside a washing tub, and a net filter is installed at an inner side of the filter cover. Accordingly, the net filter is prevented from directly contacting laundry, thereby preventing the not filter and the laundry from being damaged. Furthermore, since the net filter is covered by the filter cover, the entire appearance is enhanced. Additionally, when the net filter is mounted at the filter cover, the filter unit becomes modularized to be facilitate a detachable mounting. | 09-11-2008 |
| 20080216520 | FOREIGN MATERIALS FILTERING APPARATUS AND WASHING MACHINE HAVING THE SAME - Disclosed are a foreign materials filtering apparatus and a washing machine having the same. Since a filter cover unit and a filter unit are integrally modularized with each other, a user can separate or mount the filter unit from/to a washing water circulating duct by separating or mounting the filter cover unit from/to the washing water circulating duct. Accordingly, the foreign materials filtering apparatus can be easily detachably mounted at the washing water circulating duct. | 09-11-2008 |
| 20080216522 | FOREIGN MATERIALS FILTERING APPARATUS AND WASHING MACHINE HAVING THE SAME - In a foreign materials filtering apparatus and a washing machine having the same, owing to a detachable mounting structure between a handle and a front filter and between a rear filter and the front filter, foreign materials collected in a foreign materials filtering space can be easily cleaned. Accordingly, can be solved the conventional problem that a net filter has to be kept inside out at the time of a cleaning process, resulting in causing a user's hands to become dirty. Also, can be solved the conventional problem that there is a difficulty in removing foreign materials from the net filter due to a fibrous characteristic of the net filter. | 09-11-2008 |
| 20080216523 | FOREIGN MATERIALS FILTERING APPARATUS - In a foreign materials filtering apparatus for a washing machine, a filter unit is not exposed to inside of a washing tub thus not to directly come in contact with laundry. Accordingly, the filter unit and laundry are prevented from being damaged, and the entire appearance is enhanced. Additionally, the foreign materials filtering apparatus is modularized to facilitate a detachable mounting, thereby enhancing the user's convenience. | 09-11-2008 |
| 20080217243 | METHOD FOR CLEANING FOREIGN MATERIALS FILTERING APPARATUS - In a method for cleaning the foreign materials filtering, foreign materials collected in a foreign materials filtering space can be easily removed under a filter unit is separated from or is mounted at a filter cover unit. As a result, can be solved the conventional problems that a net filter has to be kept inside out at the time of a cleaning process to cause a user's hands to become dirty, and there is a difficulty in removing foreign materials from the net filter due to a fibrous characteristic of the net filter. Accordingly, a cleaning operation for the foreign materials filtering apparatus can be facilitated. | 09-11-2008 |
Bo-Young Lee, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20120061763 | METHODS OF FORMING NON-VOLATILE MEMORY DEVICES INCLUDING LOW-K DIELECTRIC GAPS IN SUBSTRATES AND DEVICES SO FORMED - A method of manufacturing a non-volatile memory device, can be provided by forming a gate insulating layer and a gate conductive layer on a substrate that includes active regions that are defined by device isolation regions that include a carbon-containing silicon oxide layer. The gate conductive layer and the gate insulating layer can be sequentially etched to expose the carbon-containing silicon oxide layer. The carbon-containing silicon oxide layer can be wet-etched to recess a surface of the carbon-containing silicon oxide layer to below a surface of the substrate. Then, an interlayer insulating layer can be formed between the gate insulating layer and the gate conductive layer on the carbon-containing silicon oxide layer, where an air gap can be formed between the carbon-containing silicon oxide layer and the gate insulating layer. | 03-15-2012 |
Bo-Young Lee, Hwaseong-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100230741 | SEMICONDUCTOR DEVICES WITH AN AIR GAP IN TRENCH ISOLATION DIELECTRIC - A tunnel insulating layer and a charge storage layer are sequentially stacked on a substrate. A recess region penetrates the charge storage layer, the tunnel insulating layer and a portion of the substrate. The recess region is defined by a bottom surface and a side surface extending from the bottom surface. A first dielectric pattern includes a bottom portion covering the bottom surface and inner walls extending from the bottom portion and covering a portion of the side surface of the recess region. A second dielectric pattern is in the recess region between the inner walls of the first dielectric pattern, and the second dielectric pattern enclosing an air gap. The air gap that is enclosed by the second dielectric pattern may extend through a major portion of the second dielectric pattern in a direction away from the bottom surface of the recess region. | 09-16-2010 |
