Patent application number | Description | Published |
20110279824 | ELECTRICALLY TUNABLE FABRY-PEROT INTERFEROMETER, AN INTERMEDIATE PRODUCT AN ELECTRODE ARRANGEMENT AND A METHOD FOR PRODUCING AN ELECTRICALLY TUNABLE FABRY-PEROT INTERFEROMETER - Electrically tunable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing interferometers with prior art processes includes costly and complicated production phases. Therefore, it has not been possible to apply interferometers in consumer mass products. According to the present solution, the Fabry-Perot cavity is made by removing a sacrificial layer ( | 11-17-2011 |
20120181647 | MICROMECHANICAL TUNABLE FABRY-PEROT INTERFEROMETER AND A METHOD FOR PRODUCING THE SAME - The invention relates to controllable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Micromechanical interferometers of the prior art have a disadvantage of significantly attenuating infrared radiation. In the inventive solution there is a gap in at least one mirror, serving as a layer of the mirror. The other layers of the mirrors can be made of polycrystalline silicon, which has a negligible attenuation at the infrared range. It is also preferable to provide a hole or a recess in a substrate at the optical area of the interferometer. | 07-19-2012 |
20150241612 | Optical layered structure, manufacturing method, and use - The present publication describes a heat-resistant optical layered structure, a manufacturing method for a layered structure, and the use of a layered structure as a detector, emitter, and reflecting surface. The layered structure comprises a reflecting layer, an optical structure on top of the reflecting layer, and preferably shielding layers for shielding the reflecting layer and the optical structure. According to the invention, the optical structure on top of the reflecting layer comprises at least one partially transparent layer, which is optically fitted at a distance to the reflecting layer. | 08-27-2015 |
Patent application number | Description | Published |
20120164329 | Combination CVD/ALD method and source - The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. | 06-28-2012 |
20130309417 | METHODS FOR FORMING MULTI-COMPONENT THIN FILMS - The present application relates generally to atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A-B-O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed. | 11-21-2013 |
20150021537 | METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE - The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition. The method additionally includes forming a metallic layer comprising the pnictogen element by atomic layer deposition (ALD). The resistive switching material is interposed between the first electrode and the metallic layer. | 01-22-2015 |
20150021540 | METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE - The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material. | 01-22-2015 |
20150179440 | SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS - Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film. | 06-25-2015 |
Patent application number | Description | Published |
20120269962 | PROCESS FOR PASSIVATING DIELECTRIC FILMS - Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer. | 10-25-2012 |
20130095664 | ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS - Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl | 04-18-2013 |
20130108877 | CRYSTALLINE STRONTIUM TITANATE AND METHODS OF FORMING THE SAME | 05-02-2013 |
20140193579 | Combination CVD/ALD method and source - The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. | 07-10-2014 |
20140273452 | DEPOSITION OF SMOOTH METAL NITRIDE FILMS - In one aspect, methods of forming smooth ternary metal nitride films, such as Ti | 09-18-2014 |
20140273510 | SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS - Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film. | 09-18-2014 |
20150099066 | Combination CVD/ALD method, source and pulse profile modification - The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor feed is controlled in order to provide an optimal pulse profile. This may be accomplished by splitting the feed into two paths. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes. Additionally, the pulse profile of each pulse can be modified. The pulse profile can be modified to create a low or very low partial pressure pulse profile at the beginning of a pulse. | 04-09-2015 |
20150249005 | ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS - Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl | 09-03-2015 |
20150303101 | FLUORINE-CONTAINING CONDUCTIVE FILMS - An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. | 10-22-2015 |
Patent application number | Description | Published |
20120270393 | METAL SILICIDE, METAL GERMANIDE, METHODS FOR MAKING THE SAME - In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. | 10-25-2012 |
20130115768 | METHODS FOR DEPOSITING NICKEL FILMS AND FOR MAKING NICKEL SILICIDE AND NICKEL GERMANIDE - In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes. | 05-09-2013 |
Patent application number | Description | Published |
20080200966 | Simulator For Use With a Breathing-Assist Device - Function testing of a ventilator using an EMG or other bioelectric signal representative of the breathing of the patient to control ventilation is enabled by a simulating device for use with a breathing related device for monitoring and/or controlling a patient's breathing, the simulating device including a signal generator for providing a simulated bioelectric compound signal related to the patient's breathing function, and a contact for outputting the simulated bioelectric compound signal. The simulating device can also be used for training purposes and in the development of new ventilators. | 08-21-2008 |
20080308104 | Ventilator - A ventilator intended to be connected to a patient for breathing therapy has a control unit having an input for receiving EMG signals from an EMG detector and an output for an EMG based control signal and a pneumatic unit for generating breathing gas flows dependent on the EMG based control signal is described. The ventilator has a detector for determining a parameter related to breathing dynamics for the patient, this detector being connected to the control unit and control unit controlling the pneumatic unit dependent on the parameter related to breathing dynamics in the case of loss of EMG signals at the input. | 12-18-2008 |
20110000488 | REGULATION OF DELIVERY OF MULTIPLE ANESTHETIC AGENTS TO A PATIENT FROM AN ANESTHETIC BREATHING APPARATUS - In a method and system of regulating multiple anesthetic agents in a breathing circuit of an anesthetic breathing apparatus is disclosed, a primary anesthetic agent added to the breathing circuit is regulated to a set desired value of the amount of the primary anesthetic agent, and a secondary anesthetic agent in the breathing circuit is regulated to an amount of said secondary anesthetic agent that it is equal to or less than a defined threshold level, e.g. of the concentration, of the secondary anesthetic agent. | 01-06-2011 |
20130255686 | VENTILATOR OPERABLE IN A BIOELECTRIC SIGNAL-DEPENDENT MODE, WITH AUTOMATIC SWITCHING TO ANOTHER MODE UPON DROPOUT OF THE BIOELECTRIC SIGNAL - A ventilator intended to be connected to a patient for breathing therapy has a control unit having an input for receiving EMG signals from an EMG detector and an output for an EMG based control signal and a pneumatic unit for generating breathing gas flows dependent on the EMG based control signal is described. The ventilator has a detector for determining a parameter related to breathing dynamics for the patient, this detector being connected to the control unit and control unit controlling the pneumatic unit dependent on the parameter related to breathing dynamics in the case of loss of EMG signals at the input. | 10-03-2013 |