| Patent application number | Description | Published |
|---|
| 20080310227 | SEMICONDUCTOR MEMORY DEVICE AND RELATED PROGRAMMING METHOD - A NOR flash memory device and related programming method are disclosed. The programming method includes programming data in a memory cell and, during a program verification operation, controlling the supply of current from a sense amplifier to the memory cell in relation to the value of the programmed data. Wherein a program verification operation is indicated, current is provided from the sense amplifier to the memory cell. Where a program verification operation is not indicated, current is cut off from the sense amplifier. | 12-18-2008 |
| 20090085680 | OSCILLATOR GENERATING NORMAL CLOCK SIGNAL - Disclosed is an oscillator including a reference voltage generator generating a reference voltage, and a logic combination circuit generating complementary first and second internal clock signals in response to the reference voltage and complementary first and second output voltages. One of the first and second output voltages—the one going high—is provided to the logic combination circuit before the other one of the first and second output voltages—the one going low. | 04-02-2009 |
| 20090273983 | NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD - Disclosed is a programming method for a nonvolatile memory device. The method includes; charging word-line signal lines to a pass voltage during a pass voltage charge operation, simultaneously executing an initial precharge operation for strings including program-inhibited cells during the pass voltage charge operation, and applying the pass voltage to word lines from the word-line signal lines in response to a block-selection enabling signal | 11-05-2009 |
| 20100001710 | REFERENCE VOLTAGE GENERATING CIRCUIT - A reference voltage generating circuit provides a stabilized reference voltage and includes; a clock generator providing a clock signal, a high voltage generator providing a pumping voltage in response to the clock signal, a ripple eradicator providing a static voltage by removing voltage ripple from the pumping voltage, and a reference voltage generator providing the reference voltage. | 01-07-2010 |
| 20110058427 | FLASH MEMORY DEVICE CONFIGURED TO REDUCE COMMON SOURCE LINE NOISE, METHODS OF OPERATING SAME, AND MEMORY SYSTEM INCORPORATING SAME - A flash memory device comprises memory cells connected between a bit line and a common source line, word lines connected to the memory cells, a common source line feedback circuit connected to a common source line (CSL) to detect the voltage level of the common source line, and a CSL feedback control logic configured to control a voltage level of a selected word line or a selected bit line to be compensated to a substantially constant value during a sensing operation of the memory cells based on the detected voltage level of the CSL. | 03-10-2011 |
| 20110080791 | NONVOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION - A method of programming a nonvolatile memory device comprises programming memory cells by performing a plurality of program loops with bitline precharging inactivated during program verification operations of some of the program loops, and with bitline precharging activated during program verification operations of some of the program loops. | 04-07-2011 |