| 20110256708 | Methods of Manufacturing Flash Memory Devices by Selective Removal of Nitrogen Atoms - A method of manufacturing a flash memory device includes: forming a dielectric layer on an active region of a substrate having an isolation region and the active region; forming a floating gate on the dielectric layer; forming an isolation layer in the isolation region; forming a nitride layer including a first nitride layer portion formed on an exposed surface of the floating gate and a second nitride layer portion formed on an exposed surface of the isolation layer; selectively removing nitrogen atoms from the second nitride layer portion of the nitride layer; forming an inter-gate dielectric layer on both the first nitride layer portion and the isolation layer; and forming a control gate on the inter-gate dielectric layer. | 10-20-2011 |
| 20110306195 | METHOD OF MANUFACTURING VERTICAL SEMICONDUCTOR DEVICES - In a vertical semiconductor device and a method of manufacturing a vertical semiconductor device, sacrificial layers and insulating interlayers are repeatedly and alternately stacked on a substrate. The sacrificial layers include boron (B) and nitrogen (N) and have an etching selectivity with respect to the insulating interlayers. Semiconductor patterns are formed on the substrate through the sacrificial layers and the insulating interlayers. The sacrificial layers and the insulating interlayers are at least partially removed between the semiconductor patterns to form sacrificial layer patterns and insulating interlayer patterns on sidewalls of the semiconductor patterns. The sacrificial layer patterns are removed to form grooves between the insulating interlayer patterns. The grooves expose portions of the sidewalls of the semiconductor patterns. A gate structure is formed in each of the grooves. | 12-15-2011 |
Bo-Young Lee, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100167490 | Method of Fabricating Flash Memory Device - Provided are methods of fabricating flash memory devices that may prevent a short circuit from occurring between cell gate lines. Methods of fabricating such flash memory devices may include forming gate lines including a series of multiple cell gate lines and multiple selection gate lines. Each gate line may include a stacked structure of a tunnel insulating layer, a floating gate, a gate insulating layer, and/or a polysilicon layer operable to be a control gate, all formed on a semiconductor substrate. Methods may include forming a first insulating layer that selectively fills gaps between the cell gate lines from the bottom up and between adjacent ones of the cell gate lines and the selection gate lines, and does not fill a space located on outer sides of the selection gate lines that are opposite the plurality of cell gate lines. A spacer may be formed on the outer sides of the selection gate lines that are opposite to the cell gate lines, after forming the first insulating layer. A second insulating layer may be formed in a space where the spacer is formed. | 07-01-2010 |
Bo-Young Nam, Anseong-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090191081 | SCROLL COMPRESSOR IMPROVED IN FUNCTION OF OIL CIRCULATION AND BACK PRESSURE CONTROL - Provided is a scroll compressor having an improved function of oil circulation and back pressure control. The scroll compressor includes: a housing; a drive part for generating a rotational force; a drive shaft driven by the drive part; and a scroll compression part including a stationary scroll fixed regardless of rotation of the drive shaft and having a scroll wrap for compressing sucked fluid and a discharge port for supplying coolant into a discharge chamber, and an orbiting scroll orbited depending on rotation of the drive shaft and having a scroll wrap, characterized in that the coolant compressed by the scroll compression part is conveyed to the discharge chamber, the coolant of the discharge chamber is separated into oil and gas in an oil separator, the gas being discharged through a discharge hole and the oil being supplied into a back pressure chamber through a return path formed in the stationary scroll, and the oil is returned into a suction chamber through a back pressure adjustment valve. | 07-30-2009 |
