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Blomme
Adri Marinus Blomme, Wapenveld NL
| Patent application number | Description | Published |
|---|---|---|
| 20100121428 | VASCULAR PROSTHESIS - A vascular prosthesis comprising a hollow, tubular body ( | 05-13-2010 |
David J. Blomme, Madison, WI US
| Patent application number | Description | Published |
|---|---|---|
| 20080252038 | BICYCLE FRAME WITH DEVICE CAVITY - A bicycle frame having a cavity constructed to receive a sensor device. The cavity has a shape and a contour that generally matches a shape and a contour of the sensor device. Such a configuration maintains the aerodynamic contour of the frame when the sensor device is positioned in the cavity. An optional plug occupies the cavity when the sensor device is not positioned therein. Preferably, the sensor device is constructed to wirelessly communicate bicycle operation information to a receiver that is remotely located relative to the sensor device. More preferably, the cavity is formed in a fork of the bicycle and the sensor device is configured to monitor operation of a front wheel and wirelessly communicate the operation information to the remote receiver. | 10-16-2008 |
Karel Blomme, Evergem BE
| Patent application number | Description | Published |
|---|---|---|
| 20080302824 | Metering Valve Comprising a Fixed Inner Conduit and a Mobile Outer Sleeve - The invention concerns a valve ( | 12-11-2008 |
Pieter Blomme, Heverlee BE
| Patent application number | Description | Published |
|---|---|---|
| 20110039380 | Method for Forming a Floating Gate Non-Volatile Memory Cell - Method for manufacturing a non-volatile memory comprising at least one array of memory cells on a substrate of a semiconductor material, the memory cells being self-aligned to and separated from each other by STI structures, the memory cells comprising a floating gate having an inverted-T shape in a cross section along the array of memory cells, wherein the inverted T shape is formed by oxidizing an upper part of the sidewalls of the floating gates thereby forming sacrificial oxide, and subsequently removing the sacrificial oxide simultaneously with further etching back the STI structures. | 02-17-2011 |
Pieter Blomme, Oostende BE
| Patent application number | Description | Published |
|---|---|---|
| 20120112262 | Method for producing a floating gate memory structure - Disclosed are methods for manufacturing floating gate memory devices and the floating gate memory devices thus manufactured. In one embodiment, the method comprises providing a monocrystalline semiconductor substrate, forming a tunnel oxide layer on the substrate, and depositing a protective layer on the tunnel oxide layer to form a stack of the tunnel oxide layer and the protective layer. The method further includes forming at least one opening in the stack, thereby exposing at least one portion of the substrate, and cleaning the at least one exposed portion with a cleaning liquid. The method still further includes loading the substrate comprising the stack into a reactor and, thereafter, performing an in-situ etch to remove the protective layer, using the at least one exposed portion as a source to epitaxially grow a layer comprising the monocrystalline semiconductor material, and forming the layer into at least one columnar floating gate structure. | 05-10-2012 |