| 20090317276 | SCROLL COMPRESSOR HAVING ROTATION PREVENTION MECHANISM - Provided is a scroll compressor having a rotation prevention mechanism including: a housing for accommodating components; a drive unit for generating a rotational force; a suction part for sucking fluid from the exterior; a scroll compression part including a stationary scroll constituted of a spiral scroll wrap for compressing the fluid sucked from the suction part and fixed regardless of rotation of a drive shaft of the drive unit, and an orbiting scroll orbited depending on rotation of the drive shaft and having a spiral scroll wrap; and a discharge part for discharging the high pressure fluid compressed by the scroll compression part, characterized in that a guide ring is installed between the stationary scroll and the suction-side housing, a plurality of fitting pins are installed to project forward from an outer periphery of the orbiting scroll, and a plurality of fitting grooves, in which the fitting pins are accommodated, are formed at an inner periphery of the guide ring. | 12-24-2009 |
Bo-Young Seo, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080253190 | Non-volatile memory device and method of operating the same - The present invention is directed to a non-volatile memory device and a method of operating the same. The non-volatile memory device includes a first transistor connected to an nth bitline and a second transistor connected to an (n+1)th bitline. The first transistor and the second transistor are serially coupled between the nth bitline and the (n+1)th bitline. The non-volatile memory device may include a 2-transistor 1-bit unit cell where a drain region and a source region of a memory cell have the same or similar structure. Since a cell array of a non-volatile memory device according to the invention may include a 2-transistor 2-bit unit cell, storage capacity of the non-volatile memory device may be doubled. | 10-16-2008 |
| 20100265765 | Non-volatile semiconductor memory device in which program disturb is reduced and method of programming the same - A non-volatile semiconductor memory device capable of reducing program disturb and a method of programming the same are provided. A bit line connected to a non-selected memory cell in the same block as a selected memory cell enters a floating state by inactivating a bit line selection switch, so that voltage levels of an first conductivity type channel and a source/drain terminal formed in a pocket second conductivity type well below a memory transistor have an intermediate level of a voltage level of a selection line and the pocket P type well. Therefore, program disturb caused by FN tunneling and junction hot electrons can be inhibited. | 10-21-2010 |
| 20120007212 | SEMICONDUCTOR DEVICE HAVING A DIODE - Provided is a semiconductor device. The semiconductor device includes a lower active region on a semiconductor substrate. A plurality of upper active regions protruding from a top surface of the lower active region and having a narrower width than the lower active region are provided. A lower isolation region surrounding a sidewall of the lower active region is provided. An upper isolation region formed on the lower isolation region, surrounding sidewalls of the upper active regions, and having a narrower width than the lower isolation region is provided. A first impurity region formed in the lower active region and extending into the upper active regions is provided. Second impurity regions formed in the upper active regions and constituting a diode together with the first impurity region are provided. A method of fabricating the same is provided as well. | 01-12-2012 |
| 20120018797 | NONVOLATILE MEMORY DEVICE, AND METHODS OF MANUFACTURING AND DRIVING THE SAME - A nonvolatile memory device includes a device isolation film defining an active region in a semiconductor substrate, a pocket well region formed in an upper portion of the active region and having a first conductivity type, a gate electrode formed on the active region and extending to intersect the active region, a tunnel insulating film, a charge storage film, and a blocking insulating film sequentially disposed between the active region and the gate electrode, a source region and a drain region respectively formed in a first region and a second region of the active region exposed on both sides of the gate electrode, and each having a second conductivity type opposite to the first conductivity type, a pocket well junction region formed in the first region adjacent to the source region and contacting the pocket well region, and having the first conductivity type, and a metal silicide layer formed in the first region and contacting the source region and the pocket well junction region. | 01-26-2012 |
Bo-Young Yoo, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20100261276 | Method For The Preparation Of Dermal Papilla Tissue Employing Mesenchymal Stem Cells - A method for the preparation of dermal papilla tissue comprising the step of culturing mesenchymal stem cells in a medium having a specific composition is provided. The method makes it possible to form in vitro a quantity of dermal papilla tissues having hair follicle inducting ability and, accordingly, it can be effectively used for the treatment of alopecia through cell transplantation. | 10-14-2010 